JPS63162539U - - Google Patents
Info
- Publication number
- JPS63162539U JPS63162539U JP5514387U JP5514387U JPS63162539U JP S63162539 U JPS63162539 U JP S63162539U JP 5514387 U JP5514387 U JP 5514387U JP 5514387 U JP5514387 U JP 5514387U JP S63162539 U JPS63162539 U JP S63162539U
- Authority
- JP
- Japan
- Prior art keywords
- plating liquid
- liquid tank
- side electrode
- semiconductor wafer
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Description
第１図は本考案の一実施例に係る半導体製造装
置の概略断面図、第２図は従来装置の概略断面図
である。
２……アノード側の電極、３……スペーサ、４
……カソード側の押え電極、６……メツキ液槽、
７……連通部、８……副メツキ液槽、Ｗ……半導
体ウエハ、Ｌ……メツキ液。
FIG. 1 is a schematic sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional apparatus. 2... Anode side electrode, 3... Spacer, 4
...Cathode side holding electrode, 6...Metting liquid tank,
7...Communication section, 8...Sub-plating liquid tank, W...Semiconductor wafer, L...Plating liquid.
Claims (1)
ツキ液槽の上端開口縁上に所定の間隙を介して配
置した半導体ウエハをカソード側の電極に接続し
、メツキ液を噴流させながら半導体ウエハに接触
させて該ウエハの各素子にバンプ電極を形成する
半導体製造装置において、 上記メツキ液槽に連通部を介して連通する副メ
ツキ液槽を設け、この副メツキ液槽内の該連通部
より高い位置に上記アノード側の電極を設けたこ
とを特徴とする半導体製造装置。[Claim for Utility Model Registration] An anode-side electrode is provided in a plating liquid tank, and a semiconductor wafer placed on the upper opening edge of the plating liquid tank with a predetermined gap is connected to the cathode-side electrode. In a semiconductor manufacturing apparatus that forms bump electrodes on each element of a semiconductor wafer by contacting the semiconductor wafer with a jet of liquid, a sub-plating liquid tank is provided which communicates with the plating liquid tank through a communication part, and the sub-plating liquid is A semiconductor manufacturing apparatus characterized in that the anode-side electrode is provided at a higher position than the communication portion in the tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5514387U JPS63162539U (en) | 1987-04-10 | 1987-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5514387U JPS63162539U (en) | 1987-04-10 | 1987-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63162539U true JPS63162539U (en) | 1988-10-24 |
Family
ID=30882780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5514387U Pending JPS63162539U (en) | 1987-04-10 | 1987-04-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63162539U (en) |
-
1987
- 1987-04-10 JP JP5514387U patent/JPS63162539U/ja active Pending