JPS63134555U - - Google Patents

Info

Publication number
JPS63134555U
JPS63134555U JP2593387U JP2593387U JPS63134555U JP S63134555 U JPS63134555 U JP S63134555U JP 2593387 U JP2593387 U JP 2593387U JP 2593387 U JP2593387 U JP 2593387U JP S63134555 U JPS63134555 U JP S63134555U
Authority
JP
Japan
Prior art keywords
region
doped
semiconductor region
heterojunction
dimensional electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2593387U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2593387U priority Critical patent/JPS63134555U/ja
Publication of JPS63134555U publication Critical patent/JPS63134555U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2593387U 1987-02-24 1987-02-24 Pending JPS63134555U (OSRAM)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2593387U JPS63134555U (OSRAM) 1987-02-24 1987-02-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2593387U JPS63134555U (OSRAM) 1987-02-24 1987-02-24

Publications (1)

Publication Number Publication Date
JPS63134555U true JPS63134555U (OSRAM) 1988-09-02

Family

ID=30826544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2593387U Pending JPS63134555U (OSRAM) 1987-02-24 1987-02-24

Country Status (1)

Country Link
JP (1) JPS63134555U (OSRAM)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593977A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 半導体装置
JPS61191074A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体装置
JPS6254474A (ja) * 1985-05-20 1987-03-10 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPS62189751A (ja) * 1986-02-17 1987-08-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593977A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 半導体装置
JPS61191074A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体装置
JPS6254474A (ja) * 1985-05-20 1987-03-10 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPS62189751A (ja) * 1986-02-17 1987-08-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JPS63188964U (OSRAM)
EP0999595A3 (en) Semiconductor device and manufacturing method therefor
CA2039415A1 (en) Buried channel heterojunction field effect transistor
JPS62196360U (OSRAM)
JPS63134555U (OSRAM)
JP2855775B2 (ja) 電界効果トランジスタ
JPH01202870A (ja) 電界効果トランジスタ
JPS6461068A (en) Field-effect transistor
JPH084140B2 (ja) 電界効果トランジスタ
JP2921835B2 (ja) ヘテロ接合型電界効果トランジスタ
JPH0361333U (OSRAM)
JPS6330788B2 (OSRAM)
KR970063777A (ko) 고농도로 도핑된 반도체 및 그의 제조방법
JPS61161761A (ja) 半導体装置
JPS6211279A (ja) 電界効果トランジスタ
JPS61234569A (ja) 電界効果トランジスタ
JPS6312856U (OSRAM)
JP2600755B2 (ja) 半導体装置
JPS63245960A (ja) 電界効果半導体装置
JPH01207979A (ja) 化合物半導体装置
JPH04280640A (ja) 電界効果トランジスタ及びその製造方法
JPH01302771A (ja) 電界効果トランジスタ
JPH0156544B2 (OSRAM)
JPS63184369A (ja) 電界効果トランジスタ
JPH04101436A (ja) 電界効果トランジスタ