JPH0476355B2 - - Google Patents

Info

Publication number
JPH0476355B2
JPH0476355B2 JP63042506A JP4250688A JPH0476355B2 JP H0476355 B2 JPH0476355 B2 JP H0476355B2 JP 63042506 A JP63042506 A JP 63042506A JP 4250688 A JP4250688 A JP 4250688A JP H0476355 B2 JPH0476355 B2 JP H0476355B2
Authority
JP
Japan
Prior art keywords
concentration
crystal
gaas
semi
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63042506A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01215799A (ja
Inventor
Hiromasa Yamamoto
Manabu Kano
Osamu Oda
Original Assignee
Nippon Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co filed Critical Nippon Mining Co
Priority to JP4250688A priority Critical patent/JPH01215799A/ja
Publication of JPH01215799A publication Critical patent/JPH01215799A/ja
Publication of JPH0476355B2 publication Critical patent/JPH0476355B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4250688A 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 Granted JPH01215799A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4250688A JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4250688A JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Publications (2)

Publication Number Publication Date
JPH01215799A JPH01215799A (ja) 1989-08-29
JPH0476355B2 true JPH0476355B2 (en:Method) 1992-12-03

Family

ID=12637950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4250688A Granted JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Country Status (1)

Country Link
JP (1) JPH01215799A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239089A (ja) * 1987-11-30 1989-09-25 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
JPH08758B2 (ja) * 1988-09-08 1996-01-10 日立電線株式会社 クロムドープ半絶縁性ガリウム・ヒ素単結晶の製造方法
JP4691909B2 (ja) * 2004-06-09 2011-06-01 住友電気工業株式会社 半導体結晶の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0788277B2 (ja) * 1987-02-13 1995-09-27 住友電気工業株式会社 半絶縁性ガリウム砒素単結晶

Also Published As

Publication number Publication date
JPH01215799A (ja) 1989-08-29

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Legal Events

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