JPS63213971A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS63213971A
JPS63213971A JP62049498A JP4949887A JPS63213971A JP S63213971 A JPS63213971 A JP S63213971A JP 62049498 A JP62049498 A JP 62049498A JP 4949887 A JP4949887 A JP 4949887A JP S63213971 A JPS63213971 A JP S63213971A
Authority
JP
Japan
Prior art keywords
region
layer
channel
fet
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62049498A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546974B2 (enrdf_load_stackoverflow
Inventor
Tatsuya Yamashita
山下　達哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62049498A priority Critical patent/JPS63213971A/ja
Publication of JPS63213971A publication Critical patent/JPS63213971A/ja
Publication of JPH0546974B2 publication Critical patent/JPH0546974B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP62049498A 1987-03-03 1987-03-03 電界効果トランジスタ Granted JPS63213971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62049498A JPS63213971A (ja) 1987-03-03 1987-03-03 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62049498A JPS63213971A (ja) 1987-03-03 1987-03-03 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS63213971A true JPS63213971A (ja) 1988-09-06
JPH0546974B2 JPH0546974B2 (enrdf_load_stackoverflow) 1993-07-15

Family

ID=12832806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62049498A Granted JPS63213971A (ja) 1987-03-03 1987-03-03 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS63213971A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013512578A (ja) * 2009-12-03 2013-04-11 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013512578A (ja) * 2009-12-03 2013-04-11 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法
US9306017B2 (en) 2009-12-03 2016-04-05 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production

Also Published As

Publication number Publication date
JPH0546974B2 (enrdf_load_stackoverflow) 1993-07-15

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