JPS63215598A - Production of barium borate single crystal having low temperature phase - Google Patents

Production of barium borate single crystal having low temperature phase

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Publication number
JPS63215598A
JPS63215598A JP4567487A JP4567487A JPS63215598A JP S63215598 A JPS63215598 A JP S63215598A JP 4567487 A JP4567487 A JP 4567487A JP 4567487 A JP4567487 A JP 4567487A JP S63215598 A JPS63215598 A JP S63215598A
Authority
JP
Japan
Prior art keywords
crystal
flux
single crystal
temperature phase
barium borate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4567487A
Other languages
Japanese (ja)
Other versions
JPH0469599B2 (en
Inventor
Norio Onishi
大西 紀男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4567487A priority Critical patent/JPS63215598A/en
Publication of JPS63215598A publication Critical patent/JPS63215598A/en
Publication of JPH0469599B2 publication Critical patent/JPH0469599B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To readily obtain a barium borate single crystal consisting of pure low temperature phase structure, by blending BaCl2 and NaBO2 with NaCl which is a flux at a specific molar ratio and heating and melting the blend to carry out reaction and depositing the resultant BaB2O4 as a crystal in the flux. CONSTITUTION:1-13.5mol. sodium chloride as a flux is blended with a raw material consisting of 1mol. barium chloride and 2mol. sodium metaborate. Then the blend is heated and melted to carry out reaction and barium borate which is reaction product is deposited as a crystal in the flux. Thus a single crystal of beta-BaB2O4, consisting of prism- or needle-like transparent crystal, containing no high temperature phase and wholly consisting of pure low temperature phase structure is obtained. The single crystal has large nonlinear optical effect and is strong to injure by laser and useful as nonlinear optical material.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は、有望な非線形光学結晶として最近発見された
低温相構造の硼酸バリウム(β−BaB20、)Jl結
晶の育成に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to the growth of barium borate (β-BaB20,) Jl crystal, which has recently been discovered as a promising nonlinear optical crystal and has a low-temperature phase structure.

[従来の技術] 将来の多様な光波術を支える光学材料の一つとして、大
きな非線形光学効果を持ち、かつレーザ損傷に強い非線
形光学材料が待望されている。
[Prior Art] A nonlinear optical material that has a large nonlinear optical effect and is resistant to laser damage is long-awaited as one of the optical materials that will support a variety of light wave techniques in the future.

そうした中にあって、β−BaB204結晶は大きな非
線形光学定数を持つことが結晶詳論的探索により予見さ
れ、現実にその効果が証明されるに及んで[C,Chu
angtian et al、: 5cientia 
5inica(Seties B)、 Vol、28.
 No、3.235 (1,985)コ、にわか1に実
用サイズのβ−BaB20mの良質な単結晶の育成に関
心が集まってきた6 BaBzO1結晶は925℃近傍を境として、それより
上の温度では結晶構造R3cmpgaを、その下ではR
3−C・を採る、いわゆる構造相転移性を持つ結晶であ
る。第1図に示すように、相図的にはBaOとB2Oり
がモル比1:ユでフングルーエンドに融解して化合物B
aB20Aを生成する(第1図、組成C点)、シかしこ
の組成融液から、例えば引き上げ法(CZ法)などを用
いて直接に単結晶を育成しようとしても、相転移の起こ
り方が不完全なために、結晶温度が転移点を降下しても
高温相構造がクエンチされてそのまま低温相温度まで持
ち込まれ、室温では、高温相(α相)と低温相(β)相
が混在した構造となる。
Under such circumstances, it was predicted through crystal detailed research that β-BaB204 crystal would have a large nonlinear optical constant, and its effect was actually proven [C, Chu
Angtian et al.: 5cientia
5inica (Seties B), Vol, 28.
No. 3.235 (1,985) There has been a sudden interest in growing high-quality single crystals of β-BaB20m of practical size.6 BaBzO1 crystals can be grown at temperatures around 925℃ and above Here we have the crystal structure R3cmpga, and below that we have the crystal structure R3cmpga.
It is a crystal with so-called structural phase transition property, which adopts 3-C. As shown in Figure 1, in the phase diagram, BaO and B2O melt at a molar ratio of 1:1 to form a compound B.
Even if one tries to directly grow a single crystal from this composition melt using a pulling method (CZ method), etc., the phase transition will not occur properly. Because of the completeness, even if the crystal temperature falls below the transition point, the high temperature phase structure is quenched and brought directly to the low temperature phase temperature, and at room temperature, the structure is a mixture of high temperature phase (α phase) and low temperature phase (β) phase. becomes.

