JPS63196001A - Slide contactor - Google Patents
Slide contactorInfo
- Publication number
- JPS63196001A JPS63196001A JP62028471A JP2847187A JPS63196001A JP S63196001 A JPS63196001 A JP S63196001A JP 62028471 A JP62028471 A JP 62028471A JP 2847187 A JP2847187 A JP 2847187A JP S63196001 A JPS63196001 A JP S63196001A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- sliding contact
- contact
- monoxide
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical compound [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 16
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Adjustable Resistors (AREA)
- Contacts (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、計測器、各種機械等で、検出用、制御用、設
定用、発振器用などに使用されているボリュームスイッ
チ、ポテンシオメータ、トリマー(可変抵抗器の一種)
等で用いられる摺動接点装置の改良に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention applies to volume switches, potentiometers, and trimmers used for detection, control, setting, oscillators, etc. in measuring instruments, various machines, etc. (a type of variable resistor)
This paper relates to improvements to sliding contact devices used in, etc.
(従来の技術とその問題点)
従来より上記のボリュームスイッチ、ポテンシオメータ
、トリマー等で用いられる摺動接点装置は、セラミック
ス基板上にカーボン(C)や酸化ルテニウム(RuO□
)などの抵抗ペーストを焼成して厚膜抵抗パターンを形
成して成る配線板と、この配線板の厚膜抵抗パターンに
対向して摺動し得るようになされたスプリング端子材に
Ag接点材をかしめ或いは溶接して成るすり接点とによ
り構成されているが、この摺動接点装置は、ノイズが発
生し易く、又接触抵抗がやや高(且つ幾分ばらつきがあ
って不安定であり、しかも摩耗し易くて寿命が短く、接
触信頼性にやや欠けるものであった。(Prior art and its problems) Sliding contact devices conventionally used in the above-mentioned volume switches, potentiometers, trimmers, etc. are made of carbon (C) or ruthenium oxide (RuO□
), etc., to form a thick film resistance pattern, and a spring terminal material that can slide against the thick film resistance pattern of this wiring board, and an Ag contact material. The sliding contact device is constructed with a caulked or welded sliding contact, but this sliding contact device tends to generate noise, has a rather high contact resistance (and is unstable due to some variation, and is prone to wear). It was easy to contact, had a short lifespan, and was somewhat lacking in contact reliability.
この為、セラミックス基板上のカーボンや酸化ルテニウ
ムの厚膜抵抗パターンのすり接点と摺動する部分を、C
u−樹脂系の導体ペーストに置き換えて硬化するかある
いは厚膜抵抗パターンのすり接点と摺動する部分にCu
−樹脂系導体ペーストを重ねて硬化することにより、接
触信頼性を改善し、又すり接点のAg接点材を硫化防止
の為、Ag−Pd30〜50wt%に置き換えている。For this reason, the part that slides with the sliding contact of the carbon or ruthenium oxide thick film resistor pattern on the ceramic substrate is
Either replace it with a u-resin conductor paste and cure it, or add Cu to the part that slides with the sliding contact of the thick film resistor pattern.
- Contact reliability is improved by layering and curing resin-based conductor paste, and the Ag contact material of the sliding contact is replaced with 30 to 50 wt% Ag-Pd to prevent sulfurization.
然し乍ら、A g −P d 30〜50wt%の接点
材はHv160〜200で硬すぎるのに対し、Cu−樹
脂系の導体ペーストの硬化物である厚膜導体パターンが
軟らかい為、摩耗が多くなり、早期に寿命となる。However, the contact material with A g -P d 30 to 50 wt% is too hard at Hv 160 to 200, whereas the thick film conductor pattern, which is a cured product of Cu-resin conductor paste, is soft, resulting in increased wear. It reaches the end of its lifespan early.
更にAg−Pd30〜50wt%接点材は、電気伝導度
(IAC33,8〜5.5)が低い為、発熱する等の問
題点があった。Furthermore, since the Ag-Pd 30-50 wt% contact material has a low electrical conductivity (IAC33.8-5.5), there are problems such as heat generation.
(発明の目的)
本発明は、上記問題点を解決することのできる摺動接点
装置を提供することを目的とするものである。(Object of the Invention) An object of the present invention is to provide a sliding contact device that can solve the above problems.
(問題点を解決するための手段)
前記の問題点を解決するための本発明の摺動接点装置は
、セラミックス基板上に、抵抗ペーストを焼成して厚膜
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てCu−樹脂系導体ペーストを硬化して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされAg一酸化すず
5〜15at%一酸化ビスマス2〜10wt%の接点材
がスプリング端子材に取付けられて成るすり接点とによ
り構成されていることを特徴とする。(Means for Solving the Problems) A sliding contact device of the present invention for solving the above-mentioned problems includes forming a thick film resistance pattern by firing a resistance paste on a ceramic substrate, and forming a thick film resistance pattern on a ceramic substrate. A wiring board formed by connecting to a resistor pattern and forming a thick film conductor pattern by curing a Cu-resin conductor paste, and an Ag plate which can be slid against the thick film conductor pattern of the wiring board. The present invention is characterized in that it is composed of a contact material containing 5 to 15 at% of tin oxide and 2 to 10 wt.% of bismuth monoxide and a sliding contact that is attached to a spring terminal material.
本発明の摺動接点装置に於いて、すり接点の接点材をA
g一酸化すず5〜15wt%一酸化ビスマス2〜10w
t%とした理由は、Ag中の酸化すずが5wt%或いは
酸化ビスマスが2wt%未満だと潤滑効果が薄く、その
すり接点がセラミックス基板上のCu−樹脂系の厚膜導
体パターンとの接触に於いて凝着、剥離が生じ、酸化す
ずが15wt%或いは酸化ビスマスが10wt%を超え
ると、ノイズの発生原因となるからである。In the sliding contact device of the present invention, the contact material of the sliding contact is A
g Tin monoxide 5-15wt% Bismuth monoxide 2-10w
The reason why it is set at t% is that if the tin oxide content in Ag is less than 5wt% or the bismuth oxide content is less than 2wt%, the lubricating effect will be weak, and the sliding contact will be difficult to contact with the Cu-resin thick film conductor pattern on the ceramic substrate. This is because adhesion and peeling occur, and if tin oxide exceeds 15 wt% or bismuth oxide exceeds 10 wt%, noise will be generated.
(作用)
上記の如く構成された摺動接点装置は、すり接点とセラ
ミックス基板上の厚膜導体パターンとの接触作用におい
て、すり接点のAg一酸化すず5〜15@t%一酸化ビ
スマス2〜10wt%接点材の硬さくHv120〜15
5)が軟らかく滑りやすいので、接触抵抗が低く安定し
ていて、Cu−樹脂系厚膜導体パターンを損耗すること
が無く、又凝着、剥離が殆んど無くなり、摩耗が減少す
るので、良好な接触が得られる。更にすり接点のAg一
酸化すず5〜15wt%一酸化ビスマス2〜10wt%
接点材の電気伝導度がlAC360〜70%と良好であ
るので、発熱しない。(Function) In the sliding contact device configured as described above, in the contact action between the sliding contact and the thick film conductor pattern on the ceramic substrate, the sliding contact has Ag, tin monoxide, 5 to 15@t%, bismuth monoxide, 2 to Hardness of 10wt% contact material Hv120-15
5) Since it is soft and slippery, the contact resistance is low and stable, and the Cu-resin thick film conductor pattern is not damaged, and there is almost no adhesion or peeling, and wear is reduced, so it is good. You can get good contact. In addition, the sliding contacts include Ag, tin monoxide, 5 to 15 wt%, bismuth monoxide, 2 to 10 wt%.
Since the electrical conductivity of the contact material is good at 360-70% lAC, no heat is generated.
(実施例)
本発明の摺動接点装置の実施例を説明すると、図に示す
如き板厚0.6n、直径30waの純度98%のAlt
03基板1上の外周に幅3箇でRu Oxの抵抗ペース
トをスクリーン印刷し、800℃で焼成して厚さ10μ
の厚膜抵抗パターン2を形成し、この厚膜抵抗パターン
2に接続して、周方向に、Cu−樹脂系導体ペーストを
スクリーン印刷し、1300℃で硬化して、0 、2
**間隔に幅0.2肩、長さ7fl、厚さ10μの厚膜
導体パターン(Cu−樹脂26wt%)3を形成して配
線板4とした。一方、この配線板4の厚膜導体パターン
3に対向して夫々摺動するようになされた2種のすり接
点5は、Ag一酸化すず8wt%一酸化ビスマス6wt
%とAg一酸化すず10wt%一酸化ビスマス5wt%
一酸化ニッケル0.1一七%の2種の接点線材(直径1
.5mm)から作製した頭部径3鶴、頭部厚さ0.6f
i、脚部径1.5N、脚部長1.5mの2種のリベット
接点6を、夫々幅4n、厚さ0.15mmのBe−Cu
より成るスプリング端子材7の接点取付穴に挿入しかし
めて成るものである。(Example) To explain an example of the sliding contact device of the present invention, as shown in the figure, a 98% pure Al having a plate thickness of 0.6n and a diameter of 30wa is used.
