JPS63160312A - Slide contactor - Google Patents
Slide contactorInfo
- Publication number
- JPS63160312A JPS63160312A JP61314052A JP31405286A JPS63160312A JP S63160312 A JPS63160312 A JP S63160312A JP 61314052 A JP61314052 A JP 61314052A JP 31405286 A JP31405286 A JP 31405286A JP S63160312 A JPS63160312 A JP S63160312A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- sliding contact
- contact
- pattern
- monoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- JFLLBUCQAGGWFA-UHFFFAOYSA-N [O-2].[In+2] Chemical compound [O-2].[In+2] JFLLBUCQAGGWFA-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 15
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Contacts (AREA)
- Details Of Resistors (AREA)
- Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、計測器、各種機械等で、検出用、制御用、設
定用、発振器用などに使用されているボリュームスイッ
チ、ポテンシオメータ、トリマー（可変抵抗器の一種）
等で用いられる摺動接点装置の改良に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention applies to volume switches, potentiometers, and trimmers used for detection, control, setting, oscillators, etc. in measuring instruments, various machines, etc. (a type of variable resistor)
This paper relates to improvements to sliding contact devices used in, etc.
（従来の技術とその問題点）
従来より上記のボリュームスイッチ、ポテンシオメータ
、トリマー等で用いられる摺動接点装置は、セラミック
ス基板上にカーボン（Ｃ）や酸化ルテニウム（ＲｕＯｚ
）などの抵抗ペーストを焼成して厚膜抵抗パターンを形
成して成る配線板と、この配線扼の厚膜抵抗パターンに
対向して摺動し得るようになされたスプリング端子材に
Ａｇ接点材をかしめ或いは溶接して成るすり接点とによ
り構成されているが、この摺動接点装置は、ノイズが発
生し易く、又接触抵抗がやや高く且つ幾分ばらつきがあ
って不安定であり、しかも摩耗し易くて寿命が短く、接
触信頼性にやや欠けるものであった。(Prior art and its problems) Sliding contact devices conventionally used in the above-mentioned volume switches, potentiometers, trimmers, etc. are made of carbon (C) or ruthenium oxide (RuOz) on a ceramic substrate.
), etc., to form a thick-film resistor pattern, and a spring terminal material that can slide against the thick-film resistor pattern of the wiring board, and an Ag contact material. These sliding contact devices are constructed with caulked or welded sliding contacts, but these sliding contact devices tend to generate noise, have somewhat high contact resistance, are unstable due to some variation, and are prone to wear. It was easy to use, short-lived, and somewhat lacking in contact reliability.
この為、セラミックス基板上のカーボンや酸化ルテニウ
ムの厚膜抵抗パターンのすり接点と摺動する部分を、Ａ
ｇ−樹脂系の導体ペーストに置き換えて硬化するかある
いは厚膜抵抗パターンのすり接点と摺動する部分にＡｇ
−樹脂系導体ペーストを重ねて硬化することにより、接
触信頼性を改善し、又すり接点のＡｇ接点材を硫化防止
の為、Ａｇ−Ｐｄ３０〜５０ｗｔ％に置き換えている。For this reason, the part that slides with the sliding contact of the carbon or ruthenium oxide thick film resistor pattern on the ceramic substrate is
g-Replace with resin-based conductive paste and harden, or add Ag to the part that slides with the sliding contact of the thick film resistor pattern.
- Contact reliability is improved by layering and curing resin-based conductor paste, and the Ag contact material of the sliding contact is replaced with 30 to 50 wt% Ag-Pd to prevent sulfurization.
然し乍ら、Ａ ｇ −Ｐ ｄ ３０〜５０ｗｔ％の接点
材は１（ｖ１６０〜２００で硬すぎるのに対し、Ａｇ−
樹脂系の導体ペーストの硬化物である厚膜導体パターン
が軟らかい為、摩耗が多くなり、早期に寿命となる。However, the contact material with Ag-Pd 30-50wt% is too hard at v160-200, whereas Ag-
Because the thick film conductor pattern, which is a hardened resin-based conductor paste, is soft, it suffers from a lot of wear and reaches the end of its lifespan prematurely.
更にＡｇ−Ｐｄ３０〜５０ｗｔ％接点材は、電気伝導度
（ＩＡＣ３３，８〜５．５）が低い為、発熱する等の問
題点があった。Furthermore, since the Ag-Pd 30-50 wt% contact material has a low electrical conductivity (IAC33.8-5.5), there are problems such as heat generation.
（発明の目的）
本発明は、上記問題点を解決することのできる摺動接点
装置を提供することを目的とするものである。(Object of the Invention) An object of the present invention is to provide a sliding contact device that can solve the above problems.
（問題点を解決するための手段）
前記の問題点を解決するための本発明の摺動接点装置は
、セラミックス基板上に、抵抗ペーストを焼成して厚膜
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てＡｇ−樹脂系導体ペーストを硬化して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされＡｇ一酸化すず
３〜１５ｗｔ％一酸化インジウム１〜１０ｗｔ％の接点
材がスプリング端子材に取付けられて成るすり接点とに
より構成されていることを特徴とす２゜
本発明の摺動接点装置に於いて、すり接点の接点材をＡ
ｇ一酸化すず３〜１５−１％一酸化インジウム１〜１０
ｗｔ％とした理由は、Ａｇ中の酸化すずが３ｗｔ％或い
は酸化インジウムが１ｗｔ％未満だと潤滑効果が薄く、
そのすり接点がセラミックス基板上のＡｇ−樹脂系の厚
膜導体パターンとの接触に於いて凝着、剥離が生じ、酸
化すずが１５−ｔ％或いは酸化インジウムが１０ｗｔ％
を超えると、ノイズの発生原因となるからである。(Means for Solving the Problems) A sliding contact device of the present invention for solving the above-mentioned problems includes forming a thick film resistance pattern by firing a resistance paste on a ceramic substrate, and forming a thick film resistance pattern on a ceramic substrate. A wiring board formed by connecting to a resistor pattern and forming a thick film conductor pattern by curing an Ag-resin conductor paste, and an Ag board that can be slid against the thick film conductor pattern of the wiring board. 2. The sliding contact device of the present invention is characterized in that it is constituted by a sliding contact in which a contact material containing 3 to 15 wt% tin oxide and 1 to 10 wt% indium monoxide is attached to a spring terminal material. , the contact material of the sliding contact is A
g tin monoxide 3-15-1% indium monoxide 1-10
The reason why it is set as wt% is that if the tin oxide content in Ag is less than 3wt% or the indium oxide content is less than 1wt%, the lubricating effect will be weak.
Adhesion and peeling occur when the sliding contact comes into contact with the Ag-resin thick film conductor pattern on the ceramic substrate, and tin oxide is 15-t% or indium oxide is 10 wt%.
This is because if it exceeds this, it will cause noise generation.
（作用）
上記の如（構成された摺動接点装置は、すり接点とセラ
ミックス基板上の厚膜導体パターンとの接触作用におい
て、すり接点のＡｇ−Ｍ化すず３〜１５ｗｔ％一酸化イ
ンジウム１〜１０ｗｔ％接点材の硬さくＨｖ１２０〜１
５５）が軟らかく滑りやすいので、接触抵抗が低く安定
していて、Ａｇ−樹脂系厚膜導体パターンを損耗するこ
とが無く、又凝着、剥離が殆んど無くなり、摩耗が減少
す°るので、良好な接触が得られる。更にすり接点のＡ
ｇ一酸化すず３〜１５ｗｔ％一酸化インジウム１〜１０
ｗｔ％接点材の電気伝導度がｌＡＣ３６０〜７０％と良
好であるので、発熱しない。(Function) In the sliding contact device configured as described above, in the contact action between the sliding contact and the thick film conductor pattern on the ceramic substrate, the sliding contact has 3 to 15 wt% of Ag-M tin, 1 to 15 wt% of indium monoxide. Hardness of 10wt% contact material Hv120~1
55) is soft and slippery, so the contact resistance is low and stable, the Ag-resin thick film conductor pattern is not damaged, and adhesion and peeling are almost eliminated, reducing wear. , good contact can be obtained. Furthermore, A of the sliding contact
g Tin monoxide 3-15wt% Indium monoxide 1-10
Since the electrical conductivity of the wt% contact material is good at 360 to 70% lAC, no heat is generated.
（実施例）
本発明の摺動接点装置の実施例を説明すると、図に示す
如き板厚０．６鶴、直径３０１１の純度９８％のＡｌ２
Ｏ３基板１上の外周に幅３１ｉでＲｕＯ□の抵抗ペース
トをスクリーン印刷し、８００℃で焼成して厚さ１０μ
の厚膜抵抗パターン２を形成し、この厚膜抵抗パターン
２に接続して、周方向に、Ａｇ−樹脂系導体ペーストを
スクリーン印刷し、１３００℃で硬化して、０．２龍間
隔に幅０．２龍、長さ７ｍ１１、厚さ１０μの厚膜導体
パターン（Ａｇ−樹脂２６ｒｓｔ％）３を形成して配線
板４とした。一方、この配線板４の厚膜導体パターン３
に対向して夫々摺動するようになされた２種のすり接点
５は、Ａｇ一酸化すず１１−ｔ％一酸化インジウム７ｗ
ｔ％とＡｇ一酸化すず４ｔｓｔ％一酸化インジウム２ｗ
ｔ％一酸化ニンケル０．１ ｗｔ％の２種の接点線材（
直径１．５ｍｍ）から作製した頭部径３龍、頭部厚さ０
．６１ｍ、脚部径１．５龍、脚部長１．５ｍｍの２種の
リベット接点６を、夫々幅４龍、厚さ０．１５＋ｎのＢ
ｅ−Ｃｕより成るスプリング端子材７の接点取付穴に挿
入しかしめて成るものである。(Example) To explain an example of the sliding contact device of the present invention, as shown in the figure, a 98% pure Al2 plate with a plate thickness of 0.6 mm and a diameter of 3011 mm is used.
A resistive paste of RuO□ was screen printed on the outer periphery of the O3 substrate 1 with a width of 31i, and baked at 800°C to a thickness of 10μ.
Form a thick film resistor pattern 2, connect to this thick film resistor pattern 2, screen print an Ag-resin conductor paste in the circumferential direction, cure at 1300°C, and add widths at 0.2 dragon intervals. A wiring board 4 was prepared by forming a thick film conductor pattern (Ag-resin 26rst%) 3 having a length of 0.2 mm, a length of 7 m11, and a thickness of 10 μm. On the other hand, thick film conductor pattern 3 of this wiring board 4
The two types of sliding contacts 5 are made of Ag, tin monoxide 11-t% indium monoxide, 7w
t% and Ag tin monoxide 4tst% indium monoxide 2w
Two types of contact wires containing 0.1 wt% nickel monoxide (
Head diameter 3 made from 1.5mm diameter, head thickness 0
．． Two types of rivet contacts 6 with a length of 61 m, a leg diameter of 1.5 mm, and a leg length of 1.5 mm are each made of B with a width of 4 mm and a thickness of 0.15 + n.
It is inserted into a contact mounting hole of a spring terminal material 7 made of e-Cu and is fastened.
このように構成された実施例１．２の摺動接点装置と、
Ａ ｇ −Ｐ ｄ３０ｗｔ％接点材を有するすり接点を
配線板のＡｇ−樹脂の厚膜導体パターンと対向させて成
る従来の摺動接点装置とを、下記の試験条件にて摺動開
閉試験を行った処、下記の表に示すような結果を得た。The sliding contact device of Example 1.2 configured in this way,
A sliding opening/closing test was conducted under the following test conditions using a conventional sliding contact device consisting of a sliding contact having a 30wt% A g -P d contact material facing a thick film conductor pattern made of Ag-resin on a wiring board. However, we obtained the results shown in the table below.
試験条件
接触カニ１０ｇ、動作：回転往復型（５５度）、駆動二
６０ストローク／ｍｉｎ、通電＝１２Ｖ、１００ｍＡ（
以下余白）
上記の表で明らかなように実施例１．２の摺動接点装置
は、従来例の摺動装置に比し、寿命が大概倍増している
ことが判る。これはひとえにすり接点５のＡｇ一酸化す
ず３〜１５ｗｔ％一酸化インジウム１〜ｌ０ｗｔ％接点
材の硬さが軟らかく滑りやすい為、対向するＡｇ−Ｐｄ
系の厚膜抵抗パターン３を損耗することが無く、又凝着
、剥離することが無く、摩耗が減少し、更にＡｇ一酸化
すず３〜１５ｗｔ％一酸化インジウム１〜１０ｗｔ％の
接点材の電気伝導度が良好で発熱することが無いからで
ある。Test conditions Contact crab 10g, operation: rotating reciprocating type (55 degrees), drive 260 strokes/min, energization = 12V, 100mA (
As is clear from the above table, the life of the sliding contact device of Example 1.2 is almost twice as long as that of the conventional sliding device. This is because the contact material of the sliding contact 5 is soft and slippery due to the hardness of the Ag-tin monoxide 3 to 15 wt% indium monoxide 1 to 10 wt% contact material.
There is no damage to the thick film resistor pattern 3 of the system, there is no adhesion or peeling, and wear is reduced, and the electrical resistance of the contact material is 3-15 wt% Ag, tin monoxide, and 1-10 wt% indium monoxide. This is because it has good conductivity and does not generate heat.
尚、前記の寿命は、厚膜導体パターン３の摩耗により、
すり接点５がＡｆｆｉＺＯ３基板との接触となって、オ
ープン状態（接触抵抗無限大）となった場合と、厚膜導
体パターン３間のスリット部の目詰まりによりショート
した場合で判定した。Note that the above-mentioned lifespan is due to wear of the thick film conductor pattern 3.
The evaluation was made based on the case where the sliding contact 5 came into contact with the AffiZO3 substrate and became an open state (infinite contact resistance), and the case where a short circuit occurred due to clogging of the slit between the thick film conductor patterns 3.
尚、上記実施例の摺動接点装置の配線板４は円形である
が、矩形でも良いものである。その場合、厚膜抵抗パタ
ーンは矩形の配線板の一例端に形成し、厚膜導体パター
ンは厚膜抵抗パターンに接続してその長手方向に一定間
隔に平行に形成すると良い。そしてすり接点は厚ＩＩ！
導体パターンに対向して厚膜、抵抗パターンの長手方向
に摺動し得るようにする。またセラミックス基板上にベ
ローズ形状に前後に往復させた厚膜抵抗パターンを形成
し、その上に厚膜導体パターンを一定間隔に並べて形成
した配線板と、この配線板の厚膜導体パターンに対向し
て摺動するようにしたすり接点とより成る摺動接点装置
としても良い。Although the wiring board 4 of the sliding contact device in the above embodiment is circular, it may also be rectangular. In that case, the thick film resistor pattern is preferably formed at one end of a rectangular wiring board, and the thick film conductor patterns are preferably connected to the thick film resistor pattern and formed parallel to it at regular intervals in its longitudinal direction. And the sliding contact is thick II!
The thick film faces the conductor pattern and can be slid in the longitudinal direction of the resistor pattern. In addition, a thick film resistor pattern is formed on a ceramic substrate in a bellows shape and reciprocated back and forth, and a wiring board is formed on which thick film conductor patterns are arranged at regular intervals, and the wiring board faces the thick film conductor pattern. It is also possible to use a sliding contact device consisting of a sliding contact that is slidable.
さらに実施例２のように酸化すずあるいは酸化インジウ
ムの一部を０．０１〜１ｗｔ％の範囲で鉄族元素の酸化
物で置き替えてもよいものである。Furthermore, as in Example 2, a portion of tin oxide or indium oxide may be replaced with an oxide of an iron group element in a range of 0.01 to 1 wt%.
