JPS6315677B2 - - Google Patents

Info

Publication number

JPS6315677B2

JPS6315677B2 JP62040249A JP4024987A JPS6315677B2 JP S6315677 B2 JPS6315677 B2 JP S6315677B2 JP 62040249 A JP62040249 A JP 62040249A JP 4024987 A JP4024987 A JP 4024987A JP S6315677 B2 JPS6315677 B2 JP S6315677B2

Authority

JP

Japan

Prior art keywords

voltage

word line

memory cell

memory

setting

Prior art date

1987-02-25

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
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• 230000015654 memory Effects 0.000 claims description 96
• 239000004065 semiconductor Substances 0.000 claims description 16
• 230000005669 field effect Effects 0.000 claims description 14
• 239000000758 substrate Substances 0.000 claims description 14
• 229910052751 metal Inorganic materials 0.000 claims description 4
• 239000002184 metal Substances 0.000 claims description 4
• 239000010410 layer Substances 0.000 description 12
• 230000008859 change Effects 0.000 description 7
• 238000010586 diagram Methods 0.000 description 7
• 239000012535 impurity Substances 0.000 description 7
• 238000009792 diffusion process Methods 0.000 description 6
• 239000003990 capacitor Substances 0.000 description 4
• 230000007423 decrease Effects 0.000 description 4
• 230000000295 complement effect Effects 0.000 description 3
• 230000009471 action Effects 0.000 description 2
• 229910052782 aluminium Inorganic materials 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 239000007772 electrode material Substances 0.000 description 2
• 229910044991 metal oxide Inorganic materials 0.000 description 2
• 150000004706 metal oxides Chemical class 0.000 description 2
• 230000002093 peripheral effect Effects 0.000 description 2
• 230000003321 amplification Effects 0.000 description 1
• 230000008901 benefit Effects 0.000 description 1
• 239000004020 conductor Substances 0.000 description 1
• 230000008878 coupling Effects 0.000 description 1
• 238000010168 coupling process Methods 0.000 description 1
• 238000005859 coupling reaction Methods 0.000 description 1
• 238000001514 detection method Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 238000007667 floating Methods 0.000 description 1
• 239000011229 interlayer Substances 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 230000007257 malfunction Effects 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 238000003199 nucleic acid amplification method Methods 0.000 description 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
• 230000004044 response Effects 0.000 description 1
• 230000000630 rising effect Effects 0.000 description 1