03 Screen print RuOx resistance paste in three widths on the outer periphery of the substrate 1, and bake it at 800℃ to a thickness of 10μ.
A thick film resistor pattern 2 of
** Thick film conductor patterns (Cu-resin 26 wt%) 3 having a width of 0.2 shoulders, a length of 7 fl, and a thickness of 10 μm were formed at intervals to form a wiring board 4. On the other hand, the two types of sliding contacts 5, which are made to slide oppositely to the thick film conductor pattern 3 of the wiring board 4, are composed of Ag, tin monoxide, 8 wt%, bismuth monoxide, 6 wt.
% and Ag tin monoxide 10wt% bismuth monoxide 5wt%
Two types of contact wires containing nickel monoxide 0.117% (diameter 1
.. Head diameter 3 cranes made from 5mm), head thickness 0.6f
i. Two types of rivet contacts 6 with a leg diameter of 1.5N and a leg length of 1.5m are each made of Be-Cu with a width of 4n and a thickness of 0.15mm.
It is inserted into the contact mounting hole of the spring terminal material 7 made of
このように構成された実施例1.2の摺動接点装置と、
A g −P d30wt%接点材を有するすり接点を
配線板のCu−樹脂の厚膜導体パターンと対向させて成
る従来の摺動接点装置とを、下記の試験条件にて摺動開
閉試験を行った処、下記の表に示すような結果を得た。The sliding contact device of Example 1.2 configured in this way,
A sliding opening/closing test was conducted under the following test conditions using a conventional sliding contact device consisting of a sliding contact having a 30wt% contact material and facing a thick film conductor pattern made of Cu-resin on a wiring board. However, we obtained the results shown in the table below.
試験条件
接触カニ10g、動作:回転往復型(55度)、駆動=
60ストローク/wins通電:12V、100mA(
以下余白)
上記の表で明らかなように実施例1.2の摺動接点装置
は、従来例の摺動装置に比し、寿命が大損倍増している
ことが判る。これはひとえにすり接点5のAg一酸化す
ず5〜15wt%一酸化ビスマス2〜10wt%接点材
の硬さが軟らか(滑りやすい為、対向するCu−樹脂系
の厚膜導体パターン3を損耗することが無く、又凝着、
剥離することが無く、摩耗が減少し、更にAg一酸化す
ず5〜15wt%一酸化ビスマス2〜10wt%の接点
材の電気伝導度が良好で発熱することが無いからである
。Test conditions Contact crab 10g, operation: rotating reciprocating type (55 degrees), drive =
60 strokes/wins Energization: 12V, 100mA (
As is clear from the above table, the life of the sliding contact device of Example 1.2 is twice as long as that of the conventional sliding device. This is because the hardness of the Ag, tin monoxide, 5 to 15 wt%, bismuth monoxide, 2 to 10 wt%, contact material of the sliding contact 5 is soft (it is slippery, so the opposing Cu-resin thick film conductor pattern 3 may be damaged). There is no adhesive, and it sticks again.
This is because there is no peeling, wear is reduced, and the electrical conductivity of the contact material of Ag, tin monoxide, 5 to 15 wt%, and bismuth monoxide, 2 to 10 wt%, is good and does not generate heat.
尚、前記の寿命は、厚膜導体パターン3の摩耗により、
すり接点5がAltos基板との接触となって、オープ
ン状態(接触抵抗無限大)となった場合と、厚膜導体パ
ターン3間のスリット部の目詰まりによりショートした
場合で判定した。Note that the above-mentioned lifespan is due to wear of the thick film conductor pattern 3.
The judgment was made based on the case where the sliding contact 5 came into contact with the Altos board and became an open state (infinite contact resistance), and the case where a short circuit occurred due to clogging of the slit between the thick film conductor patterns 3.
尚、上記実施例の摺動接点装置の配線板4は円形である
が、矩形でも良いものである。その場合、厚膜抵抗パタ
ーンは矩形の配線板の一側端に形成し、厚膜導体パター
ンは厚膜抵抗パターンに接続してその長手方向に一定間
隔に平行に形成すると良い。そしてすり接点は厚膜導体
パターンに対向して厚膜抵抗パターンの長手方向に摺動
し得るようにする。またセラミックス基板上にベローズ
形状に前後に往復させた厚膜抵抗パターンを形成し、そ
の上に厚膜導体パターンを一定間隔に並べて形成した配
線板と、この配線板の厚膜導体パターンに対向して摺動
するようにしたすり接点とより成る摺動接点装置として
も良い。Although the wiring board 4 of the sliding contact device in the above embodiment is circular, it may also be rectangular. In that case, the thick film resistor pattern is preferably formed on one side end of the rectangular wiring board, and the thick film conductor patterns are preferably connected to the thick film resistor pattern and formed in parallel at regular intervals in the longitudinal direction thereof. The sliding contact is slidable in the longitudinal direction of the thick film resistor pattern, facing the thick film conductor pattern. In addition, a thick film resistor pattern is formed on a ceramic substrate in a bellows shape and reciprocated back and forth, and a wiring board is formed on which thick film conductor patterns are arranged at regular intervals, and the wiring board faces the thick film conductor pattern. It is also possible to use a sliding contact device consisting of a sliding contact that is slidable.
さらに実施例2のように酸化すず又は酸化ビスマスの一
部を0.01〜Int%の範囲で鉄族元素の酸化物で置
き替えてもよいものである。Further, as in Example 2, a portion of tin oxide or bismuth oxide may be replaced with an oxide of an iron group element in a range of 0.01 to Int%.
(発明の効果)
以上の説明で判るように本発明の摺動接点装置は、すり
接点のAg=酸化すず5〜15wt%一酸化ビス?ス2
〜10wt%が硬さく Hv 120〜155)が軟ら
か(滑りやすいので、接触作用においてセラミックス基
板上のCu−4id脂系厚膜導体パターンが損耗するこ
とが無く、又凝着、剥離が殆んど無くなり、摩耗が減少
するので、良好な接触が得られる。(Effects of the Invention) As can be seen from the above explanation, the sliding contact device of the present invention has a sliding contact in which Ag=5 to 15 wt% of tin oxide and bis monoxide. S2
~10wt% is hard (Hv 120-155) but soft (slippery), so the Cu-4id fat-based thick film conductor pattern on the ceramic substrate will not be damaged by contact action, and there will be almost no adhesion or peeling. Good contact is obtained as there is no wear and tear.
従って、接触信頼性が向上し、摺動接点装置の寿命が著
しく増長する。更にすり接点のAg一酸化すず5〜15
wt%一酸化ビスマス2〜10wt%接点材の電気伝導
度が良好であるので、接触作用において、発熱せず、溶
着が起こりにくい。従って、摺動接点装置の耐溶着性が
著しく向上する。Therefore, the contact reliability is improved and the life of the sliding contact device is significantly extended. Furthermore, Ag tin monoxide 5 to 15 of the sliding contact
Since the electrical conductivity of the 2 to 10 wt% bismuth monoxide contact material is good, no heat is generated during contact action, and welding is less likely to occur. Therefore, the welding resistance of the sliding contact device is significantly improved.
図は本発明の摺動接点装置の一実施例を示す概略斜視図
である。The figure is a schematic perspective view showing an embodiment of the sliding contact device of the present invention.
Claims (1)
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てCu−樹脂系導体ペーストを硬化して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされAg−酸化すず
5〜15wt%一酸化ビスマス2〜10wt%の接点材
がスプリング端子材に取り付けられて成るすり接点とに
より構成されていることを特徴とする摺動接点装置。A wiring board formed by firing a resistor paste to form a thick film resistor pattern on a ceramic substrate, and connecting the thick film resistor pattern to harden a Cu-resin conductor paste to form a thick film conductor pattern. , a sliding contact in which a contact material containing 5 to 15 wt% of Ag-tin oxide and 2 to 10 wt% of bismuth monoxide is attached to a spring terminal material so as to be able to slide against the thick film conductor pattern of the wiring board. A sliding contact device comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62028471A JPS63196001A (en) | 1987-02-10 | 1987-02-10 | Slide contactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62028471A JPS63196001A (en) | 1987-02-10 | 1987-02-10 | Slide contactor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63196001A true JPS63196001A (en) | 1988-08-15 |
Family
ID=12249565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62028471A Pending JPS63196001A (en) | 1987-02-10 | 1987-02-10 | Slide contactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63196001A (en) |
-
1987
- 1987-02-10 JP JP62028471A patent/JPS63196001A/en active Pending
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