JPS63151023A - Formation of minute opening pattern - Google Patents
Formation of minute opening patternInfo
- Publication number
- JPS63151023A JPS63151023A JP29940486A JP29940486A JPS63151023A JP S63151023 A JPS63151023 A JP S63151023A JP 29940486 A JP29940486 A JP 29940486A JP 29940486 A JP29940486 A JP 29940486A JP S63151023 A JPS63151023 A JP S63151023A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- photoresist
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は微小開口バターン形成方法に関し、特に微小領
域のパターンの開口技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming a pattern of minute openings, and more particularly to an opening technique for a pattern in a minute area.
従来の技術
半導体素子の微細化に伴いパターンを開口しなければな
らない面積も非常に小さくなってきており、特に基板と
配線を接続するコンタクトホールなどでは１μｍ以下の
正方形と非常に微小な領域を開口する必要性がある。Conventional technology With the miniaturization of semiconductor devices, the area in which a pattern must be opened has become extremely small, and in particular, for contact holes that connect the substrate and wiring, it is necessary to open very small square areas of 1 μm or less. There is a need to do so.
従来の方法でコンタクトホールのパターン形成を行なう
場合の一例を第２図Ａ、Ｈに示す。An example of forming a contact hole pattern using a conventional method is shown in FIGS. 2A and 2H.
所定の工程をへた基板１の主面に絶縁膜２（例えばＳｉ
３Ｎ４．ＣＶＤＳｉｏ２．！Ｊ７ｆｊ）’−７’された
８１０２膜、ボロンとリンガドープされた５ｌｏ２膜等
の単層あるいは多層膜）を形成したのち、回転塗布法等
により感光性樹脂膜４（以下フォトレジストという）を
塗布する。An insulating film 2 (for example, Si
3N4. CVDSio2. ! J7fj)'-7' 8102 film, boron and ringer doped 5lo2 film, etc. single layer or multilayer film) is formed, and then a photosensitive resin film 4 (hereinafter referred to as photoresist) is applied by spin coating method etc. .
次に所定のパターンが形成されたマスク５を用いて７オ
トレジスト４を選択的に露光する（第２図Ａ）。Next, the photoresist 4 is selectively exposed using a mask 5 on which a predetermined pattern is formed (FIG. 2A).
その後所定の方法により現像処理を行ないコンタクトホ
ール形成用のフォトレジストパターン４′を形成したの
ちフォトレジストパターンをマスクとして絶縁膜をエツ
チングしコンタクトホールパさくなると７オトレジスト
に到達する光量がいちじるしく減少するとともに絶縁膜
が透過膜であるため、絶縁膜表面で反射する光と基板表
面で反射する光とに分散しフォトレジストにとう達した
光が有効に利用されず露光に要する時間が面積が大きい
場合に比べいちじるしく増加し例えば０．５〜０．６
／Ｊ ｍ角パターンではそれ以上のパターンに比べ数倍
〜１０倍の電光時間が必要となシスループツトがいちじ
るしく低下してしまう。また露光時間は絶縁膜の種類お
よび構成によっても大きく変わってしまう。After that, a development process is performed using a prescribed method to form a photoresist pattern 4' for forming a contact hole, and then the insulating film is etched using the photoresist pattern as a mask.As the contact hole becomes thinner, the amount of light reaching the photoresist 7 is significantly reduced. Since the insulating film is a transparent film, the light that is reflected on the insulating film surface and the light that is reflected on the substrate surface are dispersed, and the light that reaches the photoresist is not used effectively and the time required for exposure increases when the area is large. It increases significantly, for example, 0.5 to 0.6.
/Jm square pattern requires several times to ten times more lighting time than larger pattern, and the sysloop is significantly reduced. Furthermore, the exposure time varies greatly depending on the type and structure of the insulating film.
本発明はかかる点に鑑みてなされたもので、フォトレジ
ストに達した光を有効に利用することによ）微小面積の
開口に要する露光時間を短縮しスループットを向上させ
ることができる方法を提供することを目的としている。The present invention has been made in view of the above, and provides a method that can shorten the exposure time required to open a microscopic area (by effectively utilizing the light that reaches the photoresist) and improve throughput. The purpose is to
問題点を解決するための手段
本発明は上記問題点を解決するために絶縁膜を形成した
後、その上に表面反射率の大きい膜を堆積したのちパタ
ーン形成を行なうものである。Means for Solving the Problems The present invention solves the above problems by forming an insulating film, depositing a film with a high surface reflectance thereon, and then forming a pattern.
作 用
本発明は上記の方法により微小面積の開口バターンを形
成する際、下地絶縁膜の影響をうけることなくかつ、露
光時間の短縮によりスループットの向上をはかることが
できる。Function The present invention can improve throughput by shortening exposure time without being affected by the underlying insulating film when forming an opening pattern with a minute area by the above method.
実施例
第１図Ａ−Ｃは本発明の方法でコンタクトホールパター
ンを形成する場合の一実施例を示す。Embodiment FIGS. 1A to 1C show an embodiment in which a contact hole pattern is formed by the method of the present invention.
所定の工程をへた基板１の主面絶縁膜２（ＳｉＯ２゜Ｓ
ｉ Ｎ ＣＶＤＳｉＯ２，す／）’−プ５１０２
、 リｙとボロンドープ５ｌｏ２等の単層あるいは多層
膜）を形成し、次に表面反射率の高い第１の膜３（例え
ばＡｌ、Ｗなどの金属膜等）を形成したのち回転塗布法
等によりフオドレジスト４を塗布する。次に所定のパタ
ーンが形成されたマスク６を用いてフォトレジスト４を
選択的に露光する（第１図Ａ）。The main surface insulating film 2 (SiO2°S
i N CVDSiO2,su/)'-p5102
After forming a first film 3 (for example, a metal film such as Al or W) having a high surface reflectance (for example, a metal film such as Al or W), Apply hood resist 4. Next, the photoresist 4 is selectively exposed using a mask 6 on which a predetermined pattern is formed (FIG. 1A).
その後所定の方法により現像処理を行ないコンタクトホ
ール形成用のフォトレジストパターン４′を形成する（
第１図Ｂ）。Thereafter, a development process is performed using a predetermined method to form a photoresist pattern 4' for forming contact holes (
Figure 1 B).
次にフォトレジストパターン４′をマスクとして第１の
膜３および絶縁膜２をエツチングしコンタクトホールパ
ターン６を形成する（第１図Ｃ）。Next, using the photoresist pattern 4' as a mask, the first film 3 and the insulating film 2 are etched to form a contact hole pattern 6 (FIG. 1C).
以上述べた方法で行なうことによりフオドレジストに達
した光は下地膜の影響を受けず有効に利用され露光時間
の短縮をはかることができる。By carrying out the method described above, the light that reaches the photoresist is not affected by the underlying film and is effectively used, making it possible to shorten the exposure time.
発明の効果
以上述べたように本発明の方法を用いることにより、微
小面積の開口バターンの形成において下地の差に関係な
く露光時間の短縮をはかることによりスループツトの向
上をはかることができその工業的価値は大きい。Effects of the Invention As described above, by using the method of the present invention, it is possible to improve throughput by shortening the exposure time in forming an opening pattern of a minute area regardless of the difference in the underlying material. Great value.
第１図Ａ−Ｃは本発明の一実施例方法を用いてパターン
形成を行なう場合の工程断面図、第２図Ａ、Ｂは従来の
方法によりパターン形成を行なう場合の工程断面図であ
る。
１・・・・・・基板、２・・・・・・絶縁膜、３・・・
・・・第１の膜、４・・・・・感光性樹脂、６・・・・
・・コンタクトホールパターン、５・・・・・・マスク
。FIGS. 1A to 1C are cross-sectional views of a process in which a pattern is formed using a method according to an embodiment of the present invention, and FIGS. 2A and 2B are cross-sectional views of a process in which a pattern is formed by a conventional method. 1...Substrate, 2...Insulating film, 3...
...First film, 4...Photosensitive resin, 6...
...Contact hole pattern, 5...Mask.
Claims (2)
率を有する第１の膜を形成する工程と、所定の方法によ
り微小開口面積の放射線感応性樹脂膜パターンを形成す
る工程と、前記放射線感応性樹脂膜パターンをマスクと
して前記第１の膜および被エッチング膜をエッチングす
る工程よりなる微小開口パターン形成方法。(1) a step of forming a first film having a high reflectance on the main surface of the substrate on which the film to be etched is formed, and a step of forming a radiation-sensitive resin film pattern with a minute opening area by a predetermined method; A method for forming a micro-opening pattern, comprising the step of etching the first film and the film to be etched using the radiation-sensitive resin film pattern as a mask.
能なものである特許請求の範囲第１項記載の微小開口パ
ターン形成方法。(2) The method for forming a micro-opening pattern according to claim 1, wherein the first film can be etched simultaneously with the film to be etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29940486A JPS63151023A (en) | 1986-12-16 | 1986-12-16 | Formation of minute opening pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29940486A JPS63151023A (en) | 1986-12-16 | 1986-12-16 | Formation of minute opening pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63151023A true JPS63151023A (en) | 1988-06-23 |
Family
ID=17872119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29940486A Pending JPS63151023A (en) | 1986-12-16 | 1986-12-16 | Formation of minute opening pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63151023A (en) |
-
1986
- 1986-12-16 JP JP29940486A patent/JPS63151023A/en active Pending
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