JPS63153916A - 半導体スイツチ回路 - Google Patents
半導体スイツチ回路Info
- Publication number
- JPS63153916A JPS63153916A JP61255023A JP25502386A JPS63153916A JP S63153916 A JPS63153916 A JP S63153916A JP 61255023 A JP61255023 A JP 61255023A JP 25502386 A JP25502386 A JP 25502386A JP S63153916 A JPS63153916 A JP S63153916A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- resistor
- fet
- source
- normally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 230000001052 transient effect Effects 0.000 abstract description 5
- 101150015217 FET4 gene Proteins 0.000 abstract 3
- 101150073536 FET3 gene Proteins 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/078,791 US4801822A (en) | 1986-08-11 | 1987-07-28 | Semiconductor switching circuit |
CA 543599 CA1275708C (en) | 1986-08-11 | 1987-07-31 | Semiconductor switching circuit |
KR1019870008570A KR900005818B1 (ko) | 1986-08-11 | 1987-08-05 | 반도체 스위칭회로 |
GB8718919A GB2194699B (en) | 1986-08-11 | 1987-08-10 | Semiconductor switching circuit |
FR8711362A FR2602620B1 (fr) | 1986-08-11 | 1987-08-10 | Circuit de commutation a semiconducteurs |
SE8703111A SE500062C2 (sv) | 1986-08-11 | 1987-08-10 | Elektronisk elkopplare |
IT8748295A IT1211712B (it) | 1986-08-11 | 1987-08-11 | Circuito di commutazione a semiconduttore |
DE19873726682 DE3726682A1 (de) | 1986-08-11 | 1987-08-11 | Halbleiter-schaltkreis |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-188272 | 1986-08-11 | ||
JP18827286 | 1986-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63153916A true JPS63153916A (ja) | 1988-06-27 |
JPH0481894B2 JPH0481894B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Family
ID=16220761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61255023A Granted JPS63153916A (ja) | 1986-08-11 | 1986-10-27 | 半導体スイツチ回路 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS63153916A (enrdf_load_stackoverflow) |
KR (1) | KR900005818B1 (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244907A (ja) * | 1989-03-17 | 1990-09-28 | Matsushita Electric Works Ltd | 光結合型リレー回路 |
JPH03238918A (ja) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH04167617A (ja) * | 1990-10-26 | 1992-06-15 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH04167618A (ja) * | 1990-10-26 | 1992-06-15 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH05114847A (ja) * | 1991-03-26 | 1993-05-07 | American Teleph & Telegr Co <Att> | 半導体リレー |
JP2009147022A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 光半導体リレー |
JP2021125762A (ja) * | 2020-02-04 | 2021-08-30 | 新日本無線株式会社 | 高周波スイッチ回路 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036062A (enrdf_load_stackoverflow) * | 1973-07-02 | 1975-04-04 | ||
JPS5368066A (en) * | 1976-11-30 | 1978-06-17 | Hitachi Ltd | Semiconductor switch |
JPS553259A (en) * | 1978-06-21 | 1980-01-11 | Fujitsu Ltd | Switching circuit |
JPS5529972U (enrdf_load_stackoverflow) * | 1978-08-16 | 1980-02-27 | ||
US4492883A (en) * | 1982-06-21 | 1985-01-08 | Eaton Corporation | Unpowered fast gate turn-off FET |
JPS61165210A (ja) * | 1985-01-17 | 1986-07-25 | Ishikawajima Harima Heavy Ind Co Ltd | 圧延機 |
JPH0478210A (ja) * | 1990-07-18 | 1992-03-12 | Miharu Tsushin Kk | ノッチフィルター又はバンドエルミネートフィルターの周波数自動制御方法 |
-
1986
- 1986-10-27 JP JP61255023A patent/JPS63153916A/ja active Granted
-
1987
- 1987-08-05 KR KR1019870008570A patent/KR900005818B1/ko not_active Expired
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036062A (enrdf_load_stackoverflow) * | 1973-07-02 | 1975-04-04 | ||
JPS5368066A (en) * | 1976-11-30 | 1978-06-17 | Hitachi Ltd | Semiconductor switch |
JPS553259A (en) * | 1978-06-21 | 1980-01-11 | Fujitsu Ltd | Switching circuit |
JPS5529972U (enrdf_load_stackoverflow) * | 1978-08-16 | 1980-02-27 | ||
US4492883A (en) * | 1982-06-21 | 1985-01-08 | Eaton Corporation | Unpowered fast gate turn-off FET |
JPS61165210A (ja) * | 1985-01-17 | 1986-07-25 | Ishikawajima Harima Heavy Ind Co Ltd | 圧延機 |
JPH0478210A (ja) * | 1990-07-18 | 1992-03-12 | Miharu Tsushin Kk | ノッチフィルター又はバンドエルミネートフィルターの周波数自動制御方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244907A (ja) * | 1989-03-17 | 1990-09-28 | Matsushita Electric Works Ltd | 光結合型リレー回路 |
JPH03238918A (ja) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH04167617A (ja) * | 1990-10-26 | 1992-06-15 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH04167618A (ja) * | 1990-10-26 | 1992-06-15 | Matsushita Electric Works Ltd | 半導体リレー回路 |
JPH05114847A (ja) * | 1991-03-26 | 1993-05-07 | American Teleph & Telegr Co <Att> | 半導体リレー |
JP2009147022A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 光半導体リレー |
JP2021125762A (ja) * | 2020-02-04 | 2021-08-30 | 新日本無線株式会社 | 高周波スイッチ回路 |
Also Published As
Publication number | Publication date |
---|---|
KR880003483A (ko) | 1988-05-17 |
KR900005818B1 (ko) | 1990-08-11 |
JPH0481894B2 (enrdf_load_stackoverflow) | 1992-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |