JPS628940B2 - - Google Patents

Info

Publication number
JPS628940B2
JPS628940B2 JP329780A JP329780A JPS628940B2 JP S628940 B2 JPS628940 B2 JP S628940B2 JP 329780 A JP329780 A JP 329780A JP 329780 A JP329780 A JP 329780A JP S628940 B2 JPS628940 B2 JP S628940B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
semiconductor
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP329780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56100442A (en
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP329780A priority Critical patent/JPS56100442A/ja
Publication of JPS56100442A publication Critical patent/JPS56100442A/ja
Publication of JPS628940B2 publication Critical patent/JPS628940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP329780A 1980-01-16 1980-01-16 Semiconductor ic device Granted JPS56100442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP329780A JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS56100442A JPS56100442A (en) 1981-08-12
JPS628940B2 true JPS628940B2 (ko) 1987-02-25

Family

ID=11553433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP329780A Granted JPS56100442A (en) 1980-01-16 1980-01-16 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS56100442A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置

Also Published As

Publication number Publication date
JPS56100442A (en) 1981-08-12

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