JPS629238B2 - - Google Patents

Info

Publication number
JPS629238B2
JPS629238B2 JP57010954A JP1095482A JPS629238B2 JP S629238 B2 JPS629238 B2 JP S629238B2 JP 57010954 A JP57010954 A JP 57010954A JP 1095482 A JP1095482 A JP 1095482A JP S629238 B2 JPS629238 B2 JP S629238B2
Authority
JP
Japan
Prior art keywords
film
layer
aluminum oxide
silicon substrate
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57010954A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58128775A (ja
Inventor
Hirotaka Nakano
Hiroshi Morita
Taketoshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57010954A priority Critical patent/JPS58128775A/ja
Priority to US06/459,586 priority patent/US4463216A/en
Publication of JPS58128775A publication Critical patent/JPS58128775A/ja
Publication of JPS629238B2 publication Critical patent/JPS629238B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57010954A 1982-01-28 1982-01-28 太陽電池の製造方法 Granted JPS58128775A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57010954A JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法
US06/459,586 US4463216A (en) 1982-01-28 1983-01-20 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57010954A JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS58128775A JPS58128775A (ja) 1983-08-01
JPS629238B2 true JPS629238B2 (cg-RX-API-DMAC7.html) 1987-02-27

Family

ID=11764579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57010954A Granted JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法

Country Status (2)

Country Link
US (1) US4463216A (cg-RX-API-DMAC7.html)
JP (1) JPS58128775A (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
EP0197034A1 (en) * 1984-10-16 1986-10-15 TODOROF, William J. Multi-layer thin film, flexible silicon alloy photovoltaic cell
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes
US4933021A (en) * 1988-11-14 1990-06-12 Electric Power Research Institute Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
US6278053B1 (en) 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
JP3910004B2 (ja) * 2000-07-10 2007-04-25 忠弘 大見 半導体シリコン単結晶ウエーハ
KR20020072736A (ko) * 2001-03-12 2002-09-18 (주)솔라사인 결정질 실리콘 태양전지
US7659475B2 (en) * 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
DE112006003617A5 (de) * 2005-11-02 2008-10-02 Centrotherm Photovoltaics Ag Antireflexbeschichtung auf Solarzellen, sowie Verfahren zum Herstellen einer solchen Antireflexbeschichtung
DE102007012277A1 (de) 2007-03-08 2008-09-11 Gebr. Schmid Gmbh & Co. Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
DE102007054384A1 (de) 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
US20090145478A1 (en) * 2007-12-07 2009-06-11 Sharp Kabushiki Kaisha Surface protective sheet for solar cell and solar cell module
KR101010286B1 (ko) * 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
DE102008055028A1 (de) * 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
KR101203623B1 (ko) * 2010-06-18 2012-11-21 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN102544124A (zh) * 2010-12-29 2012-07-04 清华大学 太阳能电池及其制备方法
DE102011077526A1 (de) * 2011-06-15 2012-12-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleitereinrichtung
US10770605B2 (en) * 2017-04-20 2020-09-08 King Abdulaziz University Photodiode with spinel oxide photoactive layer
CN111668318B (zh) * 2020-05-29 2021-09-24 晶科绿能(上海)管理有限公司 一种光伏组件、太阳能电池及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
US4055442A (en) * 1976-01-19 1977-10-25 Optical Coating Laboratory, Inc. Silicon solar cell construction having two layer anti-reflection coating
US4276137A (en) * 1979-07-23 1981-06-30 International Business Machines Corporation Control of surface recombination loss in solar cells

Also Published As

Publication number Publication date
JPS58128775A (ja) 1983-08-01
US4463216A (en) 1984-07-31

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