JPS6292360A - 相補型半導体装置 - Google Patents

相補型半導体装置

Info

Publication number
JPS6292360A
JPS6292360A JP60232252A JP23225285A JPS6292360A JP S6292360 A JPS6292360 A JP S6292360A JP 60232252 A JP60232252 A JP 60232252A JP 23225285 A JP23225285 A JP 23225285A JP S6292360 A JPS6292360 A JP S6292360A
Authority
JP
Japan
Prior art keywords
gate
gate electrode
region
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60232252A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346980B2 (enrdf_load_stackoverflow
Inventor
Hisayo Sasaki
佐々木　寿代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60232252A priority Critical patent/JPS6292360A/ja
Publication of JPS6292360A publication Critical patent/JPS6292360A/ja
Publication of JPH0346980B2 publication Critical patent/JPH0346980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60232252A 1985-10-17 1985-10-17 相補型半導体装置 Granted JPS6292360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60232252A JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60232252A JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Publications (2)

Publication Number Publication Date
JPS6292360A true JPS6292360A (ja) 1987-04-27
JPH0346980B2 JPH0346980B2 (enrdf_load_stackoverflow) 1991-07-17

Family

ID=16936357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60232252A Granted JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Country Status (1)

Country Link
JP (1) JPS6292360A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0716455A3 (en) * 1994-12-09 1996-08-28 At & T Corp Double grid manufacturing
US5846871A (en) * 1997-08-26 1998-12-08 Lucent Technologies Inc. Integrated circuit fabrication
KR19990068006A (ko) * 1998-01-20 1999-08-25 루센트 테크놀러지스 인크 금속 산화물 반도체내에 사용되는 적층 스택 및 그 제조 방법과, 상보형 금속 산화물 반도체 소자
KR100591344B1 (ko) * 1996-06-24 2007-11-12 소니 가부시끼 가이샤 반도체장치의제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10005905B2 (en) * 2011-01-14 2018-06-26 Toray Industries, Inc. Molding material, prepreg, fiber-reinforced composite material, fiber-reinforced composite material laminate, and process for production of fiber-reinforced molding base material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0716455A3 (en) * 1994-12-09 1996-08-28 At & T Corp Double grid manufacturing
KR100591344B1 (ko) * 1996-06-24 2007-11-12 소니 가부시끼 가이샤 반도체장치의제조방법
US5846871A (en) * 1997-08-26 1998-12-08 Lucent Technologies Inc. Integrated circuit fabrication
KR19990068006A (ko) * 1998-01-20 1999-08-25 루센트 테크놀러지스 인크 금속 산화물 반도체내에 사용되는 적층 스택 및 그 제조 방법과, 상보형 금속 산화물 반도체 소자

Also Published As

Publication number Publication date
JPH0346980B2 (enrdf_load_stackoverflow) 1991-07-17

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Legal Events

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LAPS Cancellation because of no payment of annual fees