JPS6313960B2 - - Google Patents

Info

Publication number
JPS6313960B2
JPS6313960B2 JP60065504A JP6550485A JPS6313960B2 JP S6313960 B2 JPS6313960 B2 JP S6313960B2 JP 60065504 A JP60065504 A JP 60065504A JP 6550485 A JP6550485 A JP 6550485A JP S6313960 B2 JPS6313960 B2 JP S6313960B2
Authority
JP
Japan
Prior art keywords
melt
single crystal
concentration
gaas
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60065504A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61222991A (ja
Inventor
Tooru Takahashi
Shinichi Takahashi
Masateru Takaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP60065504A priority Critical patent/JPS61222991A/ja
Publication of JPS61222991A publication Critical patent/JPS61222991A/ja
Publication of JPS6313960B2 publication Critical patent/JPS6313960B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60065504A 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法 Granted JPS61222991A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60065504A JPS61222991A (ja) 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60065504A JPS61222991A (ja) 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20202289A Division JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Publications (2)

Publication Number Publication Date
JPS61222991A JPS61222991A (ja) 1986-10-03
JPS6313960B2 true JPS6313960B2 (en:Method) 1988-03-28

Family

ID=13288966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60065504A Granted JPS61222991A (ja) 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS61222991A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61261297A (ja) * 1985-05-14 1986-11-19 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118771A (en) * 1977-03-26 1978-10-17 Omron Tateisi Electronics Co Method of producing photoelectric detector
JPS5525459Y2 (en:Method) * 1977-07-29 1980-06-19

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF CRYSTAL GROWTH=1986 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1970 *
SOVIET PHYSICS SEMECONDUCTORS=1975 *

Also Published As

Publication number Publication date
JPS61222991A (ja) 1986-10-03

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