JPS6315741B2 - - Google Patents

Info

Publication number
JPS6315741B2
JPS6315741B2 JP17612486A JP17612486A JPS6315741B2 JP S6315741 B2 JPS6315741 B2 JP S6315741B2 JP 17612486 A JP17612486 A JP 17612486A JP 17612486 A JP17612486 A JP 17612486A JP S6315741 B2 JPS6315741 B2 JP S6315741B2
Authority
JP
Japan
Prior art keywords
pressure
wafer
semiconductor substrate
gas
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17612486A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62229845A (ja
Inventor
Takanori Hayafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8320979A external-priority patent/JPS567436A/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17612486A priority Critical patent/JPS62229845A/ja
Publication of JPS62229845A publication Critical patent/JPS62229845A/ja
Publication of JPS6315741B2 publication Critical patent/JPS6315741B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP17612486A 1979-06-29 1986-07-26 気相成長方法 Granted JPS62229845A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17612486A JPS62229845A (ja) 1979-06-29 1986-07-26 気相成長方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8320979A JPS567436A (en) 1979-06-29 1979-06-29 High pressure treating device
JP17612486A JPS62229845A (ja) 1979-06-29 1986-07-26 気相成長方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8320979A Division JPS567436A (en) 1979-06-29 1979-06-29 High pressure treating device

Publications (2)

Publication Number Publication Date
JPS62229845A JPS62229845A (ja) 1987-10-08
JPS6315741B2 true JPS6315741B2 (ko) 1988-04-06

Family

ID=26424271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17612486A Granted JPS62229845A (ja) 1979-06-29 1986-07-26 気相成長方法

Country Status (1)

Country Link
JP (1) JPS62229845A (ko)

Also Published As

Publication number Publication date
JPS62229845A (ja) 1987-10-08

Similar Documents

Publication Publication Date Title
EP0015694B1 (en) Method for forming an insulating film on a semiconductor substrate surface
US5246500A (en) Vapor phase epitaxial growth apparatus
US7632758B2 (en) Process and apparatus for forming oxide film, and electronic device material
US20030124873A1 (en) Method of annealing an oxide film
EP1361605A1 (en) Method for producing material of electronic device
US5155062A (en) Method for silicon carbide chemical vapor deposition using levitated wafer system
US4874464A (en) Process for epitaxial deposition of silicon
KR20010021745A (ko) 원위치 증기 발생 방법
JP2009032774A (ja) 熱処理装置、熱処理用部材、及び熱処理用部材の製造方法
JP2002500450A (ja) 酸化層及びシリコン層のインサイチュウ成長
JP2006203038A (ja) 窒化膜の形成方法、半導体装置の製造方法、キャパシタの製造方法及び窒化膜形成装置
JPS6315741B2 (ko)
JPS6224630A (ja) 熱酸化膜形成方法及びその装置
US5881090A (en) Quartz used in semiconductor manufacturing device, apparatus for manufacturing the quartz, and method for manufacturing the same
JPS63283124A (ja) 反応炉
JPH07176498A (ja) 反応ガスの予熱装置を備えた反応炉
KR0146173B1 (ko) 반도체 소자의 산화막 제조방법
JPS6015933A (ja) 薄膜形成法
JP2005268699A (ja) 半導体装置の製造方法
KR880000276B1 (ko) 모오스(mos) 트랜지스터에서의 게이트 절연층 형성방법
JP2693465B2 (ja) 半導体ウェハの処理装置
KR100288988B1 (ko) 수직형저압화학기상증착장치의생산효율증대및박막질개선을위한공정및장치
JPH06349741A (ja) 薄膜の形成方法
JPH0845852A (ja) 気相成長装置と気相成長方法
JPS5754332A (en) Forming method for thermonitride silicon film