JPS6161840U - - Google Patents
Info
- Publication number
- JPS6161840U JPS6161840U JP14766784U JP14766784U JPS6161840U JP S6161840 U JPS6161840 U JP S6161840U JP 14766784 U JP14766784 U JP 14766784U JP 14766784 U JP14766784 U JP 14766784U JP S6161840 U JPS6161840 U JP S6161840U
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- cutout
- bonded
- heat sink
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
第１図はこの考案による半導体装置の一実施例
を示す斜視図、第２図は絶縁基板の内部ストレス
の変化の様子を表わしたグラフ、第３図は従来の
半導体装置を示す斜視図である。
図において、１は絶縁基板、１Ａは欠落部、２
は半導体素子、３は放熱板、４は接合材、５は空
隙である。なお図中、同一符号は同一又は相当部
分を示す。
FIG. 1 is a perspective view showing an embodiment of a semiconductor device according to this invention, FIG. 2 is a graph showing changes in internal stress of an insulating substrate, and FIG. 3 is a perspective view showing a conventional semiconductor device. . In the figure, 1 is an insulating substrate, 1A is a missing part, and 2
3 is a semiconductor element, 3 is a heat sink, 4 is a bonding material, and 5 is a gap. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
量が異なる回路素子が実装された絶縁基板とを共
通の放熱板に接合した半導体装置において、上記
絶縁基板の内部ストレスが最も小さい領域で且つ
その角の部分に欠落部を設け、上記半導体素子を
上記欠落部内に上記絶縁基板と間隔を隔てて配設
して上記放熱板に接合したことを特徴とする半導
体装置。 In a semiconductor device in which a semiconductor element and an insulating substrate on which circuit elements that produce different amounts of heat when energized are bonded to a common heat sink, an area where the internal stress of the insulating substrate is least and a corner thereof is bonded to a common heat sink. A semiconductor device characterized in that a cutout is provided in the cutout, and the semiconductor element is disposed within the cutout at a distance from the insulating substrate and is bonded to the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14766784U JPS6161840U (en) | 1984-09-27 | 1984-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14766784U JPS6161840U (en) | 1984-09-27 | 1984-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6161840U true JPS6161840U (en) | 1986-04-25 |
Family
ID=30705894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14766784U Pending JPS6161840U (en) | 1984-09-27 | 1984-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6161840U (en) |
-
1984
- 1984-09-27 JP JP14766784U patent/JPS6161840U/ja active Pending
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