JPS63157930U - - Google Patents
Info
- Publication number
- JPS63157930U JPS63157930U JP5005087U JP5005087U JPS63157930U JP S63157930 U JPS63157930 U JP S63157930U JP 5005087 U JP5005087 U JP 5005087U JP 5005087 U JP5005087 U JP 5005087U JP S63157930 U JPS63157930 U JP S63157930U
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- main plane
- main
- semiconductor element
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
- Die Bonding (AREA)
Description
第１図は本考案の実施例の要部を示す断面図、
第２図は同実施例に係る半導体素子を示す平面図
、第３図は熱補償板の他の例を示す断面図、第４
図は従来のサイリスタを示す構造図、第５図は従
来のサイリスタを示す平面図である。
１……半導体素子、２……モリブデン板、３…
…凹部、４……高誘電体。
FIG. 1 is a sectional view showing the main parts of an embodiment of the present invention;
FIG. 2 is a plan view showing a semiconductor element according to the same embodiment, FIG. 3 is a cross-sectional view showing another example of the heat compensator, and FIG.
The figure is a structural diagram showing a conventional thyristor, and FIG. 5 is a plan view showing the conventional thyristor. 1... Semiconductor element, 2... Molybdenum plate, 3...
...Concavity, 4...High dielectric material.
Claims (1)
層とが露出し、前記主平面に半導体素子の熱膨張
率に近似した熱補償板を介して外部主電極を圧接
した半導体装置において、 前記熱補償板の前記主平面に対向する面のうち
、制御電極層と対向する領域に凹部を形成したこ
とを特徴とする半導体装置。[Claims for Utility Model Registration] A main electrode layer and a control electrode layer are exposed on the same main plane of a semiconductor element, and an external main electrode is provided on the main plane through a thermal compensator whose coefficient of thermal expansion approximates that of the semiconductor element. What is claimed is: 1. A semiconductor device in which a recess is formed in a region of a surface of the thermal compensator plate facing the main plane that faces the control electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5005087U JPS63157930U (en) | 1987-04-02 | 1987-04-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5005087U JPS63157930U (en) | 1987-04-02 | 1987-04-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63157930U true JPS63157930U (en) | 1988-10-17 |
Family
ID=30873049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5005087U Pending JPS63157930U (en) | 1987-04-02 | 1987-04-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63157930U (en) |
-
1987
- 1987-04-02 JP JP5005087U patent/JPS63157930U/ja active Pending
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