KR910008716B1 - 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 - Google Patents

증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 Download PDF

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Publication number
KR910008716B1
KR910008716B1 KR1019880701199A KR880701199A KR910008716B1 KR 910008716 B1 KR910008716 B1 KR 910008716B1 KR 1019880701199 A KR1019880701199 A KR 1019880701199A KR 880701199 A KR880701199 A KR 880701199A KR 910008716 B1 KR910008716 B1 KR 910008716B1
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KR
South Korea
Prior art keywords
composition
antireflection film
deposition
vapor deposition
oxide
Prior art date
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Expired
Application number
KR1019880701199A
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English (en)
Korean (ko)
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KR890700927A (ko
Inventor
쯔보이슌고
요시후미 마쯔시따
Original Assignee
미쓰비시덴기 가부시기가이샤
시기 모리야
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Publication date
Application filed by 미쓰비시덴기 가부시기가이샤, 시기 모리야 filed Critical 미쓰비시덴기 가부시기가이샤
Publication of KR890700927A publication Critical patent/KR890700927A/ko
Application granted granted Critical
Publication of KR910008716B1 publication Critical patent/KR910008716B1/ko
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Surface Treatment Of Glass (AREA)
KR1019880701199A 1987-02-04 1988-02-04 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 Expired KR910008716B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-23946 1987-02-04
JP62023946A JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法
PCT/JP1988/000103 WO1988005963A1 (en) 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof

Publications (2)

Publication Number Publication Date
KR890700927A KR890700927A (ko) 1989-04-28
KR910008716B1 true KR910008716B1 (ko) 1991-10-19

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880701199A Expired KR910008716B1 (ko) 1987-02-04 1988-02-04 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법

Country Status (6)

Country Link
JP (1) JPS63192856A (enrdf_load_stackoverflow)
KR (1) KR910008716B1 (enrdf_load_stackoverflow)
CN (1) CN1017164B (enrdf_load_stackoverflow)
DE (2) DE3890060T (enrdf_load_stackoverflow)
SE (1) SE8803506D0 (enrdf_load_stackoverflow)
WO (1) WO1988005963A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850371B2 (ja) * 1989-06-19 1999-01-27 松下電器産業株式会社 画像出力装置
CN102140621A (zh) * 2011-03-10 2011-08-03 苏州大学 一种致密复合二氧化钛薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (de) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Verfahren zur antikatalytischen beschichtung von thermoelementen

Also Published As

Publication number Publication date
DE3890060T (enrdf_load_stackoverflow) 1989-03-23
CN87107819A (zh) 1988-08-17
WO1988005963A1 (en) 1988-08-11
SE8803506L (sv) 1988-10-03
KR890700927A (ko) 1989-04-28
CN1017164B (zh) 1992-06-24
SE8803506D0 (sv) 1988-10-03
DE3890060C2 (de) 1990-08-16
JPS63192856A (ja) 1988-08-10

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