JPS63196064A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63196064A JPS63196064A JP2725187A JP2725187A JPS63196064A JP S63196064 A JPS63196064 A JP S63196064A JP 2725187 A JP2725187 A JP 2725187A JP 2725187 A JP2725187 A JP 2725187A JP S63196064 A JPS63196064 A JP S63196064A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- semiconductor device
- film
- manufacturing
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 16
- 230000006378 damage Effects 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 5
- 230000001133 acceleration Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2725187A JPS63196064A (ja) | 1987-02-10 | 1987-02-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2725187A JPS63196064A (ja) | 1987-02-10 | 1987-02-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63196064A true JPS63196064A (ja) | 1988-08-15 |
| JPH0567067B2 JPH0567067B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-24 |
Family
ID=12215857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2725187A Granted JPS63196064A (ja) | 1987-02-10 | 1987-02-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63196064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401673A (en) * | 1992-09-02 | 1995-03-28 | Fujitsu Limited | Process for the formation of contact holes in semiconductor integrated circuit |
-
1987
- 1987-02-10 JP JP2725187A patent/JPS63196064A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401673A (en) * | 1992-09-02 | 1995-03-28 | Fujitsu Limited | Process for the formation of contact holes in semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567067B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |