JPS6292459A - 半導体容量結合素子 - Google Patents

半導体容量結合素子

Info

Publication number
JPS6292459A
JPS6292459A JP60233826A JP23382685A JPS6292459A JP S6292459 A JPS6292459 A JP S6292459A JP 60233826 A JP60233826 A JP 60233826A JP 23382685 A JP23382685 A JP 23382685A JP S6292459 A JPS6292459 A JP S6292459A
Authority
JP
Japan
Prior art keywords
region
electrode
resistor
junction
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60233826A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453104B2 (enrdf_load_stackoverflow
Inventor
Fumio Santo
山藤　文雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60233826A priority Critical patent/JPS6292459A/ja
Publication of JPS6292459A publication Critical patent/JPS6292459A/ja
Publication of JPH0453104B2 publication Critical patent/JPH0453104B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60233826A 1985-10-18 1985-10-18 半導体容量結合素子 Granted JPS6292459A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60233826A JPS6292459A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60233826A JPS6292459A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Publications (2)

Publication Number Publication Date
JPS6292459A true JPS6292459A (ja) 1987-04-27
JPH0453104B2 JPH0453104B2 (enrdf_load_stackoverflow) 1992-08-25

Family

ID=16961167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60233826A Granted JPS6292459A (ja) 1985-10-18 1985-10-18 半導体容量結合素子

Country Status (1)

Country Link
JP (1) JPS6292459A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124761A (en) * 1988-01-22 1992-06-23 Sony Corporation Semiconductor apparatus
US5360989A (en) * 1990-06-18 1994-11-01 Kabushiki Kaisha Toshiba MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions
JP2711023B2 (ja) * 1993-03-03 1998-02-10 カリフォルニア マイクロ ディヴァイシズ コーポレイション 集積ｒｃ回路網とショットキーダイオードを有する半導体デバイス
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124761A (en) * 1988-01-22 1992-06-23 Sony Corporation Semiconductor apparatus
US5360989A (en) * 1990-06-18 1994-11-01 Kabushiki Kaisha Toshiba MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions
JP2711023B2 (ja) * 1993-03-03 1998-02-10 カリフォルニア マイクロ ディヴァイシズ コーポレイション 集積ｒｃ回路網とショットキーダイオードを有する半導体デバイス
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPH0453104B2 (enrdf_load_stackoverflow) 1992-08-25

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