JPS63128634A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63128634A JPS63128634A JP61275912A JP27591286A JPS63128634A JP S63128634 A JPS63128634 A JP S63128634A JP 61275912 A JP61275912 A JP 61275912A JP 27591286 A JP27591286 A JP 27591286A JP S63128634 A JPS63128634 A JP S63128634A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- pad
- semiconductor device
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H10W72/90—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H10W72/015—
-
- H10W72/01515—
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- H10W72/075—
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- H10W72/07532—
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- H10W72/07533—
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- H10W72/07551—
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- H10W72/50—
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- H10W72/5363—
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- H10W72/5522—
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- H10W72/5524—
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- H10W72/5525—
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- H10W72/59—
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- H10W72/952—
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- H10W72/983—
Landscapes
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275912A JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275912A JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63128634A true JPS63128634A (ja) | 1988-06-01 |
| JPH0546978B2 JPH0546978B2 (enExample) | 1993-07-15 |
Family
ID=17562157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61275912A Granted JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63128634A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472304B2 (en) * | 1999-01-23 | 2002-10-29 | Agere Systems Inc. | Wire bonding to copper |
| US20120032354A1 (en) * | 2010-08-06 | 2012-02-09 | National Semiconductor Corporation | Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds |
| EP2444999A4 (en) * | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | SEMICONDUCTOR DEVICE |
| JP2017011176A (ja) * | 2015-06-24 | 2017-01-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116634A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
| JPS56162844A (en) * | 1980-05-19 | 1981-12-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS59150460A (ja) * | 1983-01-31 | 1984-08-28 | Toshiba Corp | 半導体装置の製造方法 |
-
1986
- 1986-11-18 JP JP61275912A patent/JPS63128634A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116634A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
| JPS56162844A (en) * | 1980-05-19 | 1981-12-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS59150460A (ja) * | 1983-01-31 | 1984-08-28 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472304B2 (en) * | 1999-01-23 | 2002-10-29 | Agere Systems Inc. | Wire bonding to copper |
| EP2444999A4 (en) * | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | SEMICONDUCTOR DEVICE |
| US9780069B2 (en) | 2009-06-18 | 2017-10-03 | Rohm Co., Ltd. | Semiconductor device |
| US10163850B2 (en) | 2009-06-18 | 2018-12-25 | Rohm Co., Ltd. | Semiconductor device |
| US20120032354A1 (en) * | 2010-08-06 | 2012-02-09 | National Semiconductor Corporation | Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds |
| JP2017011176A (ja) * | 2015-06-24 | 2017-01-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546978B2 (enExample) | 1993-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |