JPS63215598A - Production of barium borate single crystal having low temperature phase - Google Patents
Production of barium borate single crystal having low temperature phaseInfo
- Publication number
- JPS63215598A JPS63215598A JP4567487A JP4567487A JPS63215598A JP S63215598 A JPS63215598 A JP S63215598A JP 4567487 A JP4567487 A JP 4567487A JP 4567487 A JP4567487 A JP 4567487A JP S63215598 A JPS63215598 A JP S63215598A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- flux
- single crystal
- temperature phase
- barium borate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 18
- 230000004907 flux Effects 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910001626 barium chloride Inorganic materials 0.000 claims abstract description 9
- 239000011780 sodium chloride Substances 0.000 claims abstract description 9
- NVIFVTYDZMXWGX-UHFFFAOYSA-N sodium metaborate Chemical compound [Na+].[O-]B=O NVIFVTYDZMXWGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 10
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- 229910003252 NaBO2 Inorganic materials 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000010587 phase diagram Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 108091006629 SLC13A2 Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000008986 qingzhen Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、有望な非線形光学結晶として最近発見された
低温相構造の硼酸バリウム(β−BaB20、)Jl結
晶の育成に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to the growth of barium borate (β-BaB20,) Jl crystal, which has recently been discovered as a promising nonlinear optical crystal and has a low-temperature phase structure.
[従来の技術]
将来の多様な光波術を支える光学材料の一つとして、大
きな非線形光学効果を持ち、かつレーザ損傷に強い非線
形光学材料が待望されている。[Prior Art] A nonlinear optical material that has a large nonlinear optical effect and is resistant to laser damage is long-awaited as one of the optical materials that will support a variety of light wave techniques in the future.
そうした中にあって、β−BaB204結晶は大きな非
線形光学定数を持つことが結晶詳論的探索により予見さ
れ、現実にその効果が証明されるに及んで[C,Chu
angtian et al、: 5cientia
5inica(Seties B)、 Vol、28.
No、3.235 (1,985)コ、にわか1に実
用サイズのβ−BaB20mの良質な単結晶の育成に関
心が集まってきた6
BaBzO1結晶は925℃近傍を境として、それより
上の温度では結晶構造R3cmpgaを、その下ではR
3−C・を採る、いわゆる構造相転移性を持つ結晶であ
る。第1図に示すように、相図的にはBaOとB2Oり
がモル比1:ユでフングルーエンドに融解して化合物B
aB20Aを生成する(第1図、組成C点)、シかしこ
の組成融液から、例えば引き上げ法(CZ法)などを用
いて直接に単結晶を育成しようとしても、相転移の起こ
り方が不完全なために、結晶温度が転移点を降下しても
高温相構造がクエンチされてそのまま低温相温度まで持
ち込まれ、室温では、高温相(α相)と低温相(β)相
が混在した構造となる。Under such circumstances, it was predicted through crystal detailed research that β-BaB204 crystal would have a large nonlinear optical constant, and its effect was actually proven [C, Chu
Angtian et al.: 5cientia
5inica (Seties B), Vol, 28.
No. 3.235 (1,985) There has been a sudden interest in growing high-quality single crystals of β-BaB20m of practical size.6 BaBzO1 crystals can be grown at temperatures around 925℃ and above Here we have the crystal structure R3cmpga, and below that we have the crystal structure R3cmpga.
It is a crystal with so-called structural phase transition property, which adopts 3-C. As shown in Figure 1, in the phase diagram, BaO and B2O melt at a molar ratio of 1:1 to form a compound B.
Even if one tries to directly grow a single crystal from this composition melt using a pulling method (CZ method), etc., the phase transition will not occur properly. Because of the completeness, even if the crystal temperature falls below the transition point, the high temperature phase structure is quenched and brought directly to the low temperature phase temperature, and at room temperature, the structure is a mixture of high temperature phase (α phase) and low temperature phase (β) phase. becomes.
非線形光学効果は反転対称性を欠く低温相構造のβ−B
aB20aだけに見られる。従って目的とする結晶はβ
相だけの単−相からなる単結晶で、それを育成するため
には何らかの工夫が要求される。The nonlinear optical effect is due to the low-temperature phase structure β-B lacking inversion symmetry.
Found only in aB20a. Therefore, the desired crystal is β
It is a single crystal consisting of only a single phase, and some kind of ingenuity is required to grow it.
β−BaB20j単結晶の育成例としては、第2図の相
図に示すBaB201とNazB20aの共晶反応の一
部を利用した方法が、唯一公知である。As an example of growing a β-BaB20j single crystal, the only known method is one that utilizes a part of the eutectic reaction between BaB201 and NazB20a shown in the phase diagram of FIG.
[H,Qingzhen at al、 :Acta
Pbys、 5inica Vol、30゜No、4.
pp、559 (1981)、参照コこの方法の要点
は、転移温度以下のβ相領域で結晶を育成する点で、原
料組成MaとMbの範囲で(第2図)、しかも転移温度
Tcと共晶温度Teの間において トップシーディング
CZ法を用いてβ−BaB201を直接引き上げるもの
である。[H, Qingzhen at al, :Acta
Pbys, 5inica Vol, 30°No, 4.
pp. 559 (1981), see here. The key point of this method is to grow crystals in the β phase region below the transition temperature, within the range of raw material compositions Ma and Mb (Fig. 2), and at the same time as the transition temperature Tc. β-BaB201 is directly pulled up using the top seeding CZ method between crystal temperatures Te.
仮に組成Maの原料を例にとって具体的な操作手順を説
明する。まずルツボに原料を入れ完全に融液状態にして
反応させ、その後ゆっくり降温する。The specific operating procedure will be explained by taking as an example a raw material having a composition Ma. First, raw materials are placed in a crucible, completely melted, and reacted, and then the temperature is slowly lowered.
融液から結晶が析出し始める温度Tcで融液に種結晶を
浸し、温度を下げ続けながら引き上げる。結晶が育成す
るにつれて残りの融液組成はMaからMbに向かって変
化し、共晶点手前において結晶を融液から引き離し、そ
のあと室温まで冷却する。A seed crystal is immersed in the melt at a temperature Tc at which crystals begin to precipitate from the melt, and pulled up while continuing to lower the temperature. As the crystal grows, the remaining melt composition changes from Ma to Mb, and the crystal is separated from the melt just before the eutectic point, and then cooled to room temperature.
[発明が解決しようとする問題点コ
上に述べた公知の方法は最大TaからTbまでの100
℃足らずの温度範囲しか利用できず、ルツボに仕込んだ
原料の内、結晶として析出する量は少なく、そのため大
きなルツボと多量の原料を必要とし、また融液の冷却速
度と結晶の引き上げ速度の関係など技術的な難しさもあ
り、引き上げ装置も必要である。[Problems to be solved by the invention] The above-mentioned known method has a maximum of 100
Only a temperature range of less than 30 degrees Fahrenheit can be used, and only a small amount of the raw material charged into the crucible precipitates as crystals. Therefore, a large crucible and a large amount of raw material are required, and the relationship between the cooling rate of the melt and the rate of pulling the crystals is limited. There are also technical difficulties such as this, and a lifting device is also required.
この発明はβ−BaB20jJ@結晶を手軽に育成する
別の新しい方法を提案するもので、公知例と異なる原料
の組み合わせから出発し、より簡単な装置と育成技術で
、実用サイズの単結晶が得られる利点を持つものである
。This invention proposes another new method for easily growing β-BaB20jJ@ crystals. Starting from a combination of raw materials different from known examples, single crystals of practical size can be obtained using simpler equipment and growing techniques. It has the advantage of being
[問題を解決するための二段コ
この発明のにおいては塩化バリウム(BaC12)とメ
タ硼酸ナトリウム(NaBO2)を出発原料とし、これ
と−緒に、塩化ナトリウム(NaC1)をフラックスと
して加えて、 加熱、溶融して次式に示す化学反応を行
わせる。[Two steps to solve the problem] In this invention, barium chloride (BaC12) and sodium metaborate (NaBO2) are used as starting materials, along with which sodium chloride (NaC1) is added as a flux and heated. , is melted and the chemical reaction shown in the following formula is carried out.
BaCl2+2NaBO2+nNaC1→BaB20a
+ (n+2)NaC1
この際、融液をゆっくり降温して反応酸生物たる硼酸バ
リウムをフラックス中に単結晶として析出させる。BaCl2+2NaBO2+nNaCl→BaB20a
+ (n+2)NaCl At this time, the temperature of the melt is slowly lowered to precipitate barium borate, which is a reactive acid, as a single crystal in the flux.
[作用]
この発明の要点をなす上記反゛応においては、NaC1
は直接反応に加わらず、ただフラックスとしての役割り
を務め、反応速度を抑え、かつ反応により生成されるβ
−BaB204の濃度を希釈して核発生の多発を防ぎ、
結晶サイズの大型化を促進する働きをする。それと同時
にNaC1は、析出する結晶を保持し、結晶が白金ルツ
ボ壁へ付着して。[Operation] In the above reaction which forms the main point of this invention, NaC1
does not directly participate in the reaction, but only serves as a flux, suppressing the reaction rate, and reducing the amount of β produced by the reaction.
- Dilute the concentration of BaB204 to prevent frequent nuclear generation,
It works to promote enlargement of crystal size. At the same time, NaCl holds the precipitated crystals and the crystals adhere to the platinum crucible wall.
白金との熱膨張の違いに原因してひび割れるのを防ぎ、
加えて、固化する際の体積収縮により、ルツボと内部が
分離してその取り出しを極めて容易にする。Prevents cracking due to the difference in thermal expansion with platinum,
In addition, volumetric contraction during solidification separates the crucible from the inside, making it extremely easy to take out.
[実施例コ 次にこの発明の詳細な説明する。[Example code] Next, this invention will be explained in detail.
出発原料のNaBO2、BaCl2およびフラックスの
NaC1は、真空乾燥して、それぞれ23.0wt%、
34.5wt%、42.5wt%秤量し。The starting materials NaBO2, BaCl2 and the flux NaCl were vacuum dried to a concentration of 23.0 wt%, respectively.
