JPS61166548U - - Google Patents
Info
- Publication number
- JPS61166548U JPS61166548U JP4975385U JP4975385U JPS61166548U JP S61166548 U JPS61166548 U JP S61166548U JP 4975385 U JP4975385 U JP 4975385U JP 4975385 U JP4975385 U JP 4975385U JP S61166548 U JPS61166548 U JP S61166548U
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- load resistor
- drive transistor
- active region
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図Ａ〜Ｈは本考案に係るインバータの製法
例を示す工程図、第２図は従来のインバータを示
す断面図である。
２１はＳｉＯ２の絶縁基板、２２は多結晶Ｓｉ
薄膜、２５は熱酸化膜、２８は活性領域、２９は
ＰＳＧ膜、３６は薄膜トランジスタ、３７は負荷
抵抗、３８はインバータである。
1A to 1H are process diagrams showing an example of the manufacturing method of an inverter according to the present invention, and FIG. 2 is a sectional view showing a conventional inverter. 21 is an insulating substrate of SiO2 , 22 is a polycrystalline Si
25 is a thermal oxide film, 28 is an active region, 29 is a PSG film, 36 is a thin film transistor, 37 is a load resistor, and 38 is an inverter.
Claims (1)
膜で形成され、上記駆動トランジスタの活性領域
の膜厚が上記負荷抵抗の膜厚より小に選定されて
成るインバータ。 A drive transistor and a load resistor are formed of a common semiconductor thin film, and the thickness of an active region of the drive transistor is selected to be smaller than the thickness of the load resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4975385U JPS61166548U (en) | 1985-04-03 | 1985-04-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4975385U JPS61166548U (en) | 1985-04-03 | 1985-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61166548U true JPS61166548U (en) | 1986-10-16 |
Family
ID=30567239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4975385U Pending JPS61166548U (en) | 1985-04-03 | 1985-04-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166548U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2012029872A1 (en) * | 2010-09-02 | 2013-10-31 | シャープ株式会社 | Signal processing circuit, inverter circuit, buffer circuit, level shifter, flip-flop, driver circuit, display device |
-
1985
- 1985-04-03 JP JP4975385U patent/JPS61166548U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2012029872A1 (en) * | 2010-09-02 | 2013-10-31 | シャープ株式会社 | Signal processing circuit, inverter circuit, buffer circuit, level shifter, flip-flop, driver circuit, display device |