JPS63186422A - ウエハサセプタ装置 - Google Patents
ウエハサセプタ装置Info
- Publication number
- JPS63186422A JPS63186422A JP62019348A JP1934887A JPS63186422A JP S63186422 A JPS63186422 A JP S63186422A JP 62019348 A JP62019348 A JP 62019348A JP 1934887 A JP1934887 A JP 1934887A JP S63186422 A JPS63186422 A JP S63186422A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- susceptor
- wafer
- vacuum
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 235000012431 wafers Nutrition 0.000 abstract description 58
- 239000010408 film Substances 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 21
- 238000010438 heat treatment Methods 0.000 abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 56
- 238000006243 chemical reaction Methods 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 238000007872 degassing Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- -1 Au) are present Chemical class 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019348A JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
| US07/391,556 US5119541A (en) | 1987-01-28 | 1988-01-28 | Wafer succeptor apparatus |
| PCT/JP1988/000067 WO1993013548A1 (en) | 1987-01-28 | 1988-01-28 | Wafer susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019348A JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63186422A true JPS63186422A (ja) | 1988-08-02 |
| JPH0530299B2 JPH0530299B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-07 |
Family
ID=11996885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62019348A Granted JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
Country Status (3)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174114A (ja) * | 1988-12-26 | 1990-07-05 | Toshiba Ceramics Co Ltd | サセプタ |
| JP2021050366A (ja) * | 2019-09-20 | 2021-04-01 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306895A (en) * | 1991-03-26 | 1994-04-26 | Ngk Insulators, Ltd. | Corrosion-resistant member for chemical apparatus using halogen series corrosive gas |
| US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
| US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
| SE9500326D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
| US6086680A (en) * | 1995-08-22 | 2000-07-11 | Asm America, Inc. | Low-mass susceptor |
| JPH10511507A (ja) * | 1995-10-20 | 1998-11-04 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 選択的に堆積された半導体領域を有する半導体装置の製造 |
| WO1999023691A2 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Improved low mass wafer support system |
| US6410172B1 (en) | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
| JP4374156B2 (ja) * | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法 |
| JP3579344B2 (ja) * | 2000-11-15 | 2004-10-20 | 日本碍子株式会社 | Ｉｉｉｖ族窒化物膜の製造方法および製造装置 |
| US20050170314A1 (en) * | 2002-11-27 | 2005-08-04 | Richard Golden | Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design |
| US8603248B2 (en) * | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| US8460764B2 (en) * | 2008-03-06 | 2013-06-11 | Georgia Tech Research Corporation | Method and apparatus for producing ultra-thin graphitic layers |
| JP5200171B2 (ja) * | 2008-08-29 | 2013-05-15 | ビーコ・インストゥルメンツ・インコーポレイテッド | ウエハキャリア、化学蒸着装置、および、ウエハを処理する方法 |
| US8801857B2 (en) | 2008-10-31 | 2014-08-12 | Asm America, Inc. | Self-centering susceptor ring assembly |
| US20110185969A1 (en) * | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
| US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
| US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
| CN106030761B (zh) | 2014-01-27 | 2019-09-13 | 威科仪器有限公司 | 用于化学气相沉积系统的晶片载体及其制造方法 |
| USD920936S1 (en) | 2019-01-17 | 2021-06-01 | Asm Ip Holding B.V. | Higher temperature vented susceptor |
| CN111446185A (zh) | 2019-01-17 | 2020-07-24 | Asm Ip 控股有限公司 | 通风基座 |
| USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
| TWI845682B (zh) | 2019-05-22 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 工件基座主體 |
| CN117878049A (zh) * | 2019-10-02 | 2024-04-12 | 佳能株式会社 | 晶片卡盘、其生产方法和曝光装置 |
| US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
| KR20210158333A (ko) | 2020-06-23 | 2021-12-30 | 에이에스엠 아이피 홀딩 비.브이. | 통기형 서셉터 |
| USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
| CN112687597B (zh) * | 2020-12-25 | 2022-08-05 | 集美大学 | 一种高温基片退火架 |
| USD1030687S1 (en) * | 2022-05-31 | 2024-06-11 | Asm Ip Holding B.V. | Susceptor |
| USD1067204S1 (en) * | 2022-05-31 | 2025-03-18 | Asm Ip Holding B.V. | Susceptor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3783822A (en) * | 1972-05-10 | 1974-01-08 | J Wollam | Apparatus for use in deposition of films from a vapor phase |
| JPS50747A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-05-02 | 1975-01-07 | ||
| US3980854A (en) * | 1974-11-15 | 1976-09-14 | Rca Corporation | Graphite susceptor structure for inductively heating semiconductor wafers |
| JPS5185649U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-12-28 | 1976-07-09 | ||
| JPS5185649A (ja) * | 1975-01-24 | 1976-07-27 | Nippon Signal Co Ltd | Kinsentorokuki |
| JPS5381069A (en) * | 1976-12-27 | 1978-07-18 | Hitachi Ltd | Production of susceptor in cvd device |
| JPS62205619A (ja) * | 1986-03-06 | 1987-09-10 | Dainippon Screen Mfg Co Ltd | 半導体の加熱方法及びその方法に使用されるサセプタ |
| US4858558A (en) * | 1988-01-25 | 1989-08-22 | Nippon Kokan Kabushiki Kaisha | Film forming apparatus |
-
1987
- 1987-01-28 JP JP62019348A patent/JPS63186422A/ja active Granted
-
1988
- 1988-01-28 WO PCT/JP1988/000067 patent/WO1993013548A1/ja unknown
- 1988-01-28 US US07/391,556 patent/US5119541A/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174114A (ja) * | 1988-12-26 | 1990-07-05 | Toshiba Ceramics Co Ltd | サセプタ |
| JP2021050366A (ja) * | 2019-09-20 | 2021-04-01 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0530299B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-07 |
| WO1993013548A1 (en) | 1993-07-08 |
| US5119541A (en) | 1992-06-09 |
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