JPS58128775A - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法

Info

Publication number
JPS58128775A
JPS58128775A JP57010954A JP1095482A JPS58128775A JP S58128775 A JPS58128775 A JP S58128775A JP 57010954 A JP57010954 A JP 57010954A JP 1095482 A JP1095482 A JP 1095482A JP S58128775 A JPS58128775 A JP S58128775A
Authority
JP
Japan
Prior art keywords
layer
solar cell
substrate
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57010954A
Other languages
English (en)
Japanese (ja)
Other versions
JPS629238B2 (cg-RX-API-DMAC7.html
Inventor
Hirotaka Nakano
博隆 中野
Hiroshi Morita
廣 森田
Taketoshi Kato
加藤　健敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57010954A priority Critical patent/JPS58128775A/ja
Priority to US06/459,586 priority patent/US4463216A/en
Publication of JPS58128775A publication Critical patent/JPS58128775A/ja
Publication of JPS629238B2 publication Critical patent/JPS629238B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57010954A 1982-01-28 1982-01-28 太陽電池の製造方法 Granted JPS58128775A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57010954A JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法
US06/459,586 US4463216A (en) 1982-01-28 1983-01-20 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57010954A JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS58128775A true JPS58128775A (ja) 1983-08-01
JPS629238B2 JPS629238B2 (cg-RX-API-DMAC7.html) 1987-02-27

Family

ID=11764579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57010954A Granted JPS58128775A (ja) 1982-01-28 1982-01-28 太陽電池の製造方法

Country Status (2)

Country Link
US (1) US4463216A (cg-RX-API-DMAC7.html)
JP (1) JPS58128775A (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
EP0197034A1 (en) * 1984-10-16 1986-10-15 TODOROF, William J. Multi-layer thin film, flexible silicon alloy photovoltaic cell
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes
US4933021A (en) * 1988-11-14 1990-06-12 Electric Power Research Institute Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
US6278053B1 (en) 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
JP3910004B2 (ja) * 2000-07-10 2007-04-25 忠弘 大見 半導体シリコン単結晶ウエーハ
KR20020072736A (ko) * 2001-03-12 2002-09-18 (주)솔라사인 결정질 실리콘 태양전지
US7659475B2 (en) * 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
DE112006003617A5 (de) * 2005-11-02 2008-10-02 Centrotherm Photovoltaics Ag Antireflexbeschichtung auf Solarzellen, sowie Verfahren zum Herstellen einer solchen Antireflexbeschichtung
DE102007012277A1 (de) 2007-03-08 2008-09-11 Gebr. Schmid Gmbh & Co. Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
DE102007054384A1 (de) 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
US20090145478A1 (en) * 2007-12-07 2009-06-11 Sharp Kabushiki Kaisha Surface protective sheet for solar cell and solar cell module
KR101010286B1 (ko) * 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
DE102008055028A1 (de) * 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
KR101203623B1 (ko) * 2010-06-18 2012-11-21 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN102544124A (zh) * 2010-12-29 2012-07-04 清华大学 太阳能电池及其制备方法
DE102011077526A1 (de) * 2011-06-15 2012-12-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleitereinrichtung
US10770605B2 (en) * 2017-04-20 2020-09-08 King Abdulaziz University Photodiode with spinel oxide photoactive layer
CN111668318B (zh) * 2020-05-29 2021-09-24 晶科绿能(上海)管理有限公司 一种光伏组件、太阳能电池及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
US4055442A (en) * 1976-01-19 1977-10-25 Optical Coating Laboratory, Inc. Silicon solar cell construction having two layer anti-reflection coating
US4276137A (en) * 1979-07-23 1981-06-30 International Business Machines Corporation Control of surface recombination loss in solar cells

Also Published As

Publication number Publication date
JPS629238B2 (cg-RX-API-DMAC7.html) 1987-02-27
US4463216A (en) 1984-07-31

Similar Documents

Publication Publication Date Title
JPS58128775A (ja) 太陽電池の製造方法
JP2974485B2 (ja) 光起電力素子の製造法
US4127738A (en) Photovoltaic device containing an organic layer
US4162505A (en) Inverted amorphous silicon solar cell utilizing cermet layers
JP3308785B2 (ja) 光起電力素子
JPS6228598B2 (cg-RX-API-DMAC7.html)
JPS60208813A (ja) 光電変換装置とその製造方法
CN104993059B (zh) 一种硅基钙钛矿异质结太阳电池及其制备方法
JPS61100979A (ja) 薄膜太陽電池の製造方法
EP0849810A2 (en) Method for producing photovoltaic element
CN108878570B (zh) 空穴选择型MoOx/SiOx(Mo)/n-Si异质结、太阳电池器件及其制备方法
JPH05504235A (ja) アモルフアス・ゲルマニウムをベースとする光劣化安定性半導体材料とその製造方法
CN209087911U (zh) 一种钙钛矿/晶硅叠层太阳能电池
JPS5914682A (ja) アモルフアスシリコン太陽電池
JP3510443B2 (ja) 光起電力装置の製造方法
US4246043A (en) Yttrium oxide antireflective coating for solar cells
US2997409A (en) Method of production of lead selenide photodetector cells
US4347263A (en) Method of applying an antireflective and/or dielectric coating
JPH0473305B2 (cg-RX-API-DMAC7.html)
GB1593898A (en) Photovoltaic device
JPS5823486A (ja) 太陽電池の製造方法
JPS62104081A (ja) 反射防止膜の製造方法
JPS5935016A (ja) 含水素シリコン層の製造方法
JPS5943101B2 (ja) 非晶質半導体太陽電池
CN108258121A (zh) 有机无机复合自驱动光电探测器及其制备方法