JPH0517196B2 - - Google Patents

Info

Publication number
JPH0517196B2
JPH0517196B2 JP20202289A JP20202289A JPH0517196B2 JP H0517196 B2 JPH0517196 B2 JP H0517196B2 JP 20202289 A JP20202289 A JP 20202289A JP 20202289 A JP20202289 A JP 20202289A JP H0517196 B2 JPH0517196 B2 JP H0517196B2
Authority
JP
Japan
Prior art keywords
concentration
melt
seed crystal
crystal
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20202289A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03159998A (ja
Inventor
Tooru Takahashi
Shinichi Takahashi
Masateru Takaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP20202289A priority Critical patent/JPH03159998A/ja
Publication of JPH03159998A publication Critical patent/JPH03159998A/ja
Publication of JPH0517196B2 publication Critical patent/JPH0517196B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP20202289A 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶 Granted JPH03159998A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20202289A JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20202289A JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP60065504A Division JPS61222991A (ja) 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH03159998A JPH03159998A (ja) 1991-07-09
JPH0517196B2 true JPH0517196B2 (en:Method) 1993-03-08

Family

ID=16450628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20202289A Granted JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Country Status (1)

Country Link
JP (1) JPH03159998A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3674736B2 (ja) * 1997-04-28 2005-07-20 同和鉱業株式会社 板状単結晶の製造方法
EP0979883A4 (en) * 1997-12-25 2003-10-15 Japan Energy Corp METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS AND SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS

Also Published As

Publication number Publication date
JPH03159998A (ja) 1991-07-09

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