JPH0571169B2 - - Google Patents

Info

Publication number
JPH0571169B2
JPH0571169B2 JP62001270A JP127087A JPH0571169B2 JP H0571169 B2 JPH0571169 B2 JP H0571169B2 JP 62001270 A JP62001270 A JP 62001270A JP 127087 A JP127087 A JP 127087A JP H0571169 B2 JPH0571169 B2 JP H0571169B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
silicide film
metal silicide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62001270A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63169743A (ja
Inventor
Michihide Ayukawa
Kenzo Matsuda
Akitsu Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP127087A priority Critical patent/JPS63169743A/ja
Publication of JPS63169743A publication Critical patent/JPS63169743A/ja
Publication of JPH0571169B2 publication Critical patent/JPH0571169B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP127087A 1987-01-07 1987-01-07 半導体装置の製造方法 Granted JPS63169743A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP127087A JPS63169743A (ja) 1987-01-07 1987-01-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP127087A JPS63169743A (ja) 1987-01-07 1987-01-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63169743A JPS63169743A (ja) 1988-07-13
JPH0571169B2 true JPH0571169B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=11496762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP127087A Granted JPS63169743A (ja) 1987-01-07 1987-01-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63169743A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130266A (en) * 1990-08-28 1992-07-14 United Microelectronics Corporation Polycide gate MOSFET process for integrated circuits
JPH07312353A (ja) * 1994-05-17 1995-11-28 Fuji Electric Co Ltd 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182873A (ja) * 1982-04-21 1983-10-25 Toshiba Corp 半導体装置の製造方法
JPS61174745A (ja) * 1985-01-30 1986-08-06 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS63169743A (ja) 1988-07-13

Similar Documents

Publication Publication Date Title
US4392150A (en) MOS Integrated circuit having refractory metal or metal silicide interconnect layer
US4635347A (en) Method of fabricating titanium silicide gate electrodes and interconnections
US5541131A (en) Peeling free metal silicide films using ion implantation
JP4994585B2 (ja) シリサイド化された電極を有する半導体装置の製造方法及び該半導体装置
JP3215345B2 (ja) 半導体装置の製造方法
JPH11224949A (ja) サブミクロン金属ゲートmosトランジスタおよびその形成方法
KR0183490B1 (ko) 반도체 소자의 제조 방법
JPS6364063B2 (enrdf_load_stackoverflow)
KR0161380B1 (ko) 반도체장치의 트랜지스터 및 그 제조방법
TWI262561B (en) Method of forming ultra-shallow junction devices and its application in a memory device
KR20000042876A (ko) 반도체 소자의 게이트 전극 형성방법
JP3866874B2 (ja) シリサイド化素子を形成する方法
JPH0571169B2 (enrdf_load_stackoverflow)
JPH0613402A (ja) 半導体装置の製造方法
JPH0682668B2 (ja) 半導体装置の製造方法
KR100200184B1 (ko) 반도체 장치의 제조방법
JPH1064898A (ja) 半導体装置の製造方法
JP2819918B2 (ja) 半導体集積回路装置の製造方法
JPH0587134B2 (enrdf_load_stackoverflow)
JPH05267164A (ja) ケイ化物とのシリコン接点を備えた集積回路
JPH0529343A (ja) 微細半導体装置の製造方法
KR100505398B1 (ko) 반도체 소자의 게이트 전극 형성방법
KR100447992B1 (ko) 반도체소자의게이트전극형성방법
JPH0756866B2 (ja) 半導体集積回路装置の製造方法
JPH10125623A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees