JPS63157462A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS63157462A JPS63157462A JP61304676A JP30467686A JPS63157462A JP S63157462 A JPS63157462 A JP S63157462A JP 61304676 A JP61304676 A JP 61304676A JP 30467686 A JP30467686 A JP 30467686A JP S63157462 A JPS63157462 A JP S63157462A
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- impurity diffusion
- diode
- diffusion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304676A JPS63157462A (ja) | 1986-12-20 | 1986-12-20 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304676A JPS63157462A (ja) | 1986-12-20 | 1986-12-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63157462A true JPS63157462A (ja) | 1988-06-30 |
JPH0583190B2 JPH0583190B2 (enrdf_load_stackoverflow) | 1993-11-25 |
Family
ID=17935883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61304676A Granted JPS63157462A (ja) | 1986-12-20 | 1986-12-20 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63157462A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02170568A (ja) * | 1988-10-28 | 1990-07-02 | Sgs Thomson Microelettronica Spa | ダーリントン装置 |
JP2006108543A (ja) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2008171939A (ja) * | 2007-01-10 | 2008-07-24 | Sansha Electric Mfg Co Ltd | ダイオード内蔵トランジスタ |
-
1986
- 1986-12-20 JP JP61304676A patent/JPS63157462A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02170568A (ja) * | 1988-10-28 | 1990-07-02 | Sgs Thomson Microelettronica Spa | ダーリントン装置 |
JP2006108543A (ja) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2008171939A (ja) * | 2007-01-10 | 2008-07-24 | Sansha Electric Mfg Co Ltd | ダイオード内蔵トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
JPH0583190B2 (enrdf_load_stackoverflow) | 1993-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |