JPS628012B2 - - Google Patents

Info

Publication number
JPS628012B2
JPS628012B2 JP56008817A JP881781A JPS628012B2 JP S628012 B2 JPS628012 B2 JP S628012B2 JP 56008817 A JP56008817 A JP 56008817A JP 881781 A JP881781 A JP 881781A JP S628012 B2 JPS628012 B2 JP S628012B2
Authority
JP
Japan
Prior art keywords
dielectric layer
layer
semiconductor
thin
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56008817A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57122534A (en
Inventor
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56008817A priority Critical patent/JPS57122534A/ja
Publication of JPS57122534A publication Critical patent/JPS57122534A/ja
Publication of JPS628012B2 publication Critical patent/JPS628012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP56008817A 1981-01-22 1981-01-22 Manufacture of semiconductor device Granted JPS57122534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56008817A JPS57122534A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56008817A JPS57122534A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57122534A JPS57122534A (en) 1982-07-30
JPS628012B2 true JPS628012B2 (en:Method) 1987-02-20

Family

ID=11703358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56008817A Granted JPS57122534A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57122534A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893224A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548926A (en) * 1978-10-02 1980-04-08 Hitachi Ltd Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS57122534A (en) 1982-07-30

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