Weighed 34.5wt% and 42.5wt%.
全体でほぼ50grを50ccの蓋付き白金ルツボに入
れ、900℃に5時間保って完全に融解した後、700
℃迄は10”C/hrで、それ以下400℃迄は20’
C/hrで冷却し、以下室温まで炉冷する。そのあとル
ツボ内の固化物を取り出し、流水でNaC1を溶かし去
り、その中に析出した口約のβ−BaBg○4単結晶を
収拾する。Approximately 50 gr in total was placed in a 50 cc platinum crucible with a lid, kept at 900 °C for 5 hours to completely melt, and then heated to 700 °C.
10"C/hr up to ℃, 20" below that up to 400℃
C/hr, and then furnace-cooled to room temperature. After that, the solidified material in the crucible is taken out, the NaCl is dissolved away with running water, and the β-BaBg○4 single crystal of about 100 ml is precipitated therein.
[発明の効果]
この発明は以上説明したように、塩化バリウムとメタ硼
酸ナトリウムを原料とする硼酸バリウムの生成反応にお
いて、1〜13.5モルの塩化ナトリウムをフラックス
として原料に混合して溶融し、生成反応物たる硼酸バリ
ウムをフラックス中に単結晶として祈出させることによ
り、きれいな晶癖を持つサイズlimφXl0mmまで
の柱状ないし針状の透明な結晶が育成でき、XIt&デ
ィフラクトメーターで測定した結果、結晶は高温相を全
く含まず、全体が純粋な低温相構造からなるβ−BaB
20Aの単結晶であることが証明された。[Effects of the Invention] As explained above, this invention is a method for producing barium borate using barium chloride and sodium metaborate as raw materials, by mixing 1 to 13.5 moles of sodium chloride with the raw materials as a flux and melting the mixture. By allowing barium borate, which is a reaction product, to form a single crystal in a flux, columnar or acicular transparent crystals with a clean crystal habit and a size of up to limφXl0mm can be grown, and as a result of measurement with an XIt & diffractometer, The crystal does not contain any high-temperature phase and consists entirely of a pure low-temperature phase structure.
It was proven to be a 20A single crystal.
第1図はBaO−8203系の相図、第2図はBaB2
O4−Na2B20を系の相図テアル。
図中、Cはモル比1: 1のコングルーエンド組1−゛
指定代理人 電子技術総合研究所長 佐M蕪平ij゛
L−−:、’−−−−+
第1図
−8203モルi。
C:モル沈1:10点Figure 1 is the phase diagram of BaO-8203 system, Figure 2 is BaB2
Phase diagram of the O4-Na2B20 system. In the figure, C is a group of congruends with a molar ratio of 1:1. . C: Molar precipitation 1:10 points
Claims (1)
リウムの生成反応に於て、塩化バリウム1モル、メタ硼
酸ナトリウム2モルの原料に対して1〜13.5モルの
塩化ナトリウムをフラックスとして混合し、これらを加
熱・溶融して反応を行わしめ、反応生成物たる硼酸バリ
ウムをフラックス中に結晶として析出させることを特徴
とする低温相硼酸バリウム単結晶の育成方法。In the production reaction of barium borate using barium chloride and sodium metaborate as raw materials, 1 to 13.5 moles of sodium chloride are mixed as a flux to 1 mole of barium chloride and 2 moles of sodium metaborate as raw materials. A method for growing a low-temperature phase barium borate single crystal, which is characterized by heating and melting to cause a reaction, and precipitating the reaction product barium borate as crystals in a flux.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4567487A JPS63215598A (en) | 1987-02-27 | 1987-02-27 | Production of barium borate single crystal having low temperature phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4567487A JPS63215598A (en) | 1987-02-27 | 1987-02-27 | Production of barium borate single crystal having low temperature phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63215598A true JPS63215598A (en) | 1988-09-08 |
JPH0469599B2 JPH0469599B2 (en) | 1992-11-06 |
Family
ID=12725936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4567487A Granted JPS63215598A (en) | 1987-02-27 | 1987-02-27 | Production of barium borate single crystal having low temperature phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63215598A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02279583A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Method for growing single crystal |
JPH03109297A (en) * | 1989-09-22 | 1991-05-09 | Sumitomo Metal Mining Co Ltd | Production of beta-barium metaborate single crystal |
EP0573738A3 (en) * | 1992-02-19 | 1996-03-27 | Crystal Tech Inc | Method for crystal growth of beta barium borate |
CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
-
1987
- 1987-02-27 JP JP4567487A patent/JPS63215598A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02279583A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Method for growing single crystal |
JPH03109297A (en) * | 1989-09-22 | 1991-05-09 | Sumitomo Metal Mining Co Ltd | Production of beta-barium metaborate single crystal |
EP0573738A3 (en) * | 1992-02-19 | 1996-03-27 | Crystal Tech Inc | Method for crystal growth of beta barium borate |
CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
Also Published As
Publication number | Publication date |
---|---|
JPH0469599B2 (en) | 1992-11-06 |
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