JPS63169743A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63169743A JPS63169743A JP127087A JP127087A JPS63169743A JP S63169743 A JPS63169743 A JP S63169743A JP 127087 A JP127087 A JP 127087A JP 127087 A JP127087 A JP 127087A JP S63169743 A JPS63169743 A JP S63169743A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tungsten silicide
- amorphous
- oxide film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 30
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000009499 grossing Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UXBCHMIKTYBYTN-LQPTXBPRSA-N (3s,8s,9s,10r,13r,14s,17r)-3-[12-(3-iodophenyl)dodecoxy]-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthrene Chemical compound O([C@@H]1CC2=CC[C@H]3[C@@H]4CC[C@@H]([C@]4(CC[C@@H]3[C@@]2(C)CC1)C)[C@H](C)CCCC(C)C)CCCCCCCCCCCCC1=CC=CC(I)=C1 UXBCHMIKTYBYTN-LQPTXBPRSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP127087A JPS63169743A (ja) | 1987-01-07 | 1987-01-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP127087A JPS63169743A (ja) | 1987-01-07 | 1987-01-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63169743A true JPS63169743A (ja) | 1988-07-13 |
| JPH0571169B2 JPH0571169B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=11496762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP127087A Granted JPS63169743A (ja) | 1987-01-07 | 1987-01-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63169743A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130266A (en) * | 1990-08-28 | 1992-07-14 | United Microelectronics Corporation | Polycide gate MOSFET process for integrated circuits |
| US5618755A (en) * | 1994-05-17 | 1997-04-08 | Fuji Electric Co., Ltd. | Method of manufacturing a polycide electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182873A (ja) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | 半導体装置の製造方法 |
| JPS61174745A (ja) * | 1985-01-30 | 1986-08-06 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1987
- 1987-01-07 JP JP127087A patent/JPS63169743A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182873A (ja) * | 1982-04-21 | 1983-10-25 | Toshiba Corp | 半導体装置の製造方法 |
| JPS61174745A (ja) * | 1985-01-30 | 1986-08-06 | Fujitsu Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130266A (en) * | 1990-08-28 | 1992-07-14 | United Microelectronics Corporation | Polycide gate MOSFET process for integrated circuits |
| US5618755A (en) * | 1994-05-17 | 1997-04-08 | Fuji Electric Co., Ltd. | Method of manufacturing a polycide electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0571169B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4392150A (en) | MOS Integrated circuit having refractory metal or metal silicide interconnect layer | |
| US4635347A (en) | Method of fabricating titanium silicide gate electrodes and interconnections | |
| US5937325A (en) | Formation of low resistivity titanium silicide gates in semiconductor integrated circuits | |
| JPH05109737A (ja) | 薄膜トランジスタの製造方法 | |
| JP2005123625A (ja) | シリサイド化された電極を有する半導体装置の製造方法 | |
| JPH0638496B2 (ja) | 半導体装置 | |
| KR0161380B1 (ko) | 반도체장치의 트랜지스터 및 그 제조방법 | |
| KR950009283B1 (ko) | 반도체장치의 제조방법 | |
| JP2000196086A (ja) | チタンポリサイドゲ―トの形成方法 | |
| JPS63169743A (ja) | 半導体装置の製造方法 | |
| US6342440B1 (en) | Method for forming low-leakage impurity regions by sequence of high-and low-temperature treatments | |
| KR100466397B1 (ko) | 반도체 소자의 제조방법 | |
| JPH1064898A (ja) | 半導体装置の製造方法 | |
| KR20010004047A (ko) | 반도체 소자의 게이트 형성방법 | |
| KR100200184B1 (ko) | 반도체 장치의 제조방법 | |
| JPH01112755A (ja) | 半導体装置の製造方法 | |
| JP3196241B2 (ja) | 半導体装置の製造方法 | |
| JPH0587134B2 (enrdf_load_stackoverflow) | ||
| JPH05267164A (ja) | ケイ化物とのシリコン接点を備えた集積回路 | |
| JPH11186548A (ja) | 半導体装置及びその製造方法 | |
| KR960013635B1 (ko) | 트렌치형 캐패시터와 트랜지스터 연결을 위한 반도체 장치의 제조방법 | |
| JP4066022B2 (ja) | 半導体装置の製造方法 | |
| KR100447992B1 (ko) | 반도체소자의게이트전극형성방법 | |
| JPH02307218A (ja) | 半導体装置の製造方法 | |
| JPH10223561A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |