JPS63134555U - - Google Patents
Info
- Publication number
- JPS63134555U JPS63134555U JP2593387U JP2593387U JPS63134555U JP S63134555 U JPS63134555 U JP S63134555U JP 2593387 U JP2593387 U JP 2593387U JP 2593387 U JP2593387 U JP 2593387U JP S63134555 U JPS63134555 U JP S63134555U
- Authority
- JP
- Japan
- Prior art keywords
- region
- doped
- semiconductor region
- heterojunction
- dimensional electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第1図a,bはこの考案のヘテロ接合素子の伝
導帯バンド構造を示す図およびそのドーピング濃
度を示す図、第2図は従来のヘテロ接合FETの
構造を示す断面図、第3図a,bは従来のヘテロ
接合FETの伝導帯バンド構造を示す図およびそ
のドーピング濃度を示す図である。
図において、1はシヨツトキゲート金属領域、
4a,4bはAlxGa1―xAs領域、5はノ
ンドープGaAs領域、6は2次元電子領域であ
る。なお、各図中の同一符号は同一または相当部
分を示す。
Figures 1a and 1b are diagrams showing the conduction band structure and doping concentration of the heterojunction device of this invention, Figure 2 is a sectional view showing the structure of a conventional heterojunction FET, Figures 3a, b is a diagram showing the conduction band structure of a conventional heterojunction FET and its doping concentration. In the figure, 1 is a shot gate metal region;
4a and 4b are Al x Ga 1 - x As regions, 5 is a non-doped GaAs region, and 6 is a two-dimensional electron region. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
半導体領域よりもバンドギヤツプが大きく、シヨ
ツトキゲート金属が形成されるとともに、不純物
がドーピングされた半導体領域とからなるヘテロ
接合を有し、このヘテロ接合界面に2次元電子領
域が形成されたヘテロ接合素子において、前記不
純物がドーピングされたバンドギヤツプの大きな
半導体領域を、前記2次元電子領域近傍の領域以
外でドーピング濃度を低く構成したことを特徴と
するヘテロ接合素子。 It has a heterojunction consisting of a non-doped semiconductor region and a semiconductor region with a larger bandgap than the non-doped semiconductor region, where a shot gate metal is formed and which is doped with impurities, and a two-dimensional electron region is formed at the interface of this heterojunction. A heterojunction element in which a semiconductor region doped with the impurity and having a large band gap is configured to have a low doping concentration in a region other than a region near the two-dimensional electron region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2593387U JPS63134555U (en) | 1987-02-24 | 1987-02-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2593387U JPS63134555U (en) | 1987-02-24 | 1987-02-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63134555U true JPS63134555U (en) | 1988-09-02 |
Family
ID=30826544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2593387U Pending JPS63134555U (en) | 1987-02-24 | 1987-02-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63134555U (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593977A (en) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | Semiconductor device |
JPS61191074A (en) * | 1985-02-20 | 1986-08-25 | Fujitsu Ltd | Semiconductor device |
JPS6254474A (en) * | 1985-05-20 | 1987-03-10 | Sumitomo Electric Ind Ltd | Field effect transistor |
JPS62189751A (en) * | 1986-02-17 | 1987-08-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-02-24 JP JP2593387U patent/JPS63134555U/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593977A (en) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | Semiconductor device |
JPS61191074A (en) * | 1985-02-20 | 1986-08-25 | Fujitsu Ltd | Semiconductor device |
JPS6254474A (en) * | 1985-05-20 | 1987-03-10 | Sumitomo Electric Ind Ltd | Field effect transistor |
JPS62189751A (en) * | 1986-02-17 | 1987-08-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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