JPS626682Y2 - - Google Patents
Info
- Publication number
- JPS626682Y2 JPS626682Y2 JP9557880U JP9557880U JPS626682Y2 JP S626682 Y2 JPS626682 Y2 JP S626682Y2 JP 9557880 U JP9557880 U JP 9557880U JP 9557880 U JP9557880 U JP 9557880U JP S626682 Y2 JPS626682 Y2 JP S626682Y2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- inner tube
- reaction
- gas
- circumferential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 14
- 239000005360 phosphosilicate glass Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013064 chemical raw material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9557880U JPS626682Y2 (OSRAM) | 1980-07-09 | 1980-07-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9557880U JPS626682Y2 (OSRAM) | 1980-07-09 | 1980-07-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5720142U JPS5720142U (OSRAM) | 1982-02-02 |
| JPS626682Y2 true JPS626682Y2 (OSRAM) | 1987-02-16 |
Family
ID=29457455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9557880U Expired JPS626682Y2 (OSRAM) | 1980-07-09 | 1980-07-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS626682Y2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5883141U (ja) * | 1981-12-02 | 1983-06-06 | 株式会社日立製作所 | 半導体拡散装置 |
-
1980
- 1980-07-09 JP JP9557880U patent/JPS626682Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5720142U (OSRAM) | 1982-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3184000B2 (ja) | 薄膜の形成方法およびその装置 | |
| JP2000150513A (ja) | 窒化ケイ素薄膜の蒸着 | |
| JPH06275608A (ja) | 成膜方法 | |
| JPS62263629A (ja) | 気相成長装置 | |
| JPH021116A (ja) | 熱処理装置 | |
| JPS6033352A (ja) | 減圧ｃｖｄ装置 | |
| JPS626682Y2 (OSRAM) | ||
| JPS6122027B2 (OSRAM) | ||
| JPS63316425A (ja) | 半導体装置の製造装置 | |
| JPH0758030A (ja) | 半導体製造装置 | |
| JP2001156063A (ja) | 半導体装置の製造方法および半導体製造装置 | |
| JPH0682626B2 (ja) | 気相成長装置 | |
| JPH0658880B2 (ja) | 気相エピタキシヤル成長装置 | |
| JP3222723B2 (ja) | 半導体装置の製造方法 | |
| JPH01157519A (ja) | 気相成長装置 | |
| JPS5921863Y2 (ja) | 気相成長用反応管 | |
| JPS6343315A (ja) | 減圧ｃｖｄ装置 | |
| JPH05206106A (ja) | 減圧気相成長装置 | |
| JP3057716B2 (ja) | 薄膜形成方法 | |
| JPS607378B2 (ja) | Ｃｖｄ装置 | |
| JPH0713946B2 (ja) | Ｃｖｄ装置 | |
| JPS61114519A (ja) | 気相成長装置 | |
| JPH0512280Y2 (OSRAM) | ||
| JP3231312B2 (ja) | 気相成長装置 | |
| JPS5493357A (en) | Growing method of polycrystal silicon |