JPH0587134B2 - - Google Patents
Info
- Publication number
- JPH0587134B2 JPH0587134B2 JP18934387A JP18934387A JPH0587134B2 JP H0587134 B2 JPH0587134 B2 JP H0587134B2 JP 18934387 A JP18934387 A JP 18934387A JP 18934387 A JP18934387 A JP 18934387A JP H0587134 B2 JPH0587134 B2 JP H0587134B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- tungsten silicide
- amorphous
- metal silicide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- -1 silicon ions Chemical class 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000005300 metallic glass Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 22
- 229910021342 tungsten silicide Inorganic materials 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18934387A JPS6433944A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18934387A JPS6433944A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6433944A JPS6433944A (en) | 1989-02-03 |
| JPH0587134B2 true JPH0587134B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=16239744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18934387A Granted JPS6433944A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6433944A (enrdf_load_stackoverflow) |
-
1987
- 1987-07-29 JP JP18934387A patent/JPS6433944A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6433944A (en) | 1989-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |