JPS61222222A - Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶 - Google Patents

Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Info

Publication number
JPS61222222A
JPS61222222A JP6417785A JP6417785A JPS61222222A JP S61222222 A JPS61222222 A JP S61222222A JP 6417785 A JP6417785 A JP 6417785A JP 6417785 A JP6417785 A JP 6417785A JP S61222222 A JPS61222222 A JP S61222222A
Authority
JP
Japan
Prior art keywords
crystal
melt
content
substrate
atomic fraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6417785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058857B2 (enExample
Inventor
Masayoshi Umeno
正義 梅野
Sadao Fujii
貞男 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP6417785A priority Critical patent/JPS61222222A/ja
Publication of JPS61222222A publication Critical patent/JPS61222222A/ja
Publication of JPH058857B2 publication Critical patent/JPH058857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP6417785A 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶 Granted JPS61222222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6417785A JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6417785A JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Publications (2)

Publication Number Publication Date
JPS61222222A true JPS61222222A (ja) 1986-10-02
JPH058857B2 JPH058857B2 (enExample) 1993-02-03

Family

ID=13250518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6417785A Granted JPS61222222A (ja) 1985-03-28 1985-03-28 Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶

Country Status (1)

Country Link
JP (1) JPS61222222A (enExample)

Also Published As

Publication number Publication date
JPH058857B2 (enExample) 1993-02-03

Similar Documents

Publication Publication Date Title
DE69738008T2 (de) Halbleiterbauelement
Quillec et al. In x Ga1− x As y P1− y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
Hellman et al. Epitaxial Growth and Orientation of GaN on (1 0 0) g-LiAlO2
Gao et al. High quality InAs grown by liquid phase epitaxy using gadolinium gettering
Ellis et al. Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agent
JPS5856963B2 (ja) 電子発光化合物半導体の製造方法
Tu et al. Lattice‐matched single‐crystalline dielectric films (Ba x Sr1− x F2) on InP (001) grown by molecular‐beam epitaxy
Wu et al. Erbium doping in InGaAsP grown by liquid‐phase epitaxy
JPS61222222A (ja) Ｇａ含量の大きいＩｎ↓ｘＧａ↓１−↓ｘＡｓ↓ｙＰ↓１−↓ｙ結晶
US4592791A (en) Liquid phase epitaxial growth method for producing a III-V group compound semiconductor
Das et al. Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime
Mao et al. Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
JP2009234824A (ja) 自立Ｍｇ含有ＺｎＯ系混晶単結晶ウエファーおよびそれに用いるＭｇ含有ＺｎＯ系混晶単結晶の製造方法
WO2009119411A1 (ja) ＺｎＯ単結晶の製造方法、それによって得られた自立ＺｎＯ単結晶ウエファー、並びに自立Ｍｇ含有ＺｎＯ系混晶単結晶ウエファーおよびそれに用いるＭｇ含有ＺｎＯ系混晶単結晶の製造方法
Singh et al. Growth of InGaN films by MBE at the growth temperature of GaN
Arustamyan et al. Quinary InAlGaPAs/GaAs solid solutions grown by temperature gradient zone melting
JPS61116830A (ja) Ｇａ含量の大きいＩｎ↓ｘＧａ↓１↓−↓ｘＡｓ↓ｙＰ↓１↓−↓ｙ混晶を液相エピタキシヤル成長させる方法
US4609411A (en) Liquid-phase epitaxial growth method of a IIIb-Vb group compound
JPH0463040B2 (enExample)
Torres‐Delgado et al. Low temperature photoluminescence study in Al x Ga1− x As alloys in the indirect band gap region (x≳ 0.4)
Jiang et al. Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
JP3458413B2 (ja) 結晶成長方法
Inoue TriPyramid Growth of Epitaxial Silicon
Shang et al. Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
Xu et al. Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates