JPS63122218A - 微細パタ−ン検査方法 - Google Patents

微細パタ−ン検査方法

Info

Publication number
JPS63122218A
JPS63122218A JP61268935A JP26893586A JPS63122218A JP S63122218 A JPS63122218 A JP S63122218A JP 61268935 A JP61268935 A JP 61268935A JP 26893586 A JP26893586 A JP 26893586A JP S63122218 A JPS63122218 A JP S63122218A
Authority
JP
Japan
Prior art keywords
stored
pattern
data
signals
buffer memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61268935A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0545947B2 (enrdf_load_stackoverflow
Inventor
Kaoru Nakamura
薫 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP61268935A priority Critical patent/JPS63122218A/ja
Publication of JPS63122218A publication Critical patent/JPS63122218A/ja
Publication of JPH0545947B2 publication Critical patent/JPH0545947B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP61268935A 1986-11-12 1986-11-12 微細パタ−ン検査方法 Granted JPS63122218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61268935A JPS63122218A (ja) 1986-11-12 1986-11-12 微細パタ−ン検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61268935A JPS63122218A (ja) 1986-11-12 1986-11-12 微細パタ−ン検査方法

Publications (2)

Publication Number Publication Date
JPS63122218A true JPS63122218A (ja) 1988-05-26
JPH0545947B2 JPH0545947B2 (enrdf_load_stackoverflow) 1993-07-12

Family

ID=17465326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61268935A Granted JPS63122218A (ja) 1986-11-12 1986-11-12 微細パタ−ン検査方法

Country Status (1)

Country Link
JP (1) JPS63122218A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011055004A (ja) * 2010-12-03 2011-03-17 Hitachi High-Technologies Corp 回路パターン検査方法、及び回路パターン検査システム
JP2014182064A (ja) * 2013-03-21 2014-09-29 Ebara Corp 検査用表示装置、欠陥判別方法、検査用表示プログラム
JP2016126302A (ja) * 2015-01-08 2016-07-11 株式会社ニューフレアテクノロジー 検査装置および検査方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7796804B2 (en) * 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011055004A (ja) * 2010-12-03 2011-03-17 Hitachi High-Technologies Corp 回路パターン検査方法、及び回路パターン検査システム
JP2014182064A (ja) * 2013-03-21 2014-09-29 Ebara Corp 検査用表示装置、欠陥判別方法、検査用表示プログラム
JP2016126302A (ja) * 2015-01-08 2016-07-11 株式会社ニューフレアテクノロジー 検査装置および検査方法

Also Published As

Publication number Publication date
JPH0545947B2 (enrdf_load_stackoverflow) 1993-07-12

Similar Documents

Publication Publication Date Title
JP3566470B2 (ja) パターン検査方法及びその装置
US6297879B1 (en) Inspection method and apparatus for detecting defects on photomasks
US6735745B2 (en) Method and system for detecting defects
JPH09312318A (ja) パタ−ン欠陥検査装置
US4794646A (en) Charged beam pattern defect inspection apparatus
US6397165B1 (en) Microscopic corner radius measurement system
KR960013357B1 (ko) 화상데이타 검사방법 및 장치
KR970000781B1 (ko) 이물 검사 장치
JP5401005B2 (ja) テンプレートマッチング方法、および走査電子顕微鏡
JPS63122218A (ja) 微細パタ−ン検査方法
JP3332096B2 (ja) 欠陥検査方法および装置
JP3413110B2 (ja) パターン検査装置、パターン検査方法およびパターン検査プログラムを格納した記録媒体
JPS63122217A (ja) 微細パタ−ン検査方法
JP3317030B2 (ja) 寸法測定装置
JPH0416707A (ja) 電子ビームによるパターン認識方法
JP3055323B2 (ja) 円形容器内面検査装置
JP2965370B2 (ja) 欠陥検出装置
JP3517100B2 (ja) パターン検査装置及びパターン検査方法
JP3099451B2 (ja) 異物検査装置
JP3391163B2 (ja) 円形容器内面検査装置
JPH03235949A (ja) マスク検査方法
JPH1195410A (ja) フォトマスクの欠陥検査方法および欠陥検査装置
JP2002008972A (ja) 電子線露光装置及びその電子線露光方法
JPH06347418A (ja) レーザ走査装置および画像形成方法
JPS61200415A (ja) 微細パタ−ン検査装置