JPS6271094A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPS6271094A JPS6271094A JP60211539A JP21153985A JPS6271094A JP S6271094 A JPS6271094 A JP S6271094A JP 60211539 A JP60211539 A JP 60211539A JP 21153985 A JP21153985 A JP 21153985A JP S6271094 A JPS6271094 A JP S6271094A
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- control signal
- bit
- sense amplifier
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 230000015654 memory Effects 0.000 claims description 14
- 230000009467 reduction Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 244000201986 Cassia tora Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- NCAIGTHBQTXTLR-UHFFFAOYSA-N phentermine hydrochloride Chemical compound [Cl-].CC(C)([NH3+])CC1=CC=CC=C1 NCAIGTHBQTXTLR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60211539A JPS6271094A (ja) | 1985-09-24 | 1985-09-24 | 半導体メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60211539A JPS6271094A (ja) | 1985-09-24 | 1985-09-24 | 半導体メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6271094A true JPS6271094A (ja) | 1987-04-01 |
| JPH043595B2 JPH043595B2 (enrdf_load_stackoverflow) | 1992-01-23 |
Family
ID=16607522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60211539A Granted JPS6271094A (ja) | 1985-09-24 | 1985-09-24 | 半導体メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6271094A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291884A (ja) * | 1988-09-28 | 1990-03-30 | Toshiba Corp | 半導体記憶装置 |
| JPH02294990A (ja) * | 1989-04-20 | 1990-12-05 | Internatl Business Mach Corp <Ibm> | メモリ装置 |
| JPH04109492A (ja) * | 1990-08-29 | 1992-04-10 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
| JPH05101660A (ja) * | 1991-10-07 | 1993-04-23 | Nec Corp | ダイナミツク型半導体記憶装置 |
-
1985
- 1985-09-24 JP JP60211539A patent/JPS6271094A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291884A (ja) * | 1988-09-28 | 1990-03-30 | Toshiba Corp | 半導体記憶装置 |
| JPH02294990A (ja) * | 1989-04-20 | 1990-12-05 | Internatl Business Mach Corp <Ibm> | メモリ装置 |
| JPH04109492A (ja) * | 1990-08-29 | 1992-04-10 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
| JPH05101660A (ja) * | 1991-10-07 | 1993-04-23 | Nec Corp | ダイナミツク型半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH043595B2 (enrdf_load_stackoverflow) | 1992-01-23 |
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