JPS63215598A - 低温相硼酸バリウム単結晶の育成方法 - Google Patents

低温相硼酸バリウム単結晶の育成方法

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Publication number
JPS63215598A
JPS63215598A JP4567487A JP4567487A JPS63215598A JP S63215598 A JPS63215598 A JP S63215598A JP 4567487 A JP4567487 A JP 4567487A JP 4567487 A JP4567487 A JP 4567487A JP S63215598 A JPS63215598 A JP S63215598A
Authority
JP
Japan
Prior art keywords
crystal
flux
single crystal
temperature phase
barium borate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4567487A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0469599B2 (zh
Inventor
Norio Onishi
大西 紀男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4567487A priority Critical patent/JPS63215598A/ja
Publication of JPS63215598A publication Critical patent/JPS63215598A/ja
Publication of JPH0469599B2 publication Critical patent/JPH0469599B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4567487A 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法 Granted JPS63215598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS63215598A true JPS63215598A (ja) 1988-09-08
JPH0469599B2 JPH0469599B2 (zh) 1992-11-06

Family

ID=12725936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4567487A Granted JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS63215598A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02279583A (ja) * 1989-04-19 1990-11-15 Nec Corp 単結晶育成方法
JPH03109297A (ja) * 1989-09-22 1991-05-09 Sumitomo Metal Mining Co Ltd ベータ型メタホウ酸バリウム単結晶の製造方法
EP0573738A3 (en) * 1992-02-19 1996-03-27 Crystal Tech Inc Method for crystal growth of beta barium borate
CN102383182A (zh) * 2011-10-23 2012-03-21 福建福晶科技股份有限公司 一种减少bbo晶体中心包络的熔盐生长法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02279583A (ja) * 1989-04-19 1990-11-15 Nec Corp 単結晶育成方法
JPH03109297A (ja) * 1989-09-22 1991-05-09 Sumitomo Metal Mining Co Ltd ベータ型メタホウ酸バリウム単結晶の製造方法
EP0573738A3 (en) * 1992-02-19 1996-03-27 Crystal Tech Inc Method for crystal growth of beta barium borate
CN102383182A (zh) * 2011-10-23 2012-03-21 福建福晶科技股份有限公司 一种减少bbo晶体中心包络的熔盐生长法

Also Published As

Publication number Publication date
JPH0469599B2 (zh) 1992-11-06

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