JPS63144200A - ＩｎＰの結晶成長法 - Google Patents

ＩｎＰの結晶成長法

Info

Publication number
JPS63144200A
JPS63144200A JP28741286A JP28741286A JPS63144200A JP S63144200 A JPS63144200 A JP S63144200A JP 28741286 A JP28741286 A JP 28741286A JP 28741286 A JP28741286 A JP 28741286A JP S63144200 A JPS63144200 A JP S63144200A
Authority
JP
Japan
Prior art keywords
vapor pressure
growth
crystal
inp
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28741286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357077B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Yasuo Okuno
奥野　保男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP28741286A priority Critical patent/JPS63144200A/ja
Publication of JPS63144200A publication Critical patent/JPS63144200A/ja
Publication of JPH0357077B2 publication Critical patent/JPH0357077B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP28741286A 1986-12-02 1986-12-02 ＩｎＰの結晶成長法 Granted JPS63144200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28741286A JPS63144200A (ja) 1986-12-02 1986-12-02 ＩｎＰの結晶成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28741286A JPS63144200A (ja) 1986-12-02 1986-12-02 ＩｎＰの結晶成長法

Publications (2)

Publication Number Publication Date
JPS63144200A true JPS63144200A (ja) 1988-06-16
JPH0357077B2 JPH0357077B2 (enExample) 1991-08-30

Family

ID=17716993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28741286A Granted JPS63144200A (ja) 1986-12-02 1986-12-02 ＩｎＰの結晶成長法

Country Status (1)

Country Link
JP (1) JPS63144200A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326280A (en) * 1976-08-24 1978-03-10 Handotai Kenkyu Shinkokai Crystal growth for mixed crystals of compund semiconductor
JPS5523458A (en) * 1978-08-08 1980-02-19 Iseki & Co Ltd Measuring instrument for percentage of water content of circulation type grain drier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326280A (en) * 1976-08-24 1978-03-10 Handotai Kenkyu Shinkokai Crystal growth for mixed crystals of compund semiconductor
JPS5523458A (en) * 1978-08-08 1980-02-19 Iseki & Co Ltd Measuring instrument for percentage of water content of circulation type grain drier

Also Published As

Publication number Publication date
JPH0357077B2 (enExample) 1991-08-30

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