JPS63192856A - 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法 - Google Patents

蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法

Info

Publication number
JPS63192856A
JPS63192856A JP62023946A JP2394687A JPS63192856A JP S63192856 A JPS63192856 A JP S63192856A JP 62023946 A JP62023946 A JP 62023946A JP 2394687 A JP2394687 A JP 2394687A JP S63192856 A JPS63192856 A JP S63192856A
Authority
JP
Japan
Prior art keywords
oxide
yttrium oxide
vapor deposition
vapor
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62023946A
Other languages
English (en)
Japanese (ja)
Inventor
Shungo Tsuboi
俊吾 坪井
Yoshifumi Matsushita
松下　嘉文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62023946A priority Critical patent/JPS63192856A/ja
Priority to CN87107819A priority patent/CN1017164B/zh
Priority to PCT/JP1988/000103 priority patent/WO1988005963A1/en
Priority to DE19883890060 priority patent/DE3890060C2/de
Priority to DE19883890060 priority patent/DE3890060T/de
Priority to KR1019880701199A priority patent/KR910008716B1/ko
Publication of JPS63192856A publication Critical patent/JPS63192856A/ja
Priority to SE8803506A priority patent/SE8803506D0/xx
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
JP62023946A 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法 Pending JPS63192856A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62023946A JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法
CN87107819A CN1017164B (zh) 1987-02-04 1987-11-12 在硅或砷化镓基底上制备反射防止膜的方法
PCT/JP1988/000103 WO1988005963A1 (en) 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof
DE19883890060 DE3890060C2 (de) 1987-02-04 1988-02-04 Verdampfbare Zttriumoxid, Tinaoxid und Zirkoniumoxid enthaltende Zusammensetzung und deren Verwendung
DE19883890060 DE3890060T (enrdf_load_stackoverflow) 1987-02-04 1988-02-04
KR1019880701199A KR910008716B1 (ko) 1987-02-04 1988-02-04 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법
SE8803506A SE8803506D0 (sv) 1987-02-04 1988-10-03 Yttriumoxidkomposition foer anvaendning vid foeraangning och foerfarande foer framstaellning av antireflexfilm daerav

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62023946A JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法

Publications (1)

Publication Number Publication Date
JPS63192856A true JPS63192856A (ja) 1988-08-10

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62023946A Pending JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法

Country Status (6)

Country Link
JP (1) JPS63192856A (enrdf_load_stackoverflow)
KR (1) KR910008716B1 (enrdf_load_stackoverflow)
CN (1) CN1017164B (enrdf_load_stackoverflow)
DE (2) DE3890060C2 (enrdf_load_stackoverflow)
SE (1) SE8803506D0 (enrdf_load_stackoverflow)
WO (1) WO1988005963A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321473A (ja) * 1989-06-19 1991-01-30 Matsushita Electric Ind Co Ltd 画像出力装置
CN102140621A (zh) * 2011-03-10 2011-08-03 苏州大学 一种致密复合二氧化钛薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (de) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Verfahren zur antikatalytischen beschichtung von thermoelementen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321473A (ja) * 1989-06-19 1991-01-30 Matsushita Electric Ind Co Ltd 画像出力装置
CN102140621A (zh) * 2011-03-10 2011-08-03 苏州大学 一种致密复合二氧化钛薄膜的制备方法

Also Published As

Publication number Publication date
CN87107819A (zh) 1988-08-17
KR890700927A (ko) 1989-04-28
DE3890060T (enrdf_load_stackoverflow) 1989-03-23
WO1988005963A1 (en) 1988-08-11
CN1017164B (zh) 1992-06-24
DE3890060C2 (de) 1990-08-16
SE8803506L (sv) 1988-10-03
SE8803506D0 (sv) 1988-10-03
KR910008716B1 (ko) 1991-10-19

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