JPS6313352B2 - - Google Patents
Info
- Publication number
- JPS6313352B2 JPS6313352B2 JP16538379A JP16538379A JPS6313352B2 JP S6313352 B2 JPS6313352 B2 JP S6313352B2 JP 16538379 A JP16538379 A JP 16538379A JP 16538379 A JP16538379 A JP 16538379A JP S6313352 B2 JPS6313352 B2 JP S6313352B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- source
- metal electrode
- region
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16538379A JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16538379A JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688362A JPS5688362A (en) | 1981-07-17 |
| JPS6313352B2 true JPS6313352B2 (US20020051482A1-20020502-M00020.png) | 1988-03-25 |
Family
ID=15811336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16538379A Granted JPS5688362A (en) | 1979-12-19 | 1979-12-19 | Vertical type power mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688362A (US20020051482A1-20020502-M00020.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
| US4801986A (en) * | 1987-04-03 | 1989-01-31 | General Electric Company | Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
| JPH0834312B2 (ja) * | 1988-12-06 | 1996-03-29 | 富士電機株式会社 | 縦形電界効果トランジスタ |
| JP3150443B2 (ja) * | 1992-09-10 | 2001-03-26 | 株式会社東芝 | 半導体装置 |
-
1979
- 1979-12-19 JP JP16538379A patent/JPS5688362A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5688362A (en) | 1981-07-17 |
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