JPH058857B2 - - Google Patents

Info

Publication number
JPH058857B2
JPH058857B2 JP6417785A JP6417785A JPH058857B2 JP H058857 B2 JPH058857 B2 JP H058857B2 JP 6417785 A JP6417785 A JP 6417785A JP 6417785 A JP6417785 A JP 6417785A JP H058857 B2 JPH058857 B2 JP H058857B2
Authority
JP
Japan
Prior art keywords
crystal
atomic fraction
melt
epitaxial
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6417785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61222222A (ja
Inventor
Masayoshi Umeno
Sadao Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP6417785A priority Critical patent/JPS61222222A/ja
Publication of JPS61222222A publication Critical patent/JPS61222222A/ja
Publication of JPH058857B2 publication Critical patent/JPH058857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP6417785A 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶 Granted JPS61222222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6417785A JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6417785A JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Publications (2)

Publication Number Publication Date
JPS61222222A JPS61222222A (ja) 1986-10-02
JPH058857B2 true JPH058857B2 (enExample) 1993-02-03

Family

ID=13250518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6417785A Granted JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Country Status (1)

Country Link
JP (1) JPS61222222A (enExample)

Also Published As

Publication number Publication date
JPS61222222A (ja) 1986-10-02

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