JPS6322065B2 - - Google Patents

Info

Publication number
JPS6322065B2
JPS6322065B2 JP55067362A JP6736280A JPS6322065B2 JP S6322065 B2 JPS6322065 B2 JP S6322065B2 JP 55067362 A JP55067362 A JP 55067362A JP 6736280 A JP6736280 A JP 6736280A JP S6322065 B2 JPS6322065 B2 JP S6322065B2
Authority
JP
Japan
Prior art keywords
film
layer
sio
semiconductor substrate
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55067362A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56164550A (en
Inventor
Junosuke Kawabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6736280A priority Critical patent/JPS56164550A/ja
Publication of JPS56164550A publication Critical patent/JPS56164550A/ja
Publication of JPS6322065B2 publication Critical patent/JPS6322065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP6736280A 1980-05-21 1980-05-21 Manufacture of semiconductor device Granted JPS56164550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6736280A JPS56164550A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6736280A JPS56164550A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56164550A JPS56164550A (en) 1981-12-17
JPS6322065B2 true JPS6322065B2 (cg-RX-API-DMAC10.html) 1988-05-10

Family

ID=13342821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6736280A Granted JPS56164550A (en) 1980-05-21 1980-05-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164550A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270846A (ja) * 1985-05-24 1986-12-01 Matsushita Electronics Corp 半導体装置
JP2685448B2 (ja) * 1987-07-10 1997-12-03 株式会社日立製作所 半導体装置の製造方法
JPH04127433A (ja) * 1990-09-18 1992-04-28 Sharp Corp 半導体素子分離領域の形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849027B2 (ja) * 1979-06-11 1983-11-01 日本電信電話株式会社 半導体集積回路装置の製法

Also Published As

Publication number Publication date
JPS56164550A (en) 1981-12-17

Similar Documents

Publication Publication Date Title
JPS6340337A (ja) 集積回路分離法
JPH0586673B2 (cg-RX-API-DMAC10.html)
JP2802600B2 (ja) 半導体装置の製造方法
JPH02222161A (ja) 半導体装置の製造方法
JP3039978B2 (ja) 集積ｍｉｓｆｅｔデバイス中に電界分離構造及びゲート構造を形成する方法
JPS6322065B2 (cg-RX-API-DMAC10.html)
JPS59108325A (ja) 半導体装置の製造方法
JPS60241261A (ja) 半導体装置およびその製造方法
JPS63188952A (ja) 半導体装置の製造方法
JPH10308448A (ja) 半導体デバイスの隔離膜及びその形成方法
JPH023257A (ja) フィールドシールド構造を有する半導体装置およびその製造方法
JPS60136327A (ja) 半導体装置の製造方法
JPH0258778B2 (cg-RX-API-DMAC10.html)
JPS5850752A (ja) 半導体装置の製造方法
JP2554635B2 (ja) 半導体装置の製造方法
JPS63257244A (ja) 半導体装置およびその製造方法
JPS6037614B2 (ja) 半導体装置の製造方法
JPH11354650A (ja) 半導体装置およびその製造方法
JPS58200553A (ja) 半導体装置
JP3000130B2 (ja) 半導体装置の製造方法
JPS58175843A (ja) 半導体集積回路の製造方法
JPH0370385B2 (cg-RX-API-DMAC10.html)
JPS63170922A (ja) 配線方法
JPS60251641A (ja) 半導体装置およびその製造方法
JPS60251640A (ja) 半導体装置およびその製造方法