JPS6281029A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6281029A
JPS6281029A JP22020785A JP22020785A JPS6281029A JP S6281029 A JPS6281029 A JP S6281029A JP 22020785 A JP22020785 A JP 22020785A JP 22020785 A JP22020785 A JP 22020785A JP S6281029 A JPS6281029 A JP S6281029A
Authority
JP
Japan
Prior art keywords
semiconductor device
polyimide
film
etching
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22020785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523493B2 (enrdf_load_stackoverflow
Inventor
Osamu Takahata
高畠 修
Shingo Ikeda
池田 慎悟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22020785A priority Critical patent/JPS6281029A/ja
Publication of JPS6281029A publication Critical patent/JPS6281029A/ja
Publication of JPH0523493B2 publication Critical patent/JPH0523493B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP22020785A 1985-10-04 1985-10-04 半導体装置の製造方法 Granted JPS6281029A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22020785A JPS6281029A (ja) 1985-10-04 1985-10-04 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22020785A JPS6281029A (ja) 1985-10-04 1985-10-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6281029A true JPS6281029A (ja) 1987-04-14
JPH0523493B2 JPH0523493B2 (enrdf_load_stackoverflow) 1993-04-02

Family

ID=16747562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22020785A Granted JPS6281029A (ja) 1985-10-04 1985-10-04 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6281029A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125079A (ja) * 1974-08-26 1976-03-01 Fujitsu Ltd Kotainetsuseijushimakuno shorihoho
JPS59182531A (ja) * 1983-04-01 1984-10-17 Hitachi Micro Comput Eng Ltd 半導体装置における絶縁膜加工法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125079A (ja) * 1974-08-26 1976-03-01 Fujitsu Ltd Kotainetsuseijushimakuno shorihoho
JPS59182531A (ja) * 1983-04-01 1984-10-17 Hitachi Micro Comput Eng Ltd 半導体装置における絶縁膜加工法

Also Published As

Publication number Publication date
JPH0523493B2 (enrdf_load_stackoverflow) 1993-04-02

Similar Documents

Publication Publication Date Title
JPS63170925A (ja) 基板上に配線を形成する方法およびリフトオフ膜
KR102013283B1 (ko) 열팽창 계수를 이용한 박막전극 분리 방법
JPS6281029A (ja) 半導体装置の製造方法
JP2010040693A (ja) パターン形成方法
JPH02168619A (ja) シリコーンゴム膜のパターン形成方法
JP2001053041A (ja) 半導体ウェハ裏面加工時の表面保護方法および半導体ウェハの保持方法
US4352839A (en) Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
JP2580681B2 (ja) 半導体装置の製造方法
JPH02138468A (ja) パターン形成法
JPS6155626A (ja) 液晶表示素子
JPH03108798A (ja) 多層配線基板およびその製造方法
JPH03245528A (ja) パターン形成方法
JP2003014781A (ja) プローブ基板及びその製造方法
US5989442A (en) Wet etching
JPS61194837A (ja) 構造化された表面を電気絶縁し平らにする方法
JPS62199781A (ja) レジスト膜の塗布方法
JPH0740497A (ja) 膜構造
JPS59152629A (ja) パタン形成方法
JPS6386544A (ja) 半導体装置の製造方法
JP2003324104A5 (enrdf_load_stackoverflow)
JPS60124846A (ja) 半導体装置の製造方法
JPS6188542A (ja) 半導体素子の多層配線形成方法
JPS60113992A (ja) 電子回路基板の製造方法
JPS58162041A (ja) 薄膜形成方法
JPS63265447A (ja) 半導体装置の多層配線の製造方法