非線形光学効果は反転対称性を欠く低温相構造のβ−B
aB20aだけに見られる。従って目的とする結晶はβ
相だけの単−相からなる単結晶で、それを育成するため
には何らかの工夫が要求される。
The nonlinear optical effect is due to the low-temperature phase structure β-B lacking inversion symmetry.
Found only in aB20a. Therefore, the desired crystal is β
It is a single crystal consisting of only a single phase, and some kind of ingenuity is required to grow it.

β−BaB20j単結晶の育成例としては、第2図の相
図に示すBaB201とNazB20aの共晶反応の一
部を利用した方法が、唯一公知である。
As an example of growing a β-BaB20j single crystal, the only known method is one that utilizes a part of the eutectic reaction between BaB201 and NazB20a shown in the phase diagram of FIG.

[H,Qingzhen at al、 :Acta 
Pbys、 5inica Vol、30゜No、4.
 pp、559 (1981)、参照コこの方法の要点
は、転移温度以下のβ相領域で結晶を育成する点で、原
料組成MaとMbの範囲で(第2図)、しかも転移温度
Tcと共晶温度Teの間において トップシーディング
CZ法を用いてβ−BaB201を直接引き上げるもの
である。
[H, Qingzhen at al, :Acta
Pbys, 5inica Vol, 30°No, 4.
pp. 559 (1981), see here. The key point of this method is to grow crystals in the β phase region below the transition temperature, within the range of raw material compositions Ma and Mb (Fig. 2), and at the same time as the transition temperature Tc. β-BaB201 is directly pulled up using the top seeding CZ method between crystal temperatures Te.

仮に組成Maの原料を例にとって具体的な操作手順を説
明する。まずルツボに原料を入れ完全に融液状態にして
反応させ、その後ゆっくり降温する。
The specific operating procedure will be explained by taking as an example a raw material having a composition Ma. First, raw materials are placed in a crucible, completely melted, and reacted, and then the temperature is slowly lowered.

融液から結晶が析出し始める温度Tcで融液に種結晶を
浸し、温度を下げ続けながら引き上げる。結晶が育成す
るにつれて残りの融液組成はMaからMbに向かって変
化し、共晶点手前において結晶を融液から引き離し、そ
のあと室温まで冷却する。
A seed crystal is immersed in the melt at a temperature Tc at which crystals begin to precipitate from the melt, and pulled up while continuing to lower the temperature. As the crystal grows, the remaining melt composition changes from Ma to Mb, and the crystal is separated from the melt just before the eutectic point, and then cooled to room temperature.

[発明が解決しようとする問題点コ 上に述べた公知の方法は最大TaからTbまでの100
℃足らずの温度範囲しか利用できず、ルツボに仕込んだ
原料の内、結晶として析出する量は少なく、そのため大
きなルツボと多量の原料を必要とし、また融液の冷却速
度と結晶の引き上げ速度の関係など技術的な難しさもあ
り、引き上げ装置も必要である。
[Problems to be solved by the invention] The above-mentioned known method has a maximum of 100
Only a temperature range of less than 30 degrees Fahrenheit can be used, and only a small amount of the raw material charged into the crucible precipitates as crystals. Therefore, a large crucible and a large amount of raw material are required, and the relationship between the cooling rate of the melt and the rate of pulling the crystals is limited. There are also technical difficulties such as this, and a lifting device is also required.

