JPS63131125U - - Google Patents
Info
- Publication number
- JPS63131125U JPS63131125U JP2316087U JP2316087U JPS63131125U JP S63131125 U JPS63131125 U JP S63131125U JP 2316087 U JP2316087 U JP 2316087U JP 2316087 U JP2316087 U JP 2316087U JP S63131125 U JPS63131125 U JP S63131125U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- furnace tube
- quartz
- diffusion furnace
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000002485 combustion reaction Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Description
第１図は本考案の一実施例の要部の概略を示す
断面図である。 １……炉芯管、２……ヒーター、３……水素ノ
ズル、４……酸素ノズル、５……燃焼部、６……
反応部、７……断熱キヤツプ、８……半導体基板
。
断面図である。 １……炉芯管、２……ヒーター、３……水素ノ
ズル、４……酸素ノズル、５……燃焼部、６……
反応部、７……断熱キヤツプ、８……半導体基板
。
Claims (1)
- 半導体基板に熱酸化処理を行う石英炉芯管を有
する拡散炉装置において、前記石英炉芯管内の水
素燃焼部と半導体基板の位置する反応部との間に
断熱材を入れた事を特徴とする拡散炉装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2316087U JPS63131125U (ja) | 1987-02-18 | 1987-02-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2316087U JPS63131125U (ja) | 1987-02-18 | 1987-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63131125U true JPS63131125U (ja) | 1988-08-26 |
Family
ID=30821204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2316087U Pending JPS63131125U (ja) | 1987-02-18 | 1987-02-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131125U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031515A (ja) * | 2001-07-12 | 2003-01-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
-
1987
- 1987-02-18 JP JP2316087U patent/JPS63131125U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031515A (ja) * | 2001-07-12 | 2003-01-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| JP4509433B2 (ja) * | 2001-07-12 | 2010-07-21 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |