JPS6272127A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS6272127A
JPS6272127A JP60213129A JP21312985A JPS6272127A JP S6272127 A JPS6272127 A JP S6272127A JP 60213129 A JP60213129 A JP 60213129A JP 21312985 A JP21312985 A JP 21312985A JP S6272127 A JPS6272127 A JP S6272127A
Authority
JP
Japan
Prior art keywords
resist film
pattern
oxygen
film
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60213129A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0239086B2 (Direct
Inventor
Kazutoshi Oota
和俊 太田
Eiichi Hoshino
栄一 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60213129A priority Critical patent/JPS6272127A/ja
Publication of JPS6272127A publication Critical patent/JPS6272127A/ja
Publication of JPH0239086B2 publication Critical patent/JPH0239086B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP60213129A 1985-09-25 1985-09-25 パタ−ン形成方法 Granted JPS6272127A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60213129A JPS6272127A (ja) 1985-09-25 1985-09-25 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60213129A JPS6272127A (ja) 1985-09-25 1985-09-25 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6272127A true JPS6272127A (ja) 1987-04-02
JPH0239086B2 JPH0239086B2 (Direct) 1990-09-04

Family

ID=16634057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60213129A Granted JPS6272127A (ja) 1985-09-25 1985-09-25 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6272127A (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342825A (ja) * 1989-07-11 1991-02-25 Tokyo Electron Ltd アッシング方法
JPH03154330A (ja) * 1989-11-13 1991-07-02 Matsushita Electron Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218175A (en) * 1975-08-01 1977-02-10 Hitachi Ltd Circuit pattern formation method and its device
JPS57162330A (en) * 1981-03-31 1982-10-06 Kazuyuki Sugita Dry formation of pattern or dry removal of resist pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218175A (en) * 1975-08-01 1977-02-10 Hitachi Ltd Circuit pattern formation method and its device
JPS57162330A (en) * 1981-03-31 1982-10-06 Kazuyuki Sugita Dry formation of pattern or dry removal of resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342825A (ja) * 1989-07-11 1991-02-25 Tokyo Electron Ltd アッシング方法
JPH03154330A (ja) * 1989-11-13 1991-07-02 Matsushita Electron Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0239086B2 (Direct) 1990-09-04

Similar Documents

Publication Publication Date Title
US7718539B2 (en) Method for photomask fabrication utilizing a carbon hard mask
US5948570A (en) Process for dry lithographic etching
US5429730A (en) Method of repairing defect of structure
CN100510958C (zh) 图形形成方法
US5266424A (en) Method of forming pattern and method of manufacturing photomask using such method
US20060154151A1 (en) Method for quartz photomask plasma etching
US4489146A (en) Reverse process for making chromium masks using silicon dioxide dry etch mask
JPS6272127A (ja) パタ−ン形成方法
JP2005123651A (ja) レジスト膜の処理装置、およびレジストパターン形成方法
CN101373322A (zh) 空白掩模和使用该空白掩模制造光掩模的方法
JPH02187025A (ja) エッチング方法及びｘ線リソグラフィ用マスクの製造方法
US5260235A (en) Method of making laser generated I. C. pattern for masking
JPH09148306A (ja) ウエハの微細加工法およびそれに用いる装置
JP2594926B2 (ja) パタン形成法
JPS6043824A (ja) 半導体装置の製造方法
US4954424A (en) Pattern fabrication by radiation-induced graft copolymerization
JPH05234957A (ja) 半導体装置の製造方法
JP7151774B2 (ja) 位相シフトマスクブランクス、位相シフトマスク、露光方法、デバイスの製造方法、位相シフトマスクブランクスの製造方法、位相シフトマスクの製造方法、露光方法、及び、デバイスの製造方法
JPH0594022A (ja) 多層レジスト構造及びその製造方法
JPS58196022A (ja) 半導体装置の製造方法
JPS63304250A (ja) 微細レジストパタ−ンの形成方法
JPS59121841A (ja) パタ−ン形成方法
JPH07181666A (ja) 位相シフトマスク
JP3035535B1 (ja) パタ―ン形成方法及びパタ―ン形成装置
JPH01157531A (ja) 半導体装置の製造方法