この発明はβ−BaB20jJ@結晶を手軽に育成する
別の新しい方法を提案するもので、公知例と異なる原料
の組み合わせから出発し、より簡単な装置と育成技術で
、実用サイズの単結晶が得られる利点を持つものである
This invention proposes another new method for easily growing β-BaB20jJ@ crystals. Starting from a combination of raw materials different from known examples, single crystals of practical size can be obtained using simpler equipment and growing techniques. It has the advantage of being

[問題を解決するための二段コ この発明のにおいては塩化バリウム(BaC12)とメ
タ硼酸ナトリウム(NaBO2)を出発原料とし、これ
と−緒に、塩化ナトリウム(NaC1)をフラックスと
して加えて、 加熱、溶融して次式に示す化学反応を行
わせる。
[Two steps to solve the problem] In this invention, barium chloride (BaC12) and sodium metaborate (NaBO2) are used as starting materials, along with which sodium chloride (NaC1) is added as a flux and heated. , is melted and the chemical reaction shown in the following formula is carried out.

BaCl2+2NaBO2+nNaC1→BaB20a
+ (n+2)NaC1 この際、融液をゆっくり降温して反応酸生物たる硼酸バ
リウムをフラックス中に単結晶として析出させる。
BaCl2+2NaBO2+nNaCl→BaB20a
+ (n+2)NaCl At this time, the temperature of the melt is slowly lowered to precipitate barium borate, which is a reactive acid, as a single crystal in the flux.

[作用] この発明の要点をなす上記反゛応においては、NaC1
は直接反応に加わらず、ただフラックスとしての役割り
を務め、反応速度を抑え、かつ反応により生成されるβ
−BaB204の濃度を希釈して核発生の多発を防ぎ、
結晶サイズの大型化を促進する働きをする。それと同時
にNaC1は、析出する結晶を保持し、結晶が白金ルツ
ボ壁へ付着して。
[Operation] In the above reaction which forms the main point of this invention, NaC1
does not directly participate in the reaction, but only serves as a flux, suppressing the reaction rate, and reducing the amount of β produced by the reaction.
- Dilute the concentration of BaB204 to prevent frequent nuclear generation,
It works to promote enlargement of crystal size. At the same time, NaCl holds the precipitated crystals and the crystals adhere to the platinum crucible wall.

白金との熱膨張の違いに原因してひび割れるのを防ぎ、
加えて、固化する際の体積収縮により、ルツボと内部が
分離してその取り出しを極めて容易にする。
Prevents cracking due to the difference in thermal expansion with platinum,
In addition, volumetric contraction during solidification separates the crucible from the inside, making it extremely easy to take out.

[実施例コ 次にこの発明の詳細な説明する。[Example code] Next, this invention will be explained in detail.

出発原料のNaBO2、BaCl2およびフラックスの
NaC1は、真空乾燥して、それぞれ23.0wt%、
34.5wt%、42.5wt%秤量し。
The starting materials NaBO2, BaCl2 and the flux NaCl were vacuum dried to a concentration of 23.0 wt%, respectively.
Weighed 34.5wt% and 42.5wt%.

全体でほぼ50grを50ccの蓋付き白金ルツボに入
れ、900℃に5時間保って完全に融解した後、700
℃迄は10”C/hrで、それ以下400℃迄は20’
C/hrで冷却し、以下室温まで炉冷する。そのあとル
ツボ内の固化物を取り出し、流水でNaC1を溶かし去
り、その中に析出した口約のβ−BaBg○4単結晶を
収拾する。
Approximately 50 gr in total was placed in a 50 cc platinum crucible with a lid, kept at 900 °C for 5 hours to completely melt, and then heated to 700 °C.
10"C/hr up to ℃, 20" below that up to 400℃
C/hr, and then furnace-cooled to room temperature. After that, the solidified material in the crucible is taken out, the NaCl is dissolved away with running water, and the β-BaBg○4 single crystal of about 100 ml is precipitated therein.

