JPS6322613B2 - - Google Patents
Info
- Publication number
- JPS6322613B2 JPS6322613B2 JP57152052A JP15205282A JPS6322613B2 JP S6322613 B2 JPS6322613 B2 JP S6322613B2 JP 57152052 A JP57152052 A JP 57152052A JP 15205282 A JP15205282 A JP 15205282A JP S6322613 B2 JPS6322613 B2 JP S6322613B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide film
- semiconductor
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152052A JPS5941851A (ja) | 1982-09-01 | 1982-09-01 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152052A JPS5941851A (ja) | 1982-09-01 | 1982-09-01 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5941851A JPS5941851A (ja) | 1984-03-08 |
| JPS6322613B2 true JPS6322613B2 (enrdf_load_stackoverflow) | 1988-05-12 |
Family
ID=15531992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57152052A Granted JPS5941851A (ja) | 1982-09-01 | 1982-09-01 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941851A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994407A (en) * | 1988-09-20 | 1991-02-19 | Rockwell International Corporation | Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming |
| US6610581B1 (en) | 1999-06-01 | 2003-08-26 | Sanyo Electric Co., Ltd. | Method of forming isolation film in semiconductor device |
-
1982
- 1982-09-01 JP JP57152052A patent/JPS5941851A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5941851A (ja) | 1984-03-08 |
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