JPS628025B2 - - Google Patents
Info
- Publication number
- JPS628025B2 JPS628025B2 JP17529380A JP17529380A JPS628025B2 JP S628025 B2 JPS628025 B2 JP S628025B2 JP 17529380 A JP17529380 A JP 17529380A JP 17529380 A JP17529380 A JP 17529380A JP S628025 B2 JPS628025 B2 JP S628025B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- layer
- silicon
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Element Separation (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17529380A JPS5799754A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
| DE19813129558 DE3129558A1 (de) | 1980-07-28 | 1981-07-27 | Verfahren zur herstellung einer integrierten halbleiterschaltung |
| US06/507,557 US4507849A (en) | 1980-07-28 | 1983-06-24 | Method of making isolation grooves by over-filling with polycrystalline silicon having a difference in impurity concentration inside the grooves followed by etching off the overfill based upon this difference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17529380A JPS5799754A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5799754A JPS5799754A (en) | 1982-06-21 |
| JPS628025B2 true JPS628025B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Family
ID=15993575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17529380A Granted JPS5799754A (en) | 1980-07-28 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799754A (enrdf_load_stackoverflow) |
-
1980
- 1980-12-12 JP JP17529380A patent/JPS5799754A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5799754A (en) | 1982-06-21 |