[発明の効果] この発明は以上説明したように、塩化バリウムとメタ硼
酸ナトリウムを原料とする硼酸バリウムの生成反応にお
いて、1〜13.5モルの塩化ナトリウムをフラックス
として原料に混合して溶融し、生成反応物たる硼酸バリ
ウムをフラックス中に単結晶として祈出させることによ
り、きれいな晶癖を持つサイズlimφXl0mmまで
の柱状ないし針状の透明な結晶が育成でき、XIt&デ
ィフラクトメーターで測定した結果、結晶は高温相を全
く含まず、全体が純粋な低温相構造からなるβ−BaB
20Aの単結晶であることが証明された。
[Effects of the Invention] As explained above, this invention is a method for producing barium borate using barium chloride and sodium metaborate as raw materials, by mixing 1 to 13.5 moles of sodium chloride with the raw materials as a flux and melting the mixture. By allowing barium borate, which is a reaction product, to form a single crystal in a flux, columnar or acicular transparent crystals with a clean crystal habit and a size of up to limφXl0mm can be grown, and as a result of measurement with an XIt & diffractometer, The crystal does not contain any high-temperature phase and consists entirely of a pure low-temperature phase structure.
It was proven to be a 20A single crystal.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はBaO−8203系の相図、第2図はBaB2
O4−Na2B20を系の相図テアル。 図中、Cはモル比1: 1のコングルーエンド組1−゛ 指定代理人 電子技術総合研究所長 佐M蕪平ij゛ L−−:、’−−−−+ 第1図 −8203モルi。 C:モル沈1:10点
Figure 1 is the phase diagram of BaO-8203 system, Figure 2 is BaB2
Phase diagram of the O4-Na2B20 system. In the figure, C is a group of congruends with a molar ratio of 1:1. . C: Molar precipitation 1:10 points

Claims (1)

【特許請求の範囲】[Claims] 塩化バリウムとメタ硼酸ナトリウムを原料とする硼酸バ
リウムの生成反応に於て、塩化バリウム1モル、メタ硼
酸ナトリウム2モルの原料に対して1〜13.5モルの
塩化ナトリウムをフラックスとして混合し、これらを加
熱・溶融して反応を行わしめ、反応生成物たる硼酸バリ
ウムをフラックス中に結晶として析出させることを特徴
とする低温相硼酸バリウム単結晶の育成方法。
In the production reaction of barium borate using barium chloride and sodium metaborate as raw materials, 1 to 13.5 moles of sodium chloride are mixed as a flux to 1 mole of barium chloride and 2 moles of sodium metaborate as raw materials. A method for growing a low-temperature phase barium borate single crystal, which is characterized by heating and melting to cause a reaction, and precipitating the reaction product barium borate as crystals in a flux.
JP4567487A 1987-02-27 1987-02-27 Production of barium borate single crystal having low temperature phase Granted JPS63215598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (en) 1987-02-27 1987-02-27 Production of barium borate single crystal having low temperature phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (en) 1987-02-27 1987-02-27 Production of barium borate single crystal having low temperature phase

Publications (2)

Publication Number Publication Date
JPS63215598A true JPS63215598A (en) 1988-09-08
JPH0469599B2 JPH0469599B2 (en) 1992-11-06

Family

ID=12725936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4567487A Granted JPS63215598A (en) 1987-02-27 1987-02-27 Production of barium borate single crystal having low temperature phase

Country Status (1)

Country Link
JP (1) JPS63215598A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02279583A (en) * 1989-04-19 1990-11-15 Nec Corp Method for growing single crystal
JPH03109297A (en) * 1989-09-22 1991-05-09 Sumitomo Metal Mining Co Ltd Production of beta-barium metaborate single crystal
EP0573738A3 (en) * 1992-02-19 1996-03-27 Crystal Tech Inc Method for crystal growth of beta barium borate
CN102383182A (en) * 2011-10-23 2012-03-21 福建福晶科技股份有限公司 Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02279583A (en) * 1989-04-19 1990-11-15 Nec Corp Method for growing single crystal
JPH03109297A (en) * 1989-09-22 1991-05-09 Sumitomo Metal Mining Co Ltd Production of beta-barium metaborate single crystal
EP0573738A3 (en) * 1992-02-19 1996-03-27 Crystal Tech Inc Method for crystal growth of beta barium borate
CN102383182A (en) * 2011-10-23 2012-03-21 福建福晶科技股份有限公司 Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals

Also Published As

Publication number Publication date
JPH0469599B2 (en) 1992-11-06

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