Classifications

• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/083—Oxides of refractory metals or yttrium
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/30—Coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/30—Coatings
  • H10F77/306—Coatings for devices having potential barriers
  • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
  • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the present invention relates to a yttrium oxide composition for use in evaporation serving as an optical anti-reflection film for compounds of III - V groups such as GaAs, Si, and a process for preparing the anti-reflection film using the composition.
• the reflectance can be zero when preparing the anti-reflection film for Si or GaAs using the conventional evaporating composition of Zr0 2 or ⁇ i 3 N h , but the reflectance characteristic thereof changing with the passage of time is not always satisfactory. More specifically, a problem exists in that the conventional evaporating composition of Zr0 2 or Si 3 N 4 certainly satisfies the required characteristic at their earlier stage, but it goes impossible to obtain satisfiable reflectance therefrom with the lapse of time.
• the present invention was made to solve the above-discussed problem of the conventional evaporating 5 compostion and has an object of providing a yttrium oxide composition for use in evaporation having excellent characteristic as an optical anti-reflection film for
• Another object of the invention is to provide a 10. process for preparing an evaporated film which is chemically stable and very endurable and having high anti-reflection performance by using aforesaid yttrium oxide composition for evaporation.
• the yttrium oxide composition for use in evaporation 15 according to the present invention contains titanium oxide and zirconium oxide. In the process for preparing the anti-reflection film according to another invention, such yttrium oxide composition containing the titanium oxide and zirconium oxide is used. 20 According to the yttrium oxide composition for use in evaporation of the invention, the refractive index approximate to the theoretically required value of 1.87 can be obtained,, and the change of characteristic with the passage of time is small. 231 (BRIEF DESCRIPTION OF THE DRAWI GS)
• Figures 1 and 2 are characteristic diagrams showing a relation between the refractive index and the surface reflectance of the film.
• Figure 3 is a characteristic diagram showing a 30 relation between the mixing quantity of Ti ⁇ 2 and the refractive index of the film.
• Y2O3 was a material whose change with the passage of time was satisfactorily small. But the refractive index thereof is a little too smaller to obtain the required optimum refrative index, and therefore it is not preferable that the Y 0 3 is used in the form of single substance.
• vapor pressure of the respective components is approximate to one another other when preparing a mixed film in view of preventing the evaporating material from structural variation during the step of evaporation.
• the vapor pressure of Y 2 0 3 and that of Zr0 2 are almost equivalent within the temperature range of 2300°C - 2600°C, the Y 2 0 3 and Zr0 2 were used as main mixing materials, and further a Ti0 2 was added thereto to correct the refractive index.
• Ti0 2 is useful for reducing the heterogeneity of the structure in the direction of film thickness which is peculiar to Zr0 2 .
• the surface reflectance R is a quadratic function of the refractive index of the film. That is,
• expression (1) can be simplified to be a following expression (2):
• the quantity of zirconium oxide to be contained in the yttrium oxide composition for evaporation is within the range of 0 - 90 weight %, more preferably, 0 - 80 weight %, and the quantity of titanium to be contained therein is within the range of 0 - 7.3 weight %, more preferably, 0.5 - 4.8 weight %.
• the anti-reflection film according to the invention is also applicable to light emitting diode, photodiode and the like composed of Si-semiconductor.
• the evaporating material according to the invention is a mixed composition of yttrium oxide, zirconium oxide and titanium oxide so that the anti-reflection film is prepared corresponding to the refractive index of the semiconductor composed of Si or GaAs, the surface reflectance of the evaporated object can be substantially zero. Moreover, operation time (or life span) of the product can be extended since the change with the passage of time is reduced. (POSSIBILITY OF INDUSTRIAL UTILIZATION)
• the present invention can be utilized for temperature detecing device of a temperature sensor, laser diode, solar battery, etc. wherein optical fibers are incorporated.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Organic Chemistry (AREA)
• Manufacturing & Machinery (AREA)
• Ceramic Engineering (AREA)
• Materials Engineering (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Structural Engineering (AREA)
• Inorganic Chemistry (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Physical Vapour Deposition (AREA)
• Surface Treatment Of Optical Elements (AREA)
• Inorganic Compounds Of Heavy Metals (AREA)
• Photovoltaic Devices (AREA)
• Surface Treatment Of Glass (AREA)

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• 1987
  • 1987-02-04 JP JP62023946A patent/JPS63192856A/ja active Pending
  • 1987-11-12 CN CN87107819A patent/CN1017164B/zh not_active Expired
• 1988
  • 1988-02-04 DE DE19883890060 patent/DE3890060C2/de not_active Expired - Lifetime
  • 1988-02-04 DE DE19883890060 patent/DE3890060T/de active Pending
  • 1988-02-04 WO PCT/JP1988/000103 patent/WO1988005963A1/en active Application Filing
  • 1988-02-04 KR KR1019880701199A patent/KR910008716B1/ko not_active Expired
  • 1988-10-03 SE SE8803506A patent/SE8803506D0/xx not_active Application Discontinuation

Patent Citations (1)

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