JPS6274078A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS6274078A
JPS6274078A JP21548785A JP21548785A JPS6274078A JP S6274078 A JPS6274078 A JP S6274078A JP 21548785 A JP21548785 A JP 21548785A JP 21548785 A JP21548785 A JP 21548785A JP S6274078 A JPS6274078 A JP S6274078A
Authority
JP
Japan
Prior art keywords
gas
reaction
flow
wafer
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21548785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644590B2 (enrdf_load_stackoverflow
Inventor
Kazuo Maeda
和夫 前田
Toku Tokumasu
徳 徳増
Toshihiko Fukuyama
福山 敏彦
Fumiya Matsui
松井 文哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP21548785A priority Critical patent/JPS6274078A/ja
Publication of JPS6274078A publication Critical patent/JPS6274078A/ja
Publication of JPS644590B2 publication Critical patent/JPS644590B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP21548785A 1985-09-27 1985-09-27 気相成長装置 Granted JPS6274078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21548785A JPS6274078A (ja) 1985-09-27 1985-09-27 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21548785A JPS6274078A (ja) 1985-09-27 1985-09-27 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6274078A true JPS6274078A (ja) 1987-04-04
JPS644590B2 JPS644590B2 (enrdf_load_stackoverflow) 1989-01-26

Family

ID=16673196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21548785A Granted JPS6274078A (ja) 1985-09-27 1985-09-27 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6274078A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177239A (ja) * 2009-01-27 2010-08-12 Tatsumo Kk 半導体ウェハ処理装置
CN104178748A (zh) * 2013-05-21 2014-12-03 东京毅力科创株式会社 气体供给头、气体供给机构和基板处理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187033A (en) * 1981-05-12 1982-11-17 Seiko Epson Corp Vapor phase chemical growth device
JPS58119336A (ja) * 1982-01-08 1983-07-15 Ushio Inc 光反応蒸着装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187033A (en) * 1981-05-12 1982-11-17 Seiko Epson Corp Vapor phase chemical growth device
JPS58119336A (ja) * 1982-01-08 1983-07-15 Ushio Inc 光反応蒸着装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177239A (ja) * 2009-01-27 2010-08-12 Tatsumo Kk 半導体ウェハ処理装置
CN104178748A (zh) * 2013-05-21 2014-12-03 东京毅力科创株式会社 气体供给头、气体供给机构和基板处理装置

Also Published As

Publication number Publication date
JPS644590B2 (enrdf_load_stackoverflow) 1989-01-26

Similar Documents

Publication Publication Date Title
US4731255A (en) Gas-phase growth process and an apparatus for the same
JP7105187B2 (ja) レーザ処理装置およびレーザ処理方法
US10978324B2 (en) Upper cone for epitaxy chamber
JPH09246192A (ja) 薄膜気相成長装置
JPS6274078A (ja) 気相成長装置
JP2010042940A (ja) ガラス母材の製造装置及び製造方法
JPS6179771A (ja) 気相成長装置
JPS6328868A (ja) Cvd法
JPH04297030A (ja) 化学気相成長装置
JPS6184376A (ja) 気相成長装置
JPS6280271A (ja) 気相成長方法
JPS6274079A (ja) 気相成長装置
JPS6280272A (ja) 気相成長方法
JPH02252239A (ja) 化学気相成長装置
JPS59194427A (ja) 光cvd装置
JPH01101623A (ja) Cvd結晶成長装置
JPS58185499A (ja) 薄膜気相成長装置
JPH02109323A (ja) バレル型気相成長装置
JPH01123076A (ja) 薄膜形成方法
JPH0491426A (ja) 気相成長方法
JPS60111416A (ja) 気相反応容器
JPH0638402B2 (ja) 気相反応容器
JPS61121324A (ja) 気相成長装置
JPS62111418A (ja) 気相成長装置
JPS61186476A (ja) 光化学反応装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term