JPS63190391A - 金―ゲルマニウム接着層を用いた圧電型検出素子の製造方法 - Google Patents

金―ゲルマニウム接着層を用いた圧電型検出素子の製造方法

Info

Publication number
JPS63190391A
JPS63190391A JP62267591A JP26759187A JPS63190391A JP S63190391 A JPS63190391 A JP S63190391A JP 62267591 A JP62267591 A JP 62267591A JP 26759187 A JP26759187 A JP 26759187A JP S63190391 A JPS63190391 A JP S63190391A
Authority
JP
Japan
Prior art keywords
piezoelectric
piezoelectric layer
layer
metal film
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62267591A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346991B2 (cg-RX-API-DMAC7.html
Inventor
キャロル・ゼット・ローズン
アーネスト・シー・ウィトク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Singer Co
Original Assignee
Singer Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Singer Co filed Critical Singer Co
Publication of JPS63190391A publication Critical patent/JPS63190391A/ja
Publication of JPH0346991B2 publication Critical patent/JPH0346991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Gyroscopes (AREA)
  • Measuring Fluid Pressure (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP62267591A 1986-10-22 1987-10-22 金―ゲルマニウム接着層を用いた圧電型検出素子の製造方法 Granted JPS63190391A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/921,520 US4769882A (en) 1986-10-22 1986-10-22 Method for making piezoelectric sensing elements with gold-germanium bonding layers
US921520 1997-09-02

Publications (2)

Publication Number Publication Date
JPS63190391A true JPS63190391A (ja) 1988-08-05
JPH0346991B2 JPH0346991B2 (cg-RX-API-DMAC7.html) 1991-07-17

Family

ID=25445555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62267591A Granted JPS63190391A (ja) 1986-10-22 1987-10-22 金―ゲルマニウム接着層を用いた圧電型検出素子の製造方法

Country Status (8)

Country Link
US (1) US4769882A (cg-RX-API-DMAC7.html)
EP (1) EP0265090B1 (cg-RX-API-DMAC7.html)
JP (1) JPS63190391A (cg-RX-API-DMAC7.html)
AU (1) AU595071B2 (cg-RX-API-DMAC7.html)
CA (1) CA1317478C (cg-RX-API-DMAC7.html)
DE (1) DE3771831D1 (cg-RX-API-DMAC7.html)
IL (1) IL83901A (cg-RX-API-DMAC7.html)
NO (1) NO178317C (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002144239A (ja) * 2000-11-08 2002-05-21 Alps Engineering:Kk ノズル

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1642962A3 (ru) * 1989-06-16 1991-04-15 Е.И.Новиков Пьезочастотный датчик силы
JP3039971B2 (ja) * 1989-09-19 2000-05-08 株式会社日立製作所 接合型圧電装置及び製造方法並びに接合型圧電素子
FR2693795B1 (fr) * 1992-07-15 1994-08-19 Commissariat Energie Atomique Jauge de contrainte sur support souple et capteur muni de ladite jauge.
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
US5755909A (en) * 1996-06-26 1998-05-26 Spectra, Inc. Electroding of ceramic piezoelectric transducers
US6164140A (en) * 1998-10-09 2000-12-26 Kalinoski; Richard W. Solid state transducer for Coriolis flowmeter
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
WO2001050106A1 (en) 2000-01-06 2001-07-12 Rosemount Inc. Grain growth of electrical interconnection for microelectromechanical systems (mems)
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6508129B1 (en) * 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6672168B2 (en) 2001-09-24 2004-01-06 Andrew Braugh Multi-level machine vibration tester marker pen
US6848316B2 (en) 2002-05-08 2005-02-01 Rosemount Inc. Pressure sensor assembly
WO2004023572A1 (en) * 2002-08-30 2004-03-18 Usc Corporation Piezoelectric generator
US7548012B2 (en) * 2003-09-17 2009-06-16 Kistler Holding, Ag Multi-layer piezoelectric measuring element, and pressure sensor or force sensor comprising such a measuring element
JP3866258B2 (ja) * 2004-08-24 2007-01-10 太平洋セメント株式会社 圧電デバイスおよびこれを備える圧電スイッチ
JP2009534651A (ja) * 2006-04-20 2009-09-24 ヴェクトロン インターナショナル，インク 高圧環境用の電気音響センサ
WO2011035147A2 (en) * 2009-09-18 2011-03-24 Delaware Capital Formation, Inc. Controlled compressional wave components of thickness shear mode multi-measurand sensors
EP3948967B1 (en) * 2019-03-23 2023-04-19 Secretary, Department Of Atomic Energy Diffusion bonding of piezoelectric crystal to metal wear plate
CN110379916B (zh) * 2019-07-05 2020-10-27 中国科学院物理研究所 压电陶瓷元件的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59145583A (ja) * 1983-02-09 1984-08-21 Matsushita Electric Ind Co Ltd 積層型圧電変位素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2709147A (en) * 1951-09-12 1955-05-24 Bell Telephone Labor Inc Methods for bonding silica bodies
US3179826A (en) * 1961-09-14 1965-04-20 Trott Winfield James Piezolelectric assembly
AT237930B (de) * 1962-09-12 1965-01-11 Hans Dipl Ing Dr Techn List Piezoelektrische Einrichtung, insbesondere zur Kraftmessung, und Verfahren zu ihrer Herstellung
US3590467A (en) * 1968-11-15 1971-07-06 Corning Glass Works Method for bonding a crystal to a solid delay medium
FR2182295A5 (cg-RX-API-DMAC7.html) * 1972-04-25 1973-12-07 Thomson Csf
US3897628A (en) * 1973-11-19 1975-08-05 Rca Corp Method of forming a thin piezoelectric body metallically bonded to a propagation medium crystal
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4109031A (en) * 1976-12-27 1978-08-22 United Technologies Corporation Stress relief of metal-ceramic gas turbine seals
US4078711A (en) * 1977-04-14 1978-03-14 Rockwell International Corporation Metallurgical method for die attaching silicon on sapphire devices to obtain heat resistant bond
US4295373A (en) * 1980-04-03 1981-10-20 United Technologies Corporation Fluidic angular rate sensor with integrated impulse jet pump assembly

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59145583A (ja) * 1983-02-09 1984-08-21 Matsushita Electric Ind Co Ltd 積層型圧電変位素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002144239A (ja) * 2000-11-08 2002-05-21 Alps Engineering:Kk ノズル

Also Published As

Publication number Publication date
EP0265090B1 (en) 1991-07-31
AU595071B2 (en) 1990-03-22
CA1317478C (en) 1993-05-11
NO178317B (no) 1995-11-20
EP0265090A2 (en) 1988-04-27
AU7944087A (en) 1988-04-28
EP0265090A3 (en) 1988-09-21
NO178317C (no) 1996-02-28
US4769882A (en) 1988-09-13
IL83901A (en) 1994-08-26
DE3771831D1 (de) 1991-09-05
JPH0346991B2 (cg-RX-API-DMAC7.html) 1991-07-17
NO874390L (no) 1988-04-25
NO874390D0 (no) 1987-10-21

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