（発明の効果）
以上の説明で判るように本発明の摺動接点装置は、すり
接点のＡｇ一酸化すず３〜１５−１％一酸化インジウム
２〜１０ｗｔ％が硬さく ＨＶ １２０〜１５５）が軟
らかく滑りやすいので、接触作用においてセラミックス
基板上のＡｇ−樹脂系厚膜導体パターンが損耗すること
が無く、又凝着、剥離が殆んど無くなり、摩耗が減少す
るので、良好な接触が得られる。(Effects of the Invention) As can be seen from the above explanation, the sliding contact device of the present invention has hardness (HV 120-155) of Ag, tin monoxide (3-15-1%) and indium monoxide (2-10wt%) in the sliding contact. Since it is soft and slippery, the Ag-resin thick film conductor pattern on the ceramic substrate will not be worn out during contact action, and there will be almost no adhesion or peeling, reducing wear, so good contact can be obtained. .
従って、接触信頼性が向上し、摺動接点装置の寿命が著
しく増長する。更にすり接点のＡｇ一酸化すず３〜１５
ｗｔ％一酸化インジウム１〜１０ｗｔ％接点材の電気伝
導度が良好であるので、接触作用において、発熱せず、
溶着が起こりにくい。従って、摺動接点装置の耐溶着性
が著しく向上する。Therefore, the contact reliability is improved and the life of the sliding contact device is significantly extended. Furthermore, Ag tin monoxide 3-15 of the sliding contact
Since the electrical conductivity of the contact material of 1 to 10 wt% indium monoxide is good, no heat is generated during contact action,
Welding is less likely to occur. Therefore, the welding resistance of the sliding contact device is significantly improved.
図は本発明の摺動接点装置の一実施例を示す概略斜視図
である。
出願人 田中貴金属工業株式会社
手続補正書（自発）
１．事件の表示
昭和６１年特許願第３１４０５２号
２、発明の名称
摺動接点装置
３、補正をする者
事件との関係 特許出願人
明細書の発明の詳細な説明の欄
５、補正の内容
（１）明細書第７真下から１０行目のｒＰｄ系の厚膜抵
抗」を「樹脂系の厚膜導体」に補正する。The figure is a schematic perspective view showing an embodiment of the sliding contact device of the present invention. Applicant: Tanaka Kikinzoku Kogyo Co., Ltd. Procedural amendment (voluntary) 1. Display of the case Patent Application No. 314052 of 1985 2, Name of the invention Sliding contact device 3, Person making the amendment Relationship to the case Detailed description of the invention column 5 of the patent applicant's specification, Contents of the amendment (1) ) "rPd-based thick film resistor" in the 10th line from the bottom of the seventh line of the specification is corrected to "resin-based thick film conductor."
Claims (1)
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てＡｇ−樹脂系導体ペーストを硬化して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされＡｇ−酸化すず
３〜１５ｗｔ％一酸化インジウム１〜１０ｗｔ％の接点
材がスプリング端子材に取り付けられて成るすり接点と
により構成されていることを特徴とする摺動接点装置。A wiring board is formed by firing a resistor paste to form a thick film resistor pattern on a ceramic substrate, and connecting it to the thick film resistor pattern to harden an Ag-resin conductor paste to form a thick film conductor pattern. , a sliding contact formed by attaching a contact material of 3 to 15 wt % of Ag-tin oxide and 1 to 10 wt % of indium monoxide to a spring terminal material so as to be able to slide against the thick film conductor pattern of the wiring board. A sliding contact device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61314052A JPS63160312A (en) | 1986-12-24 | 1986-12-24 | Slide contactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61314052A JPS63160312A (en) | 1986-12-24 | 1986-12-24 | Slide contactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63160312A true JPS63160312A (en) | 1988-07-04 |
Family
ID=18048642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61314052A Pending JPS63160312A (en) | 1986-12-24 | 1986-12-24 | Slide contactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63160312A (en) |
-
1986
- 1986-12-24 JP JP61314052A patent/JPS63160312A/en active Pending
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