JPS5799754A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5799754A JPS5799754A JP17529380A JP17529380A JPS5799754A JP S5799754 A JPS5799754 A JP S5799754A JP 17529380 A JP17529380 A JP 17529380A JP 17529380 A JP17529380 A JP 17529380A JP S5799754 A JPS5799754 A JP S5799754A
- Authority
- JP
- Japan
- Prior art keywords
- shaped
- layer
- sio2
- poly
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Weting (AREA)
Abstract
PURPOSE:To separate an element by a method wherein a Si substrate, an uppmost layer thereof has a deposit layer of an n<+> layer, is separated by a V- shaped groove, the groove is buried completely with poly Si, n<+> diffusion is executed from the inside and the outside, and the n<+> layer is left in the V- shaped groove through selective etching. CONSTITUTION:SiO2 12, Si3N4 13 and PSG14 are stacked on a (911) surface of the Si substrate 11. The films 14-12 are opened to form the V-shaped grooves 15a, 15b and an island 15c. SiO2 16 is shaped at a high temperature under high pressure, and the grooves are buired with the poly Si. P is thermally diffused from the surface and the film 14, and n<+> layers 18, 19 are stacked. The layers 18, 19 are removed preferentially through a proper etching method, and poly Si 17a, 17b are left only in the grooves. The PSG14 is removed, SiO2 21 is shaped onto the layers 17a, 17b, the films 13, 12 are also removed, a pn junction is formed in the island 15c, and a desired device is shaped. According to this constitution, a flat minute element separation layer is obtained through a simple process.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17529380A JPS5799754A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
DE19813129558 DE3129558A1 (en) | 1980-07-28 | 1981-07-27 | METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT |
US06/507,557 US4507849A (en) | 1980-07-28 | 1983-06-24 | Method of making isolation grooves by over-filling with polycrystalline silicon having a difference in impurity concentration inside the grooves followed by etching off the overfill based upon this difference |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17529380A JPS5799754A (en) | 1980-12-12 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5799754A true JPS5799754A (en) | 1982-06-21 |
JPS628025B2 JPS628025B2 (en) | 1987-02-20 |
Family
ID=15993575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17529380A Granted JPS5799754A (en) | 1980-07-28 | 1980-12-12 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799754A (en) |
-
1980
- 1980-12-12 JP JP17529380A patent/JPS5799754A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS628025B2 (en) | 1987-02